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70P249L65BYGI8

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
6.42
IDT70P269/259/249L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range
4 OCTOBER 16, 2008
Inputs Outputs
Mode
CS WE OE UB LB
I/O
0 -
I/O
15
HXXXX High-ZDeselected/Power Down
X X H X X High-Z Output Disable
X X X H H High-Z Upper and Lower Bytes Deselected
LHLLLDATA
OUT
(I/O
0
- I/O
15
) Read Upper and Lower Bytes
LHLHL
DATA
OUT
(I/O
0
- I/O
7
)
High-Z (I/O
8
- I/O
15
) Read Lower Byte Only
LHLLH
High-Z (I/O
0
- I/O
7
)
DATA
OUT
(I/O
8
- I/O
15
) Read Upper Byte Only
LLXLLDATA
IN
(I/O
0
- I/O
15
) Write Upper and Lower Bytes
LLXHL
DATA
IN
(I/O
0
- I/O
7
)
High-Z (I/O
8
- I/O
15
) Write Lower Byte Only
LLXLH
High-Z (I/O
0
- I/O
7
)
DATA
IN
(I/O
8
- I/O
15
) Write Upper Byte Only
7146 tbl 02b
Absolute Maximum Ratings
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed VDDIOX + 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited
to
< 20mA for the period over VTERM = VDDIOX + 0.5V.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Symbol Rating
Commercial
& Industrial Unit
V
TERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to V
DDIOX
+0.5 V
T
BIAS
(3)
Temperature Under Bias -55 to +125
o
C
T
STG
Storage Temperature -65 to +150
o
C
T
JN
Junction Temperature
+150
o
C
I
OUT
DC Output Current 20 mA
7146 tbl 03
Truth Table II: Standard SRAM Interface Read/Write Control
6.42
5
IDT70P269/259/249L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range
OCTOBER 16, 2008
Capacitance
(TA = +25°C, f = 1.0MHz)
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 9 pF
C
OUT
Output Capacitance V
OUT
= 3dV 10 pF
7146 tbl 05
Maximum Operating Temperature
and Supply Voltage
(1)
NOTE :
1. This is the parameter T
A. This is the "instant on" case temperature.
Grade Ambient
Temperature
GND V
DD
Industrial -40
O
C to +85
O
C0V
1.8V
+
100mV
2.5V
+
100mV
3.0V
+
300mV
7146 tbl 04
DC Electrical Characteristics Over the Operating and
Temperature and Supply Voltage Range
(VDD = 1.8V)
Symbol Parameter
P1 I/O
Voltage
P2 I/O
Voltage
70P269/259/249
Ind'l Only
Min. Typ. Max. Unit
V
OH
Output High Voltage (I
0
H
= -100 µA) 1.8V (any port) V
DDIO
- 0.2
___ ___
V
Output High Voltage (I
0
H
= -2 mA) 2.5V (any port) 2.0
___ ___
V
Output High Voltage (I
0
H
= -2 mA) 3.0V (any port) 2.1
___ ___
V
V
OL
Output Low Voltage (I
0
L
= 100 µA) 1.8V (any port)
___ ___
0.2 V
Output Low Voltage (I
0
L
= 2 mA) 2.5V (any port)
___ ___
0.4 V
Output Low Voltage (I
0
L
= 2 mA) 3.0V (any port)
___ ___
0.4 V
V
OL
ODR ODR Output Low Voltage (I
0
L
= 8 mA)
1.8V (any port)
___ ___
0.2 V
2.5V (any port)
___ ___
0.2 V
3.0V (any port)
___ ___
0.2 V
V
IH
Input High Voltage
1.8V (any port) 1.2
___
V
DDIO
+ 0.2 V
2.5V (any port) 1.7
___
V
DDIO
+ 0.3 V
3.0V (any port) 2.0
___
V
DDIO
+ 0.2 V
V
IL
Input Low Voltage
1.8V (any port) -0.2
___
0.4 V
2.5V (any port) -0.3
___
0.6 V
3.0V (any port) -0.2
___
0.7 V
I
OZ
Output Leakage Current
1.8V 1.8V -1
___
1
µA
2.5V 2.5V -1
___
1
3.0V 3.0V -1
___
1
I
CEX
ODR
ODR Output Leakage Current
V
OUT
= V
DDIO
1.8V 1.8V -1
___
1
µA
2.5V 2.5V -1
___
1
3.0V 3.0V -1
___
1
I
IX
Input Leakage Current
1.8V 1.8V -1
___
1
µA
2.5V 2.5V -1
___
1
3.0V 3.0V -1
___
1
7146 tbl 06
6.42
IDT70P269/259/249L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range
6 OCTOBER 16, 2008
Symbol Parameter
P1 I/O
Voltag e
P2 I/O
Voltage
70P269/259/249
Ind'l Only
Min. Typ. Max. Unit
V
OH
Output High Voltage (I
0
H
= -2 mA) 3.0V (any port) 2.1
___ ___
V
V
OL
Output Low Voltage (I
0
L
= 2 mA) 3.0V (any port)
___ ___
0.4 V
V
OL
ODR ODR Output Low Voltage (I
0
L
= 8 mA) 3.0V (any port)
___ ___
0.2 V
V
IH
Input High Voltage 3.0V (any port) 2.0
___
V
DDIO
+ 0.2 V
V
IL
Input Low Voltage 3.0V (any port) -0.2
___
0.7 V
I
OZ
Output Leakage Current 3.0V 3.0V -1
___
1
µA
I
CEX
ODR
ODR Output Leakage Current
V
OUT
= V
DDIO
3.0V 3.0V -1
___
1
µA
I
IX
Input Leakage Current 3.0V 3.0V -1
___
1
µA
7146 tbl 08
Symbol Parameter
P1 I/O
Voltag e
P2 I/O
Voltage
70P269/259/249
Ind'l Only
Min. Typ. Max. Unit
V
OH
Output High Voltage (I
0
H = -2 mA) 2.5V (any port) 2.0
___ ___
V
Output High Voltage (I
0
H = -2 mA) 3.0V (any port) 2.1
___ ___
V
V
OL
Output Low Voltage (I
0
L = 2 mA) 2.5V (any port)
___ ___
0.4 V
Output Low Voltage (I
0
L = 2 mA) 3.0V (any port)
___ ___
0.4 V
V
OL ODR ODR Output Low Voltage (I
0
L = 8 mA)
2.5V (any port)
___ ___
0.2 V
3.0V (any port)
___ ___
0.2 V
V
IH Input High Voltage
2.5V (any port) 1.7
___
VDDIO+ 0.3 V
3.0V (any port) 2.0
___
VDDIO + 0.2 V
V
IL Input Low Voltage
2.5V (any port) -0.3
___
0.6 V
3.0V (any port) -0.2
___
0.7 V
I
OZ Output Leakage Current
2.5V 2.5V -1
___
1
µA
3.0V 3.0V -1
___
1
I
CEX ODR
ODR Output Leakage Current
VOUT = VDDIO
2.5V 2.5V -1
___
1
µA
3.0V 3.0V -1
___
1
I
IX Input Leakage Current
2.5V 2.5V -1
___
1
µA
3.0V 3.0V -1
___
1
7146 tbl 07
DC Electrical Characteristics Over the Operating and
Temperature and Supply Voltage Range
(VDD = 2.5V)
DC Electrical Characteristics Over the Operating and
Temperature and Supply Voltage Range
(VDD = 3.0V)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

70P249L65BYGI8

Mfr. #:
Buy 70P249L65BYGI8
Manufacturer:
IDT
Description:
SRAM Low Power Dual-Port RAM IC
Lifecycle:
New from this manufacturer.
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