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NCP81022MNTXG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P41
NCP81022
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7
NCP81022 (4+1) ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −10°C < T
A
< 100°C; 4.75 V < VCC < 5.25 V; C
VCC
= 0.1 mF
Parameter UnitMAXTYPMINTest Conditions
ENABLE INPUT
Lower Threshold
V
LOWER
0.8 V
Enable delay time
Measure time from Enable
transitioning HI , VBOOT is not 0 V
15
ms
DRON
Output High Voltage
Sourcing 500 mA
3.0 − − V
Output Low Voltage
Sinking 500 mA
− − 0.1 V
Pull Up Resistances 2.0
kW
Rise/Fall Time
CL (PCB) = 20 pF,
DVo = 10% to 90%
160 ns
Internal Pull Down Resistance EN = Low 70
kW
IOUT OUTPUT /IOUTNB
Input Referred Offset Voltage
Ilimit to CSREF −3 +3 mV
Output current max
Ilim Sink current 80 mA
− − 800
mA
Current Gain (IOUT
CURRENT
) / (ILIMIT
CURRENT
),
R
LIM
= 20k, R
IOUT
= 5.0k,
DAC = 0.8 V, 1.25 V, 1.52 V
9.5 10 10.5
OSCILLATOR
Switching Frequency Range
240 − 1000 kHz
Switching Frequency Accuracy 200 kHz < Fsw < 1 MHz −10 − 10 %
4 Phase Operation 360 400 440 kHz
OUTPUT OVER VOLTAGE AND UNDER VOLTAGE PROTECTION (OVP & UVP)
Over Voltage Threshold During Soft−Start
VDD rising 270 325 380 mV
Over Voltage Delay VDD rising to PWMx low 50 ns
Under Voltage Threshold Below DAC−DROOP VDD falling 170 325 380 mV
Under−voltage Hysteresis VDD rising 25 mV
Under−voltage Delay 5
ms
SVI2 DAC
System Voltage Accuracy
1.2 V ≤ DAC < 1.55 V
0.8 V< DAC < 1.2 V
0.0 V DAC < 0.800 V
−2
−10
−2
2
10
2
LSB
mV
LSB
Feed−Forward Current
Measure on DROOP, DROOPNB
pin
59 66 71
mA
Droop Falling current
Measure on DROOP, DROOPNB
pin
23 29
mA
Droop Feed−Forward Pulse On−Time 0.16
ms
OVERCURRENT PROTECTION
ILIM Threshold Current (OCP shutdown after
50 ms delay)
Main Rail, RLIM = 20 kW
8 10 11.0
mA
ILIM Threshold Current (immediate OCP shut-
down)
Main Rail, RLIM = 20 kW
13 15 16.5
mA
ILIM Threshold Current (OCP shutdown after
50 ms delay)
Main Rail, (PSI0, PSI1)
RLIM = 20 kW
10
mA
ILIM Threshold Current (immediate OCP shut-
down)
Main Rail, (PSI0, PSI1)
RLIM = 20 kW
15
mA
NCP81022
www.onsemi.com
8
NCP81022 (4+1) ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −10°C < T
A
< 100°C; 4.75 V < VCC < 5.25 V; C
VCC
= 0.1 mF
Parameter UnitMAXTYPMINTest Conditions
OVERCURRENT PROTECTION
ILIM Threshold Current (OCP shutdown after
50 ms delay)
North Bridge Rail, RLIM = 20 kW
8 10 11.0
mA
ILIM Threshold Current (immediate OCP shut-
down)
North Bridge Rail, RLIM = 20 kW
13 15 16.5
mA
ILIM Threshold Current (OCP shutdown after
50 ms delay)
North Bridge Rail RLIM = 20 kW
10
mA
ILIM Threshold Current (immediate OCP shut-
down)
North Bridge Rail, RLIM = 20 kW
15
mA
MODULATORS (PWM COMPARATORS) FOR MAIN RAIL AND NORTH BRIDGE
Minimum Pulse Width
Fsw = 360 kHz 60 ns
0% Duty Cycle
COMP voltage when the PWM
outputs remain LO
1.3 − V
100% Duty Cycle
COMP voltage when the PWM
outputs remain HI VRMP = 12.0 V
− 2.5 − V
PWM Ramp Duty Cycle Matching COMP = 2 V, PWM Ton matching 1 %
PWM Phase Angle Error Between adjacent phases ±5 Deg
Ramp Feed−forward Voltage range 5 22 V
TRBST#
Output Low Voltage
I
Sink
= 500 mA
100 mV
OCP_L#
Output Low Voltage
0.3 V
Output Leakage Current High Impedance State −1.0 − 1.0
mA
ADC
Voltage Range
0 2 V
Total Unadjusted Error (TUE) −1.25 1.25 %
Differential Nonlinearity (DNL) 8−bit, No Missing codes 1 LSB
Power Supply Sensitivity ±1 %
Conversion Time 30
ms
Round Robin 90
ms
VDD_PWRGD, VDDNB_PWRGD OUTPUT
Output Low Saturation Voltage
I
VDD(NB)_PWRGD
= 4 mA, − − 0.3 V
Rise Time
External pull−up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 10% to 90%
− 100 ns
Fall Time
External pull−up of 1 kW to 3.3V,
C
TOT
= 45 pF, DVo = 90% to 10%
10 ns
Output Voltage at Power−up
VDD_PWRGD, VDDNB_PWRGD
pulled up to 5V via 2 kW
− − 1.2 V
Output Leakage Current When High
VDD_ PWRGD& VDDNB_PWRGD
= 5.0 V
−1.0 − 1.0
mA
VDD_PWRGD Delay (rising) DAC=TARGET to VDD_PWRGD 5
ms
VDD_PWRGD Delay (falling) From OCP or OVP − 5 −
ms
PWM, PWMNB OUTPUTS
Output High Voltage
Sourcing 500 mA
VCC –
0.2
− − V
NCP81022
www.onsemi.com
9
NCP81022 (4+1) ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −10°C < T
A
< 100°C; 4.75 V < VCC < 5.25 V; C
VCC
= 0.1 mF
Parameter UnitMAXTYPMINTest Conditions
PWM, PWMNB OUTPUTS
Output Mid Voltage
No Load 1.9 2.0 2.1 V
Output Low Voltage
Sinking 500 mA
− − 0.7 V
Rise and Fall Time
CL (PCB) = 50 pF,
DVo = GND to VCC
− 10 ns
Tri−State Output Leakage Gx = 2.0 V, x = 1−4, EN = Low −1.0 − 1.0
mA
2/3/4 PHASE DETECTION FOR MAIN BRIDGE
CSN2, CSN3, CSN4 Pin Threshold Voltage
4.7 V
Phase Detect Timer 2.3 ms
SVC, SVD, SVT, PWROK
VDDIO
Nominal Bus voltage 1.14 1.95 V
VIL Input Low Voltage 35 %
VDDIO Current VDDIO = 1.95 100
mA
VIH Input High Voltage 70 %
VHYS Hysteresis Voltage 10 %
VOH Output High Voltage
VDDIO
− 0.2
VDDIO V
VOL Output Low Voltage 0 0.2 V
Leakage Current −100 100
mA
Pad Capacitance 4.0 pF
clock to data delay (Tco) 4 8.3 ns
Setup time (Tsu) 5 10 ns
Hold time (Thold) 5 10 ns
SMBus INTERFACE, SDA, SCL
Logic High Input Voltage
V
IH(SDA,
SCL)
2.1 V
Logic Low Input Voltage V
IL(SDA,
SCL)
0.8 V
Hysteresis 500 mV
SDA Output low voltage, V
OL
I
SDA
= −6 mA 0.4 V
Input Current −1 1
mA
Input Capacitance 5.0 pF
Clock Frequency 400 kHz
SCL Falling Edge to SDA Valid Time 1.0
ms
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NCP81022MNTXG

Mfr. #:
Buy NCP81022MNTXG
Manufacturer:
ON Semiconductor
Description:
Gate Drivers AMD VR CONTROLLER
Lifecycle:
New from this manufacturer.
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