LTC4226
19
4226f
In Hot Swap applications where load currents can be 5A,
narrow PCB tracks exhibit more resistances than wide
tracks and operate at elevated temperatures. The mini-
mum trace width for 1oz copper foil is 0.02" per amp to
make sure the trace stays at a reasonable temperature.
Using 0.03" per amp or wider is recommended. Note that
1oz copper exhibits a sheet resistance of about 0.5mΩ/
square. The use of vias allow multi-copper planes to be
used to improve both electrical conduction and thermal
dissipation. Thicker top and bottom copper such as 3oz
or more can improve electrical conduction and reduce
PCB trace dissipation.
It is important to minimize noise pickup on PCB traces
for ON, FTMR, FAULT, CLS and GATE. If an R
G
resistor is
used, place the resistor as close to the MOSFET gate as
possible to limit the parasitic trace capacitance that leads
to MOSFET self-oscillation.
Bidirectional Current Limiting
Figure 16 shows an application with bidirectional current
limiting with a common sense resistor. Figure 12 shows
an asymmetric bidirectional current limiter for operating
voltage between 7V and 30V using two separate sense
applicaTions inForMaTion
resistors. Separate resistors allow different current limit
in each direction to be set. The transient suppressor at the
sense
pins allow the circuit breaker to trip when either the
input or output voltage exceeds the suppressor breakdown
voltage. When the OUT voltage exceeds the suppressor
breakdown, GATE2 shuts down after FTMR2 time-out and
this can prevent suppressor blow out. The timing capacitor
at FTMR2 can be selected to keep the suppressor within
safe operating area.
High Current Applications
Figure 13 and Figure 14 show 44A and 89A continuous
current applications for bus power distribution. The bus
connection inductance causes a supply dip at the sense
resistor when there is a load transient. The worst transient
is a short at the output or the sudden connection of an
uncharged load capacitor. Without capacitors C1 and C2
for channel 1, V
CC1
voltage can dip below the LTC4226
undervoltage lockout threshold resulting in a channel 1
UVLO reset. The low ESR electrolytic capacitor C1 and
ceramic capacitor C2 should be placed very close to the
sense resistor V
CC1
terminal and the ground plane to
minimize inductance.
Figure 12. 7V to 30V Asymmetric Bidirectional Current-Limiter
SMCJ33A
FTMR1
GND
220nF
50mΩ
FDMS86500DC
OR Si7164DP
220nF
FTMR2
ON1
SENSE2 V
CC2
GATE1
LTC4226-2
OUT1
FAULT1
CLS
FAULT2
ON2
FAULT1
CLS
FAULT2
30mΩ
V
CC1
SENSE1
FDMS86500DC
OR Si7164DP
GATE2
OUT2
OUT
7V TO 30V RANGE
1.48A/0.89A
V
IN
7V TO 30V RANGE
4226 F12
LTC4226
20
4226f
applicaTions inForMaTion
At the occurrence of severe load transient, the GATE1
voltage undershoots the voltage needed for current limit
regulation. The R
G1
and C
CG1
network between GATE1 and
OUT1 help restore GATE1 voltage quickly to the voltage
needed for current limit regulation. When a heatsink is a
used and gate interconnect has significant capacitance and
inductance, optional resistors R1 and R2 can be inserted
close to the MOSFET’s gate to prevent parasitic oscillation.
The product of R1 and MOSFET C
ISS
add delay to the cur-
rent limit response. For short PCB gate interconnection,
these optional resistors are not needed.
Tw o Hot Swap channels with identical sense resistors
and MOSFETs can have their outputs connected together
to almost double the current output capability without
significant improvement in MOSFET’s SOA. OUTPUT1 in
Figure 14 can be connected to OUTPUT2 to give 178A.
FTMR1 and FTMR2 should be kept separate as capaci-
tors C
T1
and C
T2
individually monitor the sense voltages
across R
S1
and R
S2
respectively. In the event of a current
fault, one channel may time out earlier than the adjacent
channel due to mismatch. If FAULT1 and FAULT2 are kept
separate, the
current in the channel of the first fault is
diverted to the adjacent channel with a second fault time
out occurring later.
Now consider the case where FAULT1 and FAULT2 are tied
together during a current fault. First fault channel FAULT1
pulls low and this causes an input low at FAULT2 with
GATE2 pulling low immediately. FTMR2 does not time out
due to the common FAULT connection with GATE2 disabled
earlier than the case of separate FAULT connection. The
MOSFET Q1 where the first occurrence of current fault
occurs would not be stressed as much as Q2 since the
fully enhanced Q2 determines the parallel channels V
CC
and OUT voltage drop. Common ON pin connections are
preferred for parallel channel applications.
Figure 13. Dual Continuous 44A Typical Output
Z1
SM6S15AHE3/2D
FTMR1
GND
C
T1
10nF
12V
R
S1
1mΩ
Q1
IRF2804S-7PPBF
R
S2
1mΩ
Q2
IRF2804S-7PPBF
C
T2
10nF
FTMR2
ON1
V
CC1
SENSE1 GATE1
LTC4226-2
OUT1
V
CC2
SENSE2 GATE2 OUT2
FAULT1
CLS
FAULT2
ON2
ON1
FAULT1
FAULT2
ON2
OUTPUT1
12V, 44A
OUTPUT2
12V, 44A
4226 F13
R2
10k
R1
10k
C1
1000µF
25V
+
R
G1
10Ω
C2
22µF
×10
25V
X5R
C3
1000µF
25V
+
C4
22µF
×10
25V
X5R
C
G1
10nF
R
G2
10Ω
C
G2
10nF
LTC4226
21
4226f
applicaTions inForMaTion
Figure 14. Dual Continuous 89A Typical Output
Z1
SM8S15AHE3/2D
FTMR1
GND
C
T1
1nF
+12V
R
S1
0.5mΩ
Q1
IRF1324S-7PPBF
R
S2
0.5mΩ
Q2
IRF1324S-7PPBF
*OPTIONAL
CONNECTION OPTION TO SHARE MOSFET SOA
C
T2
1nF
FTMR2
ON1
V
CC1
SENSE1 GATE1
LTC4226-2
OUT1
V
CC2
SENSE2 GATE2 OUT2
FAULT1
CLS
FAULT2
ON2
ON1
FAULT1
FAULT2
ON2
OUTPUT1
12V, 89A
OUTPUT2
12V, 89A
4226 F14
R4
10k
R3
10k
C1
1000µF
×2
25V
+
R
G1
10Ω
C2
22µF
×20
25V
X5R
C3
1000µF
×2
25V
+
C4
22µF
×20
25V
X5R
C
G1
10nF
R
G2
10Ω
R2*
10Ω
R1*
10Ω
C
G2
10nF
One drawback of the separate FTMR scheme for parallel
channels is that one timer may ramp up in current limit
mode before the other channel, resulting in shorter circuit
breaker timer duration and/or a reduction in the combined
circuit breaker current threshold due to R
DS(ON)
mismatch.
These issues are solved by using two cross-coupled PNP
clamps connected between the FTMR pins as shown in Fig-
ure 15. The FAULT pins are shorted together and connected
to an external open drain pull-down which is controlled by
a gate synchronization signal. The PNPs prevent a current
limited channel’s FTMR from ramping up too fast while
the other channel is still in circuit breaker mode. If only
one of the channels is in current limit mode, the clamp
from the other channel will slow down the current limited
channel’s FTMR ramp rate as shown in Figure 15’s accom-
panying waveforms. This scheme assumes common V
CC
and ON pins, and both channels should be on the same
chip. Channel to channel matching is 6% for V
CB
, 6%
for V
LIMIT
, and GATE high skew delay timing for both ON
and V
CC
are 10%. The GATE pins must be synchronized
by asserting the F
AULT inputs low to mask out t
ON(UVL)
skew. Asserting the FAULT pins low for at least 100ms at
power-up will ensure that the MOSFETs turn on together.
C
T2
10nF
LTC4226
FAULT2
FAULT
FTMR2
DELAYED
C
T1
10nF
FAULT1FTMR1
Q3
2N3906
Q4
2N3906
4226 F15
1ms/DIV
FTMR
0.5V/DIV
FAULT
5V/DIV
I
OUT
5A/DIV
FTMR1
FAULT
FTMR2
TOTAL OUTPUT CURRENT
ONOFF
Figure 15. PNP Connected FTMR for 2 Parallel Channels

LTC4226IUD-2#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers 4.5V to 44V Dual Hot Swap Controller, Auto-Retry
Lifecycle:
New from this manufacturer.
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