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AX8052F151-2-TB05

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34
AX8052F151
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7
SPECIFICATIONS
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol Description Condition Min Max Units
VDD_IO Supply voltage −0.5 5.5 V
IDD Supply current 100 mA
P
tot
Total power consumption 800 mW
P
i
Absolute maximum input power at receiver input 15 dBm
I
I1
DC current into any pin except ANTP, ANTN −10 10 mA
I
I2
DC current into pins ANTP, ANTN −100 100 mA
I
O
Output Current 40 mA
V
ia
Input voltage ANTP, ANTN pins −0.5 5.5 V
Input voltage digital pins −0.5 5.5 V
V
es
Electrostatic handling HBM −2000 2000 V
T
amb
Operating temperature −40 85 °C
T
stg
Storage temperature −65 150 °C
T
j
Junction Temperature 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC Characteristics
Table 4. SUPPLIES
Symbol Description Condition Min Typ Max Units
T
AMB
Operational ambient temperature −40 27 85 °C
VDD_IO I/O and voltage regulator supply voltage
RX operation or TX operation up
to 4 dBm output power
2.2 3.0 3.6
V
TX operation up to 16 dBm
output power
2.4 3.0 3.6
Transceiver switched off 1.8 3.0 3.6
VDD
IO_R1
I/O voltage ramp for reset activation;
Note 1
Ramp starts at VDD_IO ≤ 0.1 V 0.1 V/ms
VDD
IO_R2
I/O voltage ramp for reset activation;
Note 1
Ramp starts at
0.1 V < VDD_IO < 0.7 V
3.3 V/ms
VREG Internally regulated analog supply voltage
Power−down mode
AX5051_PWRMODE = 0x00
1.7 V
All other power modes 2.1 2.5 2.8 V
I
DEEPSLEEP
Deep Sleep current 500 nA
I
SLEEP256PIN
Sleep current, 256 Bytes RAM retained Wakeup from dedicated pin 900 nA
I
SLEEP256
Sleep current, 256 Bytes RAM retained Wakeup Timer running at 640 Hz 1.3
mA
I
SLEEP4K
Sleep current, 4.25 kBytes RAM retained Wakeup Timer running at 640 Hz 1.9
mA
I
SLEEP8K
Sleep current, 8.25 kBytes RAM retained Wakeup Timer running at 640 Hz 2.6
mA
I
RX−HS
Current consumption RX; High sensitivity
mode: VCO_I = 001; REF_I = 011
Bit rate 10 kbit/s 19 mA
I
RX−LP
Current consumption RX; Low power
mode: VCO_I = 001; REF_I = 101
Bit rate 10 kbit/s 17 mA
1. If VDD_IO ramps cannot be guaranteed, an external reset circuit is recommended, see the AX8052 Application Note: Power On Reset.
2. The PA voltage is regulated to 2.5 V. For VDD_IO levels in the range of 2.2 V to 2.5 V the output power drops by typically 1 dBm.
AX8052F151
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8
Table 4. SUPPLIES
Symbol UnitsMaxTypMinConditionDescription
I
TX
Current consumption TX
VCO_I = 001; REF_I = 011; LOCURST= 1
Note 2
868 MHz, 10 dBm 22
mA
868 MHz, 0 dBm 13
868 MHz, 15 dBm 45
433 MHz, 10 dBm 22
433 MHz, 0 dBm 13
433 MHz, 15 dBm 45
TX
varvdd
Variation of output power over voltage VDD_IO > 2.5 V, Note 2 ±0.5 dB
TX
vartemp
Variation of output power over
temperature
VDD_IO > 2.5 V, Note 2 ±0.5 dB
I
MCU
Microcontroller running power
consumption
All peripherals disabled 150
mA/
MHz
I
VSUP
Voltage supervisor Run and standby mode 85
mA
I
XTALOSC
Crystal oscillator current
(RF reference oscillator)
16 MHz 160
mA
I
LFXTALOSC
Low frequency crystal oscillator current 32 kHz 700 nA
I
RCOSC
Internal oscillator current 20 MHz 210
mA
I
LPOSC
Internal Low Power Oscillator current
10 kHz 650 nA
640 Hz 210 nA
I
ADC
ADC current 311 kSample/s, DMA 5 MHz 1.1 mA
I
WOR
Typical wake−on−radio duty cycle current 1 s, 100 kbps 6
mA
1. If VDD_IO ramps cannot be guaranteed, an external reset circuit is recommended, see the AX8052 Application Note: Power On Reset.
2. The PA voltage is regulated to 2.5 V. For VDD_IO levels in the range of 2.2 V to 2.5 V the output power drops by typically 1 dBm.
Note on current consumption in TX mode
To achieve best output power the matching network has to
be optimized for the desired output power and frequency. As
a rule of thumb a good matching network produces about
50% efficiency with the AX8052F151 power amplifier
although over 90% are theoretically possible. A typical
matching network has between 1 dB and 2 dB loss (P
loss
).
The current consumption can be calculated as
I
TX
[mA] +
1
PA
efficiency
10
P
out
[dBm])P
loss
[dB]
10
B 2.5V ) I
offset
I
offset
is about 12 mA for the VCO at 400 − 470 MHz and
11 mA for 800 − 940 MHz. The following table shows
calculated current consumptions versus output power for
P
loss
= 1 dB, PA
efficiency
= 0.5 and I
offset
= 11 mA at 868 MHz.
Table 5.
Pout [dBm] I [mA]
0 13.0
1 13.2
2 13.6
3 14.0
4 14.5
5 15.1
6 16.0
7 17.0
8 18.3
9 20.0
10 22.0
11 24.6
12 27.96
13 32.1
14 37.3
15 43.8
The AX8052F151 power amplifier runs from the
regulated VDD supply and not directly from the battery.
This has the advantage that the current and output power do
not vary much over supply voltage and temperature from
2.55 V to 3.6 V supply voltage. Between 2.55 V and 2.2 V
a drop of about 1 dB in output power occurs.
AX8052F151
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9
Table 6. LOGIC
Symbol Description Condition Min Typ Max Units
Digital Inputs
V
T+
Schmitt trigger low to high threshold point
VDD_IO = 3.3 V
1.55 V
V
T−
Schmitt trigger high to low threshold point 1.25 V
V
IL
Input voltage, low 0.8 V
V
IH
Input voltage, high 2.0 V
V
IPA
Input voltage range, Port A −0.5 VDD_IO V
V
IPBC
Input voltage range, Ports B, C −0.5 5.5 V
I
L
Input leakage current −10 10
mA
R
PU
Programmable Pull−Up Resistance 65
kW
Digital Outputs
I
OH
P[ABC]x Output Current, high V
OH
= 2.4 V 8 mA
I
OL
P[ABC]x Output Current, low V
OL
= 0.4 V 8 mA
I
OH
SYSCLK Output Current, high V
OH
= 2.4 V 8 mA
I
OL
SYSCLK Output Current, low V
OL
= 0.4 V 8 mA
I
OZ
Tri−state output leakage current −10 10
mA
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34

AX8052F151-2-TB05

Mfr. #:
Buy AX8052F151-2-TB05
Manufacturer:
ON Semiconductor
Description:
RF System on a Chip - SoC RF-MICROCONTROLLER
Lifecycle:
New from this manufacturer.
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