EDB4064B3PB
Data Sheet E1831E30 (Ver. 3.0)
7
Package Drawing
216-ball FBGA
Solder ball: Lead free
11.20
11.20
Unit: mm
B
S
0.4
216−φ0.25 ± 0.05
φ0.06
M
SAB
0.08
S
0.4
ECA-TS2-0441-01
0.20
S
A
0.18 ± 0.03
12.00 ± 0.10
INDEX MARK
0.68 ± 0.12
INDEX MARK
0.15 S A
0.15 S B
12.00 ± 0.10
EDB4064B3PB
Data Sheet E1831E30 (Ver. 3.0)
8
Mode Register Specification
The following table shows the specifications of mode register values (MR5, 6, 7, 8) for the manufacturer ID and
the device descriptions such as DRAM type, density, I/O and die revision.
MR# MA <7:0> OP7 OP6 OP5 OP4 OP3 OP2 OP1 OP0
5 05h
00000011
Manufacturer ID : ELPIDA
6 06h
00000010
Die Revision : Revision C
7 07h
00000000
RFU : Default value
8 08h
00010100
I/O : ×32 Density of Die : 2Gbit Type : S4
Note: 1. The register values specify monolithic die information in a package.
Therefore, please refer to the block diagram for understanding whole memory configuration of the
product containing multiple dice in a package.
Data Sheet E1831E30 (Ver. 3.0)
9
EDB4064B3PB
1. Electrical Conditions
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
• Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper
operation, the DDR2 Mobile RAM Device must be powered down and then restarted through the
specialized initialization sequence before normal operation can continue.
1.1 Absolute Maximum Ratings
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
1.2 Recommended DC Operating Conditions
Table 1 Absolute Maximum Ratings
Parameter Symbol min. max. Unit Note
VDD1 supply voltage relative to VSS VDD1 -0.4 2.3 V 2
VDD2 supply voltage relative to VSS VDD2 -0.4 1.6 V 2
VDDQ supply voltage relative to VSSQ VDDQ -0.4 1.6 V 2, 3
Voltage on any ball relative to VSS VIN, VOUT -0.4 1.6 V
Storage Temperature TSTG -55 125 °C
Notes: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indi-
cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. See Power-Ramp section “Power-up, initialization and Power-Off” in the individual DDR2 Mobile RAM data sheet for
relationship between power supplies.
3. VREF 0.6 x VDDQ; however, VREF may be VDDQ provided that VREF 300mV.
4. Storage Temperature is the case surface temperature on the center/top side of the DDR2 Mobile RAM Device. For the
measurement conditions, please refer to JESD51-2 standard.
Table 2 Recommended DC Operating Conditions(TC = -30°C to +85°C)
Parameter Symbol min. typ. max. Unit
Core Power1 VDD1 1.70 1.80 1.95 V
Core Power2, Input Buffer Power VDD2 1.14 1.20 1.30 V
I/O Buffer Power VDDQ 1.14 1.20 1.30 V

EDB4064B3PB-8D-F-D

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 4G PARALLEL 216FBGA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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