Electrical ratings STGIPN3H60-E
6/22 DocID027271 Rev 1
2 Electrical ratings
2.1 Absolute maximum ratings
Table 3. Inverter part
Symbol Parameter Value Unit
V
CES
Each IGBT collector emitter voltage (V
IN
(1)
= 0)
1. Applied between
HIN
i
, LIN
i and
G
ND
for i = U, V, W
600 V
± I
C
(2)
2. Calculated according to the iterative formula:
Each IGBT continuous collector current
at T
C
= 25°C
3A
± I
CP
(3)
3. Pulse width limited by max junction temperature
Each IGBT pulsed collector current 18 A
P
TOT
Each IGBT total dissipation at T
C
= 25°C 8 W
Table 4. Control part
Symbol Parameter Min. Max. Unit
V
OUT
Output voltage applied between OUT
U
, OUT
V
,
OUT
W
- GND
V
boot
- 21 V
boot
+ 0.3 V
V
CC
Low voltage power supply - 0.3 21 V
V
CIN
Comparator input voltage - 0.3 V
CC
+0.3 V
V
op+
OPAMP non-inverting input - 0.3 V
CC
+0.3 V
V
op-
OPAMP inverting input - 0.3 V
CC
+0.3 V
V
boot
Bootstrap voltage - 0.3 620 V
V
IN
Logic input voltage applied between HIN, LIN
and GND
- 0.3 15 V
V
SD/OD
Open drain voltage - 0.3 15 V
ΔV
OUT/dT
Allowed output slew rate 50 V/ns
Table 5. Total system
Symbol Parameter Value Unit
V
ISO
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
1000 V
T
j
Power chips operating junction temperature -40 to 150 °C
T
C
Module case operation temperature -40 to 125 °C
I
C
T
C
()
T
jmax()
T
C
–
R
thj c–
V
CE sat()max()
T
jmax()
I
C
T
C
(),()×
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