Electrical characteristics STGIPN3H60-E
8/22 DocID027271 Rev 1
3 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Note: t
ON
and t
OFF
include the propagation delay time of the internal drive. t
C(ON)
and t
C(OFF)
are
the switching time of IGBT itself under the internally given gate driving condition.
Table 7. Inverter part
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CE(sat)
Collector-emitter
saturation voltage
V
CC
= V
boot
= 15 V, V
IN
(1)
= 0 - 5 V,
I
C
= 1 A
- 2.15 2.6
V
V
CC
= V
boot
= 15 V, V
IN
(1)
= 0 - 5 V,
I
C
= 1 A, T
J
= 125 °C
-1.65
I
CES
Collector-cut off current
(V
IN
(1)
= 0 “logic state”)
V
CE
= 550 V, V
CC
= V
Boot
= 15 V - 250 μA
V
F
Diode forward voltage V
IN
(1)
= 0 “logic state”, I
C
= 1 A - 1.7 V
Inductive load switching time and energy
t
on
Turn-on time
V
DD
= 300 V,
V
CC
= V
boot
= 15 V,
V
IN
(1)
= 0 - 5 V,
I
C
= 1 A
(see Figure 4)
-275
ns
t
c(on)
Crossover time (on) - 90
t
off
Turn-off time - 890
t
c(off)
Crossover time (off) - 125
t
rr
Reverse recovery time - 50
E
on
Turn-on switching losses - 18
μJ
E
off
Turn-off switching losses - 13
1. Applied between
HIN
i
, LIN
i and
G
ND
for i = U, V, W (LIN inputs are active-low).
