ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
Rev. F | Page 4 of 28
Parameter B Version B Chips
1
Unit Test Conditions/Comments
POWER SUPPLIES
AV
DD
2.7/5.5 2.7/5.5 V min/V max
DV
DD
AV
DD
AV
DD
V
P
AV
DD
/6.0 AV
DD
/6.0 V min/V max
AV
DD
≤ V
P
≤ 6.0 V. See Figure 25 and Figure 26.
I
DD
5
(AI
DD
+ DI
DD
)
ADF4110 5.5 4.5 mA max 4.5 mA typical.
ADF4111
5.5
4.5
4.5 mA typical.
ADF4112 7.5 6.5 mA max 6.5 mA typical.
ADF4113 11 8.5 mA max 8.5 mA typical.
I
P
0.5 0.5 mA max T
A
= 25°C.
Low Power Sleep Mode 1 1 µA typ
NOISE CHARACTERISTICS
ADF4113 Normalized Phase Noise Floor
6
215
−215
Phase Noise Performance
7
@ VCO output.
ADF4110: 540 MHz Output
8
91 91 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4111: 900 MHz Output
9
87
87
@ 1 kHz offset and 200 kHz PFD frequency.
ADF4112: 900 MHz Output
9
90 90 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4113: 900 MHz Output
9
91 91 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4111: 836 MHz Output
10
78 78 dBc/Hz typ @ 300 Hz offset and 30 kHz PFD frequency.
ADF4112: 1750 MHz Output
11
86 86 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4112: 1750 MHz Output
12
66
66
@ 200 Hz offset and 10 kHz PFD frequency.
ADF4112: 1960 MHz Output
13
84 84 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4113: 1960 MHz Output
13
85 85 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4113: 3100 MHz Output
14
86 86 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency.
Spurious Signals
ADF4110: 540 MHz Output
9
97/106 97/106 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4111: 900 MHz Output
9
98/110 98/110 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4112: 900 MHz Output
9
91/100 91/100 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4113: 900 MHz Output
9
100/110 100/110 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4111: 836 MHz Output
10
81/84
81/84
@ 30 kHz/60 kHz and 30 kHz PFD frequency.
ADF4112: 1750 MHz Output
11
88/90 88/90 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4112: 1750 MHz Output
12
65/73 65/73 dBc typ @ 10 kHz/20 kHz and 10 kHz PFD frequency.
ADF4112: 1960 MHz Output
13
80/84
80/84
@ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4113: 1960 MHz Output
13
80/84 80/84 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4113: 3100 MHz Output
14
80/82 82/82 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD frequency.
1
The B chip specifications are given as typical values.
2
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
3
AC coupling ensures AV
DD
/2 bias. See Figure 33 for a typical circuit.
4
Guaranteed by design.
5
T
A
= 25°C; AV
DD
= DV
DD
= 3 V; P = 16; SYNC = 0; DLY = 0; RF
IN
for ADF4110 = 540 MHz; RF
IN
for ADF4111, ADF4112, ADF4113 = 900 MHz.
6
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO, PN
TOT
, and subtracting 20logN (where N is the N divider
value) and 10logF
PFD
: PN
SYNTH
= PN
TOT
10logF
PFD
20logN.
7
The phase noise is measured with the EV-ADF411XSD1Z evaluation board and the HP8562E spectrum analyzer. The spectrum analyzer provides the REFIN for the
synthesizer (f
REFOUT
= 10 MHz @ 0 dBm). SYNC = 0; DLY = 0 (Table 7).
8
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 540 MHz; N = 2700; loop B/W = 20 kHz.
9
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 900 MHz; N = 4500; loop B/W = 20 kHz.
10
f
REFIN
= 10 MHz; f
PFD
= 30 kHz; offset frequency = 300 Hz; f
RF
= 836 MHz; N = 27867; loop B/W = 3 kHz.
11
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 1750 MHz; N = 8750; loop B/W = 20 kHz
12
f
REFIN
= 10 MHz; f
PFD
= 10 kHz; offset frequency = 200 Hz; f
RF
= 1750 MHz; N = 175000; loop B/W = 1 kHz.
13
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; offset frequency = 1 kHz; f
RF
= 1960 MHz; N = 9800; loop B/W = 20 kHz.
14
f
REFIN
= 10 MHz; f
PFD
= 1 MHz; offset frequency = 1 kHz; f
RF
= 3100 MHz; N = 3100; loop B/W = 20 kHz.
Data Sheet ADF4110/ADF4111/ADF4112/ADF4113
Rev. F | Page 5 of 28
TIMING CHARACTERISTICS
Guaranteed by design but not production tested. AV
DD
= DV
DD
= 3 V ± 10%, 5 V ± 10%; AV
DD
≤ V
P
≤ 6 V;
AGND = DGND = CPGND = 0 V; R
SET
= 4.7 kΩ; T
A
= T
MIN
to T
MAX
, unless otherwise noted.
Table 2.
Parameter Limit at T
MIN
to T
MAX
(B Version) Unit Test Conditions/Comments
t
1
10 ns min DATA to CLOCK setup time
t
2
10 ns min DATA to CLOCK hold time
t
3
25 ns min CLOCK high duration
t
4
25 ns min CLOCK low duration
t
5
10 ns min CLOCK to LE setup time
t
6
20 ns min LE pulse width
CLOC
K
DATA
LE
LE
DB23 (MSB) DB22 DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
1
t
2
t
3
t
4
t
5
t
6
03496-002
Figure 2. Timing Diagram
ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
Rev. F | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted
Table 3.
Parameter Rating
AV
DD
to GND
1
0.3 V to +7 V
AV
DD
to DV
DD
0.3 V to +0.3 V
V
P
to GND 0.3 V to +7 V
V
P
to AV
DD
0.3 V to +5.5 V
Digital I/O Voltage to GND 0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND 0.3 V to V
P
+ 0.3 V
REF
IN
, RF
IN
A, RF
IN
B to GND 0.3 V to V
DD
+ 0.3 V
RF
IN
A to RF
IN
B ±320 mV
Operating Temperature Range
Industrial (B Version) 40°C to +85°C
Storage Temperature Range 65°C to +150°C
Maximum Junction Temperature 150°C
TSSOP θ
JA
Thermal Impedance
150.4°C/W
LFCSP θ
JA
Thermal Impedance
(Paddle Soldered)
122°C/W
LFCSP θ
JA
Thermal Impedance
(Paddle Not Soldered)
216°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

ADF4110BRU-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Phase Locked Loops - PLL SGL Integer-N 550 MHz
Lifecycle:
New from this manufacturer.
Delivery:
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