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BFU550R

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 10 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
V
CE
=8V; T
amb
=25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
V
CE
=8V; T
amb
=25C.
If K >1 then G
p(max)
= maximum power gain. If K < 1 then
G
p(max)
= MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
Fig 13. Maximum power gain as a function of collector
current; typical values
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BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 11 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
I
C
=25mA; T
amb
=25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
I
C
=25mA; T
amb
=25C.
If K >1 then G
p(max)
= maximum power gain. If K < 1 then
G
p(max)
= MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
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BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 12 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
V
CE
= 8 V; 40 MHz f 3 GHz.
(1) I
C
= 15 mA
(2) I
C
= 25 mA
Fig 16. Input reflection coefficient (s
11
); typical values
V
CE
= 8 V; 40 MHz f 3 GHz.
(1) I
C
= 15 mA
(2) I
C
= 25 mA
Fig 17. Output reflection coefficient (s
22
); typical values
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P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

BFU550R

Mfr. #:
Buy BFU550R
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN wideband silicon RF transistor
Lifecycle:
New from this manufacturer.
Delivery:
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