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BFU550R

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 7 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
9.1 Graphs
T
amb
=25C.
(1) I
B
=25A
(2) I
B
=75A
(3) I
B
= 125 A
(4) I
B
= 175 A
(5) I
B
= 225 A
(6) I
B
= 275 A
(7) I
B
= 325 A
Fig 2. Collector current as a function of collector-emitter voltage; typical values
T
amb
=25C.
(1) V
CE
=3.0V
(2) V
CE
=8.0V
V
CE
=8V.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +125 C
Fig 3. DC current gain as function of collector
current; typical values
Fig 4. DC current gain as function of collector
current; typical values
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BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 8 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
T
amb
=25C.
(1) V
CE
=3.0V
(2) V
CE
=8.0V
T
amb
=25C.
(1) V
CE
=3.0V
(2) V
CE
=8.0V
Fig 5. Collector current as a function of base-emitter
voltage; typical values
Fig 6. Base current as a function of base-emitter
voltage; typical values
V
CE
=3V.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +125 C
I
C
= 0 mA; f = 1 MHz; T
amb
=25C.
Fig 7. Reverse base current as a function of
emitter-base voltage; typical values
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
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BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 9 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
T
amb
=25C.
(1) V
CE
=3.3V
(2) V
CE
=5.0V
(3) V
CE
=8.0V
(4) V
CE
= 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
I
C
=15mA; V
CE
=8V; T
amb
=25C. I
C
=25mA; V
CE
=8V; T
amb
=25C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
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P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

BFU550R

Mfr. #:
Buy BFU550R
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN wideband silicon RF transistor
Lifecycle:
New from this manufacturer.
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