BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 4 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
8. Thermal characteristics
[1] T
sp
is the temperature at the solder point of the collector lead.
T
sp
has the following relation to the ambient temperature T
amb
:
T
sp
=T
amb
+P R
th(sp-a)
With P being the power dissipation and R
th(sp-a)
being the thermal resistance between the solder point and
ambient. R
th(sp-a)
is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
9. Characteristics
Table 8. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point
[1]
140 K/W
Fig 1. Power derating curve
DDD
7
VS
&
3
WRWWRW
3
WRW
P:P:P:
Table 9. Characteristics
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown voltage I
C
= 100 nA; I
E
=0mA 24 - - V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 150 nA; I
B
=0mA 12 - - V
I
C
collector current -1550mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
=8V - <1 - nA
h
FE
DC current gain I
C
=15mA; V
CE
= 8 V 60 95 200
C
e
emitter capacitance V
EB
= 0.5 V; f = 1 MHz - 1.11 - pF
C
re
feedback capacitance V
CE
= 8 V; f = 1 MHz - 0.41 - pF
C
c
collector capacitance V
CB
= 8 V; f = 1 MHz - 0.72 - pF
f
T
transition frequency I
C
=25mA; V
CE
= 8 V; f = 900 MHz - 11 - GHz
