BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 13 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
V
CE
=8V; T
amb
=25C.
(1) f
1
= 433 MHz; f
2
= 434 MHz
(2) f
1
= 900 MHz; f
2
= 901 MHz
(3) f
1
= 1800 MHz; f
2
= 1801 MHz
V
CE
=8V; T
amb
=25C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 18. Output third-order intercept point as a function
of collector current; typical values
Fig 19. Output power at 1 dB gain compression as a
function of collector current; typical values
I
C
= 25 mA; T
amb
=25C.
(1) f
1
= 433 MHz; f
2
= 434 MHz
(2) f
1
= 900 MHz; f
2
= 901 MHz
(3) f
1
= 1800 MHz; f
2
= 1801 MHz
I
C
=25 mA; T
amb
=25C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 20. Output third-order intercept point as a function
of collector-emitter voltage; typical values
Fig 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage;
typical values
DDD
,
&
P$
,3,3
R
,3
R
G%PG%PG%P
DDD
,
&
P$
3
/G%/G%
3
/G%
G%PG%PG%P
DDD
9
&(
9
,3,3
R
,3
R
G%PG%PG%P
DDD
9
&(
9
3
/G%/G%
3
/G%
G%PG%PG%P
