BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 16 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
10.1 Application example: 433 ISM band LNA
433 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11431.
Remark: fine tuning of components maybe required depending on PCB parasitics.
Fig 25. Schematic 433 MHz ISM band LNA
Table 10. Application performance data at 433 MHz
I
CC
= 20 mA; V
CC
= 3.6 V
Symbol Parameter Conditions Min Typ Max Unit
s
21
2
insertion power gain - 21 - dB
NF noise figure - 1.3 - dB
IP3
o
output third-order
intercept point
f
1
= 433.1 MHz; f
2
= 433.2 MHz;
P
i
= 30 dBm per carrier
-19- dBm
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