BSC

BSC090N03LS G vs BSC0909NS vs BSC0909NSATMA1

 
PartNumberBSC090N03LS GBSC0909NSBSC0909NSATMA1
DescriptionMOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3MOSFET N-Ch 30V 44A TDSON-8 OptiMOSMOSFET N-CH 34V 44A 8TDSON
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V34 V-
Id Continuous Drain Current48 A44 A-
Rds On Drain Source Resistance7.5 mOhms7.7 mOhms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation32 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min28 S50 S, 25 S-
Fall Time2.4 ns--
Product TypeMOSFETMOSFET-
Rise Time2.6 ns--
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time3.1 ns--
Part # AliasesBSC090N03LSGATMA1 BSC9N3LSGXT SP000275115BSC0909NSATMA1 BSC99NSXT SP000832576-
Unit Weight-0.016014 oz-
  • Start with
  • BSC 999
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC0911NDATMA1 MOSFET N-Ch 25V 40A TISON-8
BSC090N03LS G MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
BSC090N03MS G MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC0923NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0921NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0921NDIATMA1 MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0911ND MOSFET N-Ch 25V 40A TISON-8
BSC0910NDI MOSFET TRANSITIONAL MOSFETS
BSC0910NDIATMA1 MOSFET LV POWER MOS
BSC090N03MSGATMA1 MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC0924NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC090N03LSGATMA1 MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
BSC0909NS MOSFET N-Ch 30V 44A TDSON-8 OptiMOS
BSC090N03MSGXT MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC0909NS Trans MOSFET N-CH 34V 12A 8-Pin TDSON EP
BSC0909NSATMA1 MOSFET N-CH 34V 44A 8TDSON
BSC090N03LS G Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G)
BSC090N03LSGATMA1 MOSFET N-CH 30V 48A TDSON-8
BSC090N03MS G Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC090N03MS G)
BSC090N03MSGATMA1 MOSFET N-CH 30V 48A TDSON-8
BSC090N03MSGXT MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC0910NDI Trans MOSFET N-CH 25V 11A/22A 8-Pin TISON T/R (Alt: BSC0910NDI)
BSC0911ND Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R (Alt: BSC0911ND)
BSC0921NDI Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R (Alt: BSC0921NDI)
BSC0923NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0923NDIATMA1 MOSFET 2N-CH 30V 17A/32A TISON8
BSC0924NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0911NDATMA1 MOSFET 2N-CH 25V 18A/30A TISON-8
BSC0910NDIATMA1 MOSFET LV POWER MOS
BSC0921NDIATMA1 RF Bipolar Transistors MOSFET N-Ch 30V,30V 40A,40A TISON-8
Infineon Technologies
Infineon Technologies
BSC0923NDIATMA1 MOSFET LV POWER MOS
BSC0924NDIATMA1 MOSFET LV POWER MOS
BSC0909NS 0909NS New and Original
BSC090N03MSG 48A 30V New and Original
BSC090N03MSGATMA1 , TDZ New and Original
BSC0911ND 0911ND New and Original
BSC091N03MSC G MOSFET N-Ch 30V 12A TDSON-8
BSC0923NDI , TDZ TR 24 , New and Original
BSC0924NDI , TDZ TR 5.1 New and Original
BSC0909NSATMA1-CUT TAPE New and Original
BSC090N03LSGATMA1-CUT TAPE New and Original
BSC090N03MSGATMA1-CUT TAPE New and Original
BSC090N03LS New and Original
BSC090N03MS Transistor: N-MOSFET, unipolar, 30V, 43A, 32W, PG-TDSON-8
BSC091N03MS New and Original
BSC091N03MSC New and Original
BSC090N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC090N03MSG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC091N03MSCG Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC091N03MSCGATMA1 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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