BSZ100N06LS3

BSZ100N06LS3 G vs BSZ100N06LS3GATMA1

 
PartNumberBSZ100N06LS3 GBSZ100N06LS3GATMA1
DescriptionMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTSDSON-8PG-TSDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current20 A20 A
Rds On Drain Source Resistance7.7 mOhms10 mOhms
Vgs th Gate Source Threshold Voltage1.2 V1.2 V
Vgs Gate Source Voltage20 V10 V
Qg Gate Charge45 nC34 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation50 W50 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.1 mm1.1 mm
Length3.3 mm3.3 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width3.3 mm3.3 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min20 S20 S
Fall Time8 ns8 ns
Product TypeMOSFETMOSFET
Rise Time58 ns58 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns19 ns
Typical Turn On Delay Time8 ns8 ns
Part # AliasesBSZ100N06LS3GATMA1 BSZ1N6LS3GXT SP000453672BSZ100N06LS3 BSZ1N6LS3GXT G SP000453672
Unit Weight0.003527 oz0.002681 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ100N06LS3 G MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ100N06LS3GATMA1 MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ100N06LS3 G BSZ100N06LS3 G
BSZ100N06LS3GATMA1 MOSFET N-CH 60V 20A TSDSON-8
BSZ100N06LS3 New and Original
BSZ100N06LS3G New and Original
BSZ100N06LS3GATMA New and Original
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