 |  | | |
| PartNumber | IPB020NE7N3 G | IPB020NE7N3GATMA1 | IPB021N06N3GATMA1 |
| Description | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | MOSFET N-CH 75V 120A TO263-3 | MOSFET N-CH 60V 120A TO263-3 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 98 S | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Part # Aliases | IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB024N10N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPB024N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB025N08N3 G | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | ||
| IPB020NE7N3 G | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | ||
| IPB026N06NATMA1 | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB026N06N | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB025N10N3 G | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
| IPB025N10N3GATMA1 | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
| IPB024N10N5ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB020NE7N3GATMA1 | MOSFET N-CH 75V 120A TO263-3 | ||
| IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB022N04LGATMA1 | MOSFET N-CH 40V 90A TO263-3 | ||
| IPB023N04NGATMA1 | MOSFET N-CH 40V 90A TO263-3 | ||
| IPB023N06N3GATMA1 | MOSFET N-CH 60V 140A TO263-7 | ||
| IPB025N08N3GATMA1 | MOSFET N-CH 80V 120A TO263-3 | ||
| IPB025N10N3GATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB025N10N3GE8187ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB026N06NATMA1 | Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB024N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | ||
Infineon Technologies |
IPB025N08N3GATMA1 | MOSFET MV POWER MOS | |
| IPB026N06N | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB020NE7N3 G | Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G) | ||
| IPB020NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB020NE7N3G(020NE7N) | New and Original | ||
| IPB021N04N | New and Original | ||
| IPB021N04NG | New and Original | ||
| IPB021N04NGATMA1 | New and Original | ||
| IPB021N06N3 | New and Original | ||
| IPB021N06N3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB022N04L | New and Original | ||
| IPB022N04LG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB022N04LG,022N04 | New and Original | ||
| IPB023N04N | New and Original | ||
| IPB023N04NG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB023N04NGS | New and Original | ||
| IPB023N06N3 | New and Original | ||
| IPB023N06N3G | 140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | ||
| IPB024N08N5 | N-CH 80V 120A 2,4mOhm TO263-3 | ||
| IPB024N10N5 | New and Original | ||
| IPB025N08N3 | New and Original | ||
| IPB025N08N3 G | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) | ||
| IPB025N08N3G | New and Original | ||
| IPB025N10N3 G | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
| IPB025N10N3G | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G) | ||
| IPB025N10N3G , 2SD1824 | New and Original | ||
| IPB025N10N3GE8197ATMA1 | - Bulk (Alt: IPB025N10N3GE8197ATMA1) | ||
| IPB021N06N3 G | IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB023N06N3 G | IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6 | ||
| IPB023N04N G | IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2 | ||
| IPB025N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 |