 | | | |
| PartNumber | IPB017N06N3 G | IPB017N06N3GATMA1 | IPB017N06N3GXT |
| Description | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 180 A | 180 A | 180 A |
| Rds On Drain Source Resistance | 1.3 mOhms | 1.3 mOhms | 1.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 275 nC | 275 nC | 275 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 250 W | 250 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | OptiMOS 3 Power-Transistor |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 99 S | 99 S | 99 S |
| Fall Time | 24 ns | 24 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns | 80 ns | 80 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | 79 ns | 79 ns |
| Typical Turn On Delay Time | 41 ns | 41 ns | 41 ns |
| Part # Aliases | IPB017N06N3GATMA1 IPB17N6N3GXT SP000434404 | G IPB017N06N3 IPB17N6N3GXT SP000434404 | G IPB017N06N3 IPB017N06N3GATMA1 SP000434404 |
| Unit Weight | 0.056438 oz | 0.070548 oz | 0.056438 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB017N10N5LFATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPB017N10N5ATMA1 | MOSFET N-Ch 100V 180A D2PAK-2 | ||
| IPB017N08N5 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB017N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB017N06N3 G | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | ||
| IPB017N06N3GATMA1 | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | ||
| IPB017N06N3GXT | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | ||
| IPB017N08N5 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB017N06N3 G | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R | ||
| IPB017N06N3GATMA1 | MOSFET N-CH 60V 180A TO263-7 | ||
| IPB017N10N5LFATMA1 | MOSFET N-CH 100V D2PAK-7 | ||
| IPB017N10N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2 | ||
| IPB017N08N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB017N06N | New and Original | ||
| IPB017N06N 017N06N -7 | New and Original | ||
| IPB017N06N3G | MOSFET N-CH 60V 180A OPTIMOS3 TO263-7, EA |