PartNumber | IPB120N06S403ATMA2 | IPB120N06S403ATMA1 | IPB120N06S4H1ATMA1 |
Description | MOSFET N-Ch 60V 120A D2PAK-2 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | MOSFET N-CH 60V 120A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 120 A | 120 A | - |
Rds On Drain Source Resistance | 2.8 mOhms | 2.3 mOhms | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | IPB120N06 | XPB120N06 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPB120N06S4-03 IPB12N6S43XT SP001028770 | IPB120N06S4-03 IPB120N06S403XT SP000415558 | - |
Unit Weight | 0.068654 oz | 0.139332 oz | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 160 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 167 W | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 10 ns | - |
Typical Turn Off Delay Time | - | 80 ns | - |
Typical Turn On Delay Time | - | 40 ns | - |