 | | | |
| PartNumber | IPB160N04S4H1ATMA1 | IPB160N04S4LH1ATMA1 | IPB160N08S4-03 |
| Description | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | MOSFET N-CHANNEL 30/40V | MOSFET N-CHANNEL 75/80V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | 80 V |
| Id Continuous Drain Current | 160 A | - | 160 A |
| Rds On Drain Source Resistance | 1.4 mOhms | - | 2.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | 2 V |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Qg Gate Charge | 137 nC | - | 112 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 167 W | - | 208 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | xPB160N04 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 33 ns | - | 38 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | - | 11 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | - | 30 ns |
| Typical Turn On Delay Time | 28 ns | - | 18 ns |
| Part # Aliases | IPB160N04S4-H1 IPB16N4S4H1XT SP000711252 | IPB160N04S4L-H1 SP000979640 | IPB160N08S403ATMA1 SP000989092 |
| Unit Weight | 0.056438 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB180N04S400ATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | |
| IPB17N25S3-100 | MOSFET N-Ch 250V 17A D2PAK-2 | ||
| IPB160N04S4H1ATMA1 | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4-01 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4H0ATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N03S4LH0ATMA1 | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB160N04S4LH1ATMA1 | MOSFET N-CHANNEL 30/40V | ||
| IPB17N25S3100ATMA1 | MOSFET N-Ch 250V 17A D2PAK-2 | ||
| IPB160N08S4-03 | MOSFET N-CHANNEL 75/80V | ||
| IPB180N03S4L-H0 | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4-00 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N03S4L-01 | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4-H0 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB160N08S403ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB180N04S3-02 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T | ||
| IPB180N03S4L01ATMA1 | MOSFET N-CH 30V 180A TO263-7-3 | ||
| IPB17N25S3100ATMA1 | MOSFET N-CH TO263-3 | ||
| IPB180N04S400ATMA1 | MOSFET N-CH 40V 180A TO263-7-3 | ||
| IPB180N04S401ATMA1 | MOSFET N-CH 40V 180A TO263-7-3 | ||
| IPB16CN10N G | MOSFET N-CH 100V 53A TO263-3 | ||
| IPB160N04S4H1ATMA1 | MOSFET N-CH 40V 160A TO263-7 | ||
| IPB180N03S4LH0ATMA1 | MOSFET N-CH 30V 180A TO263-7-3 | ||
| IPB180N04S302ATMA1 | MOSFET N-CH 40V 180A TO263-7 | ||
| IPB160N08S403ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB160N04S4LH1ATMA1 | MOSFET N-CHANNEL 30/40V | ||
Infineon Technologies |
IPB180N04S401ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPB180N04S302ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPB17N25S3-100 | N-CH 250V 17A 85mOhm TO263-3 | ||
| IPB180N03S4LH0XT | Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N03S4LH0ATMA1) | ||
| IPB180N04S302XT | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N04S302ATMA1) | ||
| IPB160N08S4-03 | MOSFET N-CHANNEL 75/80V | ||
| IPB160N08S4-03ATMA1 | Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | ||
| IPB160N04S4L-H1 | New and Original | ||
| IPB16CN10N | New and Original | ||
| IPB16CN10NG | New and Original | ||
| IPB16CNE8N | New and Original | ||
| IPB16CNE8N G | New and Original | ||
| IPB16CNE8NG | New and Original | ||
| IPB16N04S3-H2 | New and Original | ||
| IPB180N03S4L-H0 (4N03LH | New and Original | ||
| IPB180N03S4L-H0 (4N03LH0 | New and Original | ||
| IPB180N04S4-00 | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N04S4-00 (4N0400) | New and Original | ||
| IPB180N04S4-01 | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N04S4-H0 | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N04S4-HO | New and Original | ||
| IPB180N03S4L-H0 | Darlington Transistors MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S3-02 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T | ||
| IPB160N04S402DXTMA1 | RF Bipolar Transistors MOSFET N-Ch 40V 160A D2PAK-6 | ||
| IPB180N03S4L-01 | RF Bipolar Transistors MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 |