PartNumber | IPB117N20NFD | IPB110P06LMATMA1 | IPB114N03L G |
Description | MOSFET N-Ch 200V 84A D2PAK-2 | MOSFET TRENCH 40<-<100V | MOSFET N-Ch 30V 30A D2PAK-2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | - 60 V | 30 V |
Id Continuous Drain Current | 84 A | - 100 A | 30 A |
Rds On Drain Source Resistance | 10.3 mOhms | 11 mOhms | 11.4 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 87 nC | - 281 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 300 W | 300 W | 38 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | - | 4.4 mm |
Length | 10 mm | - | 10 mm |
Series | OptiMOS Fast Diode | IPB06P001 | - |
Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
Width | 9.25 mm | - | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 70 S | 100 S | - |
Fall Time | 8 ns | 74 ns | 2.4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 33 ns | 3 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 24 ns | 277 ns | 15 ns |
Typical Turn On Delay Time | 13 ns | 22 ns | 3.8 ns |
Part # Aliases | IPB117N20NFDATMA1 SP001107232 | IPB110P06LM SP004987252 | IPB114N03LGXT |
Unit Weight | 0.068654 oz | - | 0.139332 oz |