PartNumber | IPB180N04S4LH0ATMA1 | IPB180N04S4H0ATMA1 | IPB180N04S4L01ATMA1 |
Description | MOSFET N-CHANNEL 30/40V | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-CHANNEL 30/40V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPB180N04S4L-H0 SP000979636 | IPB180N04S4-H0 IPB18N4S4HXT SP000711248 | IPB180N04S4L-01 SP000979928 |
RoHS | - | Y | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Id Continuous Drain Current | - | 180 A | - |
Rds On Drain Source Resistance | - | 900 uOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 225 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 250 W | - |
Channel Mode | - | Enhancement | - |
Series | - | XPB180N04 | - |
Fall Time | - | 49 ns | - |
Rise Time | - | 24 ns | - |
Typical Turn Off Delay Time | - | 50 ns | - |
Typical Turn On Delay Time | - | 44 ns | - |
Unit Weight | - | 0.054294 oz | - |