 | | | |
| PartNumber | IPB100N12S305ATMA1 | IPB100N10S3-05 | IPB100N10S305ATMA1 |
| Description | MOSFET N-CHANNEL 100+ | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPB100N12S3-05 SP001399682 | IPB100N10S305ATMA1 IPB1N1S35XT SP000261243 | IPB100N10S3-05 IPB1N1S35XT SP000261243 |
| Unit Weight | 0.077603 oz | 0.139332 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Rds On Drain Source Resistance | - | 4.8 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 300 W | - |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | - |
| Tradename | - | OptiMOS | - |
| Series | - | OptiMOS-T | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 20 ns | - |
| Rise Time | - | 17 ns | - |
| Typical Turn Off Delay Time | - | 60 ns | - |
| Typical Turn On Delay Time | - | 34 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB110N20N3LFATMA1 | MOSFET | |
| IPB100N12S305ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPB107N20NAXT | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB107N20NA | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB107N20N3 G | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB108N15N3 G | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 | ||
| IPB107N20N3GATMA1 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB100N10S3-05 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | ||
| IPB107N20NAATMA1 | MOSFET Mosfet, DCtoDC Nchannel 200V | ||
| IPB100N12S305ATMA1 | MOSFET N-CH 120V 100A TO263-3 | ||
| IPB110N20N3LFATMA1 | MOSFET N-CH 200 D2PAK-3 | ||
| IPB110N06L G | MOSFET N-CH 60V 78A TO-263 | ||
| IPB100N10S305ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB107N20NAATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB108N15N3GATMA1 | MOSFET N-CH 150V 83A TO263-3 | ||
| IPB10N03LB | MOSFET N-CH 30V 50A D2PAK | ||
| IPB10N03LB G | MOSFET N-CH 30V 50A D2PAK | ||
Infineon Technologies |
IPB100N10S305ATMA1 | MOSFET N-CHANNEL_100+ | |
| IPB108N15N3GATMA1 | MOSFET MV POWER MOS | ||
| IPB107N20N3G | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB108N15N3G 108N15N | New and Original | ||
| IPB107N20NAXT | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB100N10S3-05 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | ||
| IPB100N10S3-05(1) | New and Original | ||
| IPB100N10S3-05. | New and Original | ||
| IPB100N12S3-05 | New and Original | ||
| IPB100P03L-04 | New and Original | ||
| IPB100P03P3L-04 | - Bulk (Alt: IPB100P03P3L-04) | ||
| IPB107N20 | New and Original | ||
| IPB107N20N3 | New and Original | ||
| IPB107N20N3 G | Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) | ||
| IPB107N20N3G 107N20N | New and Original | ||
| IPB107N20N3G , 2SD1949K- | New and Original | ||
| IPB107N20N3G 0.2W | New and Original | ||
| IPB107N20N3GS | New and Original | ||
| IPB107N20N3GXT | New and Original | ||
| IPB107N20NA | - Bulk (Alt: IPB107N20NA) | ||
| IPB107N20NA 107N20NA | New and Original | ||
| IPB108N15N3 | New and Original | ||
| IPB108N15N3 G | Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G) | ||
| IPB108N15N3G | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB108N15N3GS | New and Original | ||
| IPB10N03 | New and Original | ||
| IPB10N03L | MOSFET Transistor, N-Channel, TO-263AB | ||
| IPB10N03L 10N03L | New and Original | ||
| IPB10N03L E3045A | New and Original | ||
| IPB10N03L-E045 | New and Original | ||
| IPB10N03LBG | New and Original | ||
| IPB10N03LG | New and Original |