SIHB22N60EL-GE3

SIHB22N60EL-GE3
Mfr. #:
SIHB22N60EL-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB22N60EL-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60EL-GE3 DatasheetSIHB22N60EL-GE3 Datasheet (P4-P6)SIHB22N60EL-GE3 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
180 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
227 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Width:
9.65 mm
Brand:
Vishay / Siliconix
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
66 ns
Typical Turn-On Delay Time:
18 ns
Unit Weight:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 21A 3-Pin D2PAK
***ark
N-Channel 600V
Part # Mfg. Description Stock Price
SIHB22N60EL-GE3
DISTI # SIHB22N60EL-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 21A TO263
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$2.2344
SIHB22N60EL-GE3
DISTI # SIHB22N60EL-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60EL-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$1.9900
  • 12000:$2.0900
  • 18000:$2.0900
  • 6000:$2.1900
  • 3000:$2.2900
SIHB22N60EL-GE3
DISTI # SIHB22N60EL-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin D2PAK (Alt: SIHB22N60EL-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.1900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 25:€2.5900
  • 10:€3.1900
  • 1:€4.0900
SIHB22N60EL-GE3
DISTI # 78-SIHB22N60EL-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
0
  • 1:$4.4900
  • 10:$3.7200
  • 100:$3.0600
  • 250:$2.9700
  • 500:$2.6600
  • 1000:$2.2400
  • 3000:$2.1300
Image Part # Description
SIHB22N60EF-GE3

Mfr.#: SIHB22N60EF-GE3

OMO.#: OMO-SIHB22N60EF-GE3

MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
SIHB22N60AEL-GE3

Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60AE-GE3

Mfr.#: SIHB22N60AE-GE3

OMO.#: OMO-SIHB22N60AE-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N65E-GE3

Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3

MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60ET1-GE3

Mfr.#: SIHB22N60ET1-GE3

OMO.#: OMO-SIHB22N60ET1-GE3

MOSFET 600V Vds E Series D2PAK TO-263
SIHB22N60AEL-GE3

Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

MOSFET N-CHAN 600V
SIHB22N60E-GE3

Mfr.#: SIHB22N60E-GE3

OMO.#: OMO-SIHB22N60E-GE3-VISHAY

MOSFET N-CH 600V 21A D2PAK
SIHB22N60SE3

Mfr.#: SIHB22N60SE3

OMO.#: OMO-SIHB22N60SE3-1190

Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N60SGE3

Mfr.#: SIHB22N60SGE3

OMO.#: OMO-SIHB22N60SGE3-1190

Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N60EL-GE3

Mfr.#: SIHB22N60EL-GE3

OMO.#: OMO-SIHB22N60EL-GE3-VISHAY

MOSFET N-CH 600V 21A TO263
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of SIHB22N60EL-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.49
$4.49
10
$3.72
$37.20
100
$3.06
$306.00
250
$2.97
$742.50
500
$2.66
$1 330.00
1000
$2.24
$2 240.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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