STGP40V60F

Mfr. #:: STGP40V60F
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGP40V60F Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STGP40V60F more Information STGP40V60F Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.35 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 80 A

Pd - Power Dissipation:: 283 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Series:: STGP40V60F

Packaging:: Tube

Continuous Collector Current Ic Max:: 40 A

Brand:: STMicroelectronics

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Unit Weight:: 0.211644 oz

Tags: STGP, STG

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Vacuum Packaging with PL

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STGP40V60F Description

***ical: Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, SINGLE, 600V, 80A, TO-220AB; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 283W; Collector Emitter Vol; Available until stocks are exhausted Alternative available

***ure Electronics: IXGP30N60C3D4 Series 600 V 30 A Flange Mount High-Speed PT IGBT - TO-220AB

***i-Key: IGBT 600V 60A 220W TO220AB

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***th Star Micro: IGBT 600V TO-220AB

***el Nordic: Contact for details

***p One Stop Global: Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS

***(Formerly Allied Electronics): 600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF

***ineon: Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding

***ure Electronics: IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB

***trelec: IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W

***ment14 APAC: IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 34A 31000mW 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 600 V, 30 A high speed trench gate field-stop IGBT

***nell: IGBT, SINGLE, 600V, 60A, TO-220FP-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017)

***ical: Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP

***el Electronic: In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***(Formerly Allied Electronics): STGF10NC60KD,IGBT N-ch 600V 10A TO220FP

***nell: IGBT, TO-220FP; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating

***ure Electronics: IRG4IBC30WPbF Series 600 V 17 A Flange Mount N-Channel IGBT - TO-220 Full-Pak

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package, FULLPAK220-3, RoHS

***et: Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220 Full-Pak

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:17A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:45W; Package/Case:TO-220 ;RoHS Compliant: Yes

***nell: IGBT, TO-220 FULLPAK; Transistor type:IGBT; Current, Ic continuous a max:17A; Voltage, Vce sat max:2.1V; Power dissipation:45W; Case style:TO-220 Fullpak; Current, Icm pulsed:92A; Pins, No. of:3; Power, Pd:45W; Temperature, current:25°C; Temperature, full power rating:25°C; Time, fall:67ns; Time, fall typ:67ns; Time, rise:16ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V

***ical: Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin(3+Tab) TO-220FP Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***el Electronic: STMICROELECTRONICS STGF14NC60KD IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins

***nell: IGBT, TO-220FP; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 28W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating

STGP40V60F More Information

IGBT V Series: STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.

Market price

Part #	Mfg.	Description	Stock	Price
STGP40V60F DISTI # V99:2348_17693916	STMicroelectronics	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1000	100:$1.4260 25:$1.5850 10:$1.7610 1:$1.9560
STGP40V60F DISTI # 497-13872-5-ND	STMicroelectronics	IGBT 600V 80A 283W TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.7264 500:$2.0103 100:$2.3270 50:$2.6546 1:$3.0900
STGP40V60F DISTI # 27154920	STMicroelectronics	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1000	100:$1.4260 25:$1.5850 10:$1.7610 5:$1.9560
STGP40V60F DISTI # STGP40V60F	STMicroelectronics	Trans IGBT Chip N-CH 600V 80A 3-PIn TO-220 Tube - Rail/Tube (Alt: STGP40V60F) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.4900 2000:$1.3900 4000:$1.3900 6000:$1.2900 10000:$1.2900
STGP40V60F DISTI # STGP40V60F	STMicroelectronics	Trans IGBT Chip N-CH 600V 80A 3-PIn TO-220 Tube (Alt: STGP40V60F) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 0
STGP40V60F	STMicroelectronics	STGP40V60F Series 600 V 40 A Very High Speed Trench Gate Field-Stop IGBT -TO-220 RoHS: Compliant	495Tube	5:$2.4300 150:$2.1400
STGP40V60F DISTI # 511-STGP40V60F	STMicroelectronics	IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT RoHS: Compliant	0	1:$2.7600 10:$2.3400 100:$2.0300 250:$1.9300 500:$1.7300 1000:$1.4600 2000:$1.3900 5000:$1.3400
STGP40V60F DISTI # 7919370P	STMicroelectronics	IGBT TRENCH GATE 600V 40A/100 DEG TO220, TU	1000	50:£1.6960 100:£1.4600
STGP40V60F	STMicroelectronics	INSTOCK	495
STGP40V60F DISTI # C1S730200792543	STMicroelectronics	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1000	100:$1.4260 25:$1.5850 1:$2.0000
STGP40V60F DISTI # XSFP00000100809	STMicroelectronics	Insulated Gate Bipolar Transistor RoHS: Compliant	333	42:$4.8600 333:$4.4200
STGP40V60F DISTI # 2807169	STMicroelectronics	IGBT, SINGLE, 600V, 80A, TO-220AB RoHS: Compliant	0	1:£2.1300 10:£1.7000 100:£1.4600 250:£1.4200 500:£1.3800

Image	Part #	Description
	Mfr.#: STGP4M65DF2 OMO.#: OMO-STGP4M65DF2	IGBT Transistors Trench Gate IGBT M Series 650V 4A
	Mfr.#: STGP40V60F OMO.#: OMO-STGP40V60F	IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
	Mfr.#: STGP40V60F OMO.#: OMO-STGP40V60F-STMICROELECTRONICS	IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
	Mfr.#: STGP4M65DF2 OMO.#: OMO-STGP4M65DF2-STMICROELECTRONICS	IGBT M SERIES 650V 4A LOW LOSS

STGP40V60F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes