SIHB12N60ET5-GE3

Mfr. #:: SIHB12N60ET5-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET N-Channel 600V
Lifecycle:: New from this manufacturer.
Datasheet:: SIHB12N60ET5-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIHB12N60ET5-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 12 A

Rds On - Drain-Source Resistance:: 380 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 147 W

Configuration:: Single

Channel Mode:: Enhancement

Height:: 4.83 mm

Length:: 10.67 mm

Series:: E

Width:: 9.65 mm

Brand:: Vishay / Siliconix

Fall Time:: 19 ns

Product Type:: MOSFET

Rise Time:: 19 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 35 ns

Typical Turn-On Delay Time:: 14 ns

Unit Weight:: 0.077603 oz

Tags: SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB12N60ET5-GE3 Description

***i-Key: MOSFET N-CH 600V 12A TO263

***ronik: N-CH 600V 12A 380mOhm TO-263

***ark: N-CHANNEL 600V

SIHB12N60ET5-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHB12N60ET5-GE3 DISTI # SIHB12N60ET5-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 12A TO263 RoHS: Not compliant Min Qty: 1 Container: Bulk	800In Stock	5000:$0.9145 2500:$0.9497 1000:$1.0201 500:$1.2311 100:$1.4985 10:$1.8640 1:$2.0800
SIHB12N60ET5-GE3 DISTI # SIHB12N60ET5-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET5-GE3) RoHS: Not Compliant Min Qty: 800 Container: Bulk	Americas - 0	8000:$0.8579 4800:$0.8819 3200:$0.9069 1600:$0.9459 800:$0.9749
SIHB12N60ET5-GE3 DISTI # 78-SIHB12N60ET5-GE3	Vishay Intertechnologies	MOSFET N-Channel 600V RoHS: Compliant	0	800:$1.1700 1600:$0.9710 3200:$0.9040 5600:$0.8710
SIHB12N60ET5-GE3 DISTI # TMOS2029	Vishay Intertechnologies	N-CH 600V 12A 380mOhm TO-263 RoHS: Compliant	Stock DE - 3200Stock HK - 0Stock US - 0	800:$1.3400 1600:$1.2600 2400:$1.1800 3200:$1.0334

Related products

Image	Part #	Description
	Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3	MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB12N60ET1-GE3 OMO.#: OMO-SIHB12N60ET1-GE3	MOSFET N-Channel 600V
	Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3-VISHAY	Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
	Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3-VISHAY	IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
	Mfr.#: SIHB12N60E OMO.#: OMO-SIHB12N60E-1190	New and Original
	Mfr.#: SIHB12N60EGE3 OMO.#: OMO-SIHB12N60EGE3-1190	Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: SIHB12N65E OMO.#: OMO-SIHB12N65E-1190	New and Original
	Mfr.#: SIHB12N60ET1-GE3 OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY	MOSFET N-CH 600V 12A TO263
	Mfr.#: SIHB12N60ET5-GE3 OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY	MOSFET N-CH 600V 12A TO263

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of SIHB12N60ET5-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

800: ~~$1.17~~; ~~$936.00~~

1600: ~~$0.97~~; ~~$1 553.60~~

3200: ~~$0.90~~; ~~$2 892.80~~

5600: ~~$0.87~~; ~~$4 877.60~~

10400: ~~$0.84~~; ~~$8 704.80~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SIHB12N60 5
SIHB12N6 7
SIHB12N 10
SIHB12 11
SIHB1 27
SIHB 76
SIH 797

Newest Products

Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
Compare SIHB12N60ET5-GE3

SIHB12N60E vs SIHB12N60EGE3 vs SIHB12N60ET1GE3
Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
50 A VRPower® Solution (DrMOS)

Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products

SIHB12N60ET5-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes