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SIRA22DP-T1-RE3

SIRA22DP-T1-RE3
Mfr. #:
SIRA22DP-T1-RE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 25V Vds 16V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIRA22DP-T1-RE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRA22DP-T1-RE3 DatasheetSIRA22DP-T1-RE3 Datasheet (P4-P6)SIRA22DP-T1-RE3 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
1.17 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.2 V
Vgs - Gate-Source Voltage:
16 V, - 12 V
Qg - Gate Charge:
45.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83.3 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIR
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
89 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
61 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
37 ns
Tags
SIRA2, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 25V 60A POWERPAKSO-8
***ark
N-CHANNEL 25-V (D-S) MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:83.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 25V, 60A, 150°C, 83,3W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00063ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:83.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Part # Mfg. Description Stock Price
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 15000:$0.5752
  • 6000:$0.5977
  • 3000:$0.6292
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.6943
  • 500:$0.8795
  • 100:$1.0646
  • 10:$1.3660
  • 1:$1.5300
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.6943
  • 500:$0.8795
  • 100:$1.0646
  • 10:$1.3660
  • 1:$1.5300
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRA22DP-T1-RE3)
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5479
  • 30000:$0.5629
  • 18000:$0.5789
  • 12000:$0.6039
  • 6000:$0.6229
SIRA22DP-T1-RE3
DISTI # 59AC7423		Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 10000:$0.5440
  • 6000:$0.5570
  • 4000:$0.5780
  • 2000:$0.6420
  • 1000:$0.7070
  • 1:$0.7370
SIRA22DP-T1-RE3
DISTI # 78-SIRA22DP-T1-RE3		Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAK SO-8
RoHS: Compliant		6000
  • 1:$1.4900
  • 10:$1.2300
  • 100:$0.9450
  • 500:$0.8130
  • 1000:$0.6410
  • 3000:$0.5990
  • 6000:$0.5690
  • 9000:$0.5470
SIRA22DP-T1-RE3
DISTI # 2932947		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W
RoHS: Compliant		5979
  • 1000:$0.9650
  • 500:$1.0200
  • 250:$1.2100
  • 100:$1.4600
  • 10:$1.8600
  • 1:$2.2500
SIRA22DP-T1-RE3
DISTI # 2932947		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W5994
  • 500:£0.5900
  • 250:£0.6380
  • 100:£0.6860
  • 10:£0.9380
  • 1:£1.2400
Image Part # Description
SIRA22DP-T1-RE3

Mfr.#: SIRA22DP-T1-RE3

OMO.#: OMO-SIRA22DP-T1-RE3

 MOSFET 25V Vds 16V Vgs PowerPAK SO-8
SIRA22DP-T1-RE3

Mfr.#: SIRA22DP-T1-RE3

OMO.#: OMO-SIRA22DP-T1-RE3-VISHAY

 MOSFET N-CH 25V 60A POWERPAKSO-8
Availability
Stock:
Available
On Order:
1989
Enter Quantity:
Current price of SIRA22DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.49
$1.49
10
$1.23
$12.30
100
$0.94
$94.50
500
$0.81
$406.50
1000
$0.64
$641.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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