STGPL6NC60DI

Mfr. #:: STGPL6NC60DI
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors 600 V - 6 A Hyper fast IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGPL6NC60DI Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: STGPL6NC60DI more Information STGPL6NC60DI Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.9 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 14 A

Pd - Power Dissipation:: 56 W

Series:: STGPL6NC60DI

Packaging:: Tube

Brand:: STMicroelectronics

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Unit Weight:: 0.081130 oz

Tags: STGP, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGPL6NC60DI Description

***ical: Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: STG Series Powermesh Low Turn Off Energy Through Hole IGBT - TO-220-2

***r Electronics: Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 6 A, 600 V hyper fast IGBT with Ultrafast diode

***-Wing Technology: STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ure Electronics: STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

***ical: Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ment14 APAC: IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3

***ineon SCT: Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***p One Stop: Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP - TO-220FP

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;

***nell: IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
STGPL6NC60DI DISTI # 497-10072-5-ND	STMicroelectronics	IGBT 600V 14A 56W TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$0.8633
STGPL6NC60DI DISTI # STGPL6NC60DI	STMicroelectronics	Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGPL6NC60DI) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.8499 2000:$0.8099 4000:$0.7729 6000:$0.7389 10000:$0.7239
STGPL6NC60DI DISTI # STGPL6NC60DI	STMicroelectronics	Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube (Alt: STGPL6NC60DI) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0
STGPL6NC60DI DISTI # 511-STGPL6NC60DI	STMicroelectronics	IGBT Transistors 600 V - 6 A Hyper fast IGBT RoHS: Compliant	0	1:$1.6700 10:$1.4200 100:$1.1400 500:$0.9930 1000:$0.8230

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Availability

Stock:: 996
On Order:: 2979
Enter Quantity:

Current price of STGPL6NC60DI is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.66~~; ~~$1.66~~

10: ~~$1.41~~; ~~$14.10~~

100: ~~$1.13~~; ~~$113.00~~

500: ~~$0.99~~; ~~$496.50~~

1000: ~~$0.82~~; ~~$823.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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STGPL6NC60DI

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes