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ELECTRICAL CHARACTERISTICS (V
IN_SW
= V
IN
= V
ISNS1+
= V
ISNS1
= V
ISNS2+
= V
ISNS2
= 13.2 V, SYS_EN = LDO_EN =
HS_EN = 5 V, VOUT3 = 3.3 V, VOUT4 = 8.5 V, IOUT[1:4] = 0 A) Min/Max values are valid for the temperature range 40°C v T
J
v
150°C unless noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter UnitMaxTypMinConditionsSymbol
LOW DROPOUT LINEAR REGULATOR CONTROLLER (LDO1, VOUT3) SPECIFICATIONS
Current Limit
ISNS1+ leakage current I
ISNS1+
SYS_EN = 0, T
J
= 25°C, V
ISNS1+
= 13.2 V 100 500 nA
ISNS1 leakage current I
ISNS1
SYS_EN = 0, T
J
= 25°C, V
ISNS1
= 13.2 V 100 500 nA
Short circuit threshold voltage V
LR_FB1
% of V
REF
60 70 80 %
Short circuit blanking time From rising edge of LDO_EN 10 12 14 ms
Error Amplifier
Feedback bias current LR_FB1 = 0.5 V 100 500 nA
Maximum |V
GS
| 2 mA, internally clamped 10 11.7 13.5 V
LOW DROPOUT LINEAR REGULATOR CONTROLLER (LDO2, VOUT4) SPECIFICATIONS
Output Voltage Regulation
Output voltage accuracy V
LR_FB2
tied to VOUT4 directly,
NTD20P06L pass device
2 2 %
Output voltage line regulation IOUT4 = 10 mA, 9 V v V
ISNS2+
v 18 V,
NTD20P06L pass device
0.25 0.01 0.25 %
Output voltage load regulation 1 mA v IOUT4 v 500 mA, NTD20P06L
pass device
0.5 0.2 0.5 %
Output load capacitance range C
OUT4
(Note 1) 10 100
mF
Output load capacitance ESR range (Note 1) 0.01 5
W
Power supply ripple rejection PSRR2 NTD20P06L pass device (Note 1) 60 dB
Current Limit
Current limit threshold voltage V
SNS2
V
ISNS2+
– V
ISNS2
90 110 130 mV
ISNS2+ leakage current I
ISNS2+
SYS_EN = 0, T
J
= 25°C, V
ISNS2+
= 13.2 V 100 500 nA
ISNS2 leakage current I
ISNS2
SYS_EN = 0, T
J
= 25°C, V
ISNS2
= 13.2 V 100 500 nA
Short circuit threshold voltage V
LR_FB2
% of V
REF
60 70 80 %
Short circuit blanking time From rising edge of LDO_EN 10 12 14 ms
Error Amplifier
Feedback bias current LR_FB2 = 0.5 V 100 500 nA
Maximum |V
GS
| 2 mA, internally clamped 10 11.7 13.5 V
Highside Load Switch (HSS)
Current Limit
Peak current limit I
HSSLIM
2.00 2.80 3.64 A
Short circuit timeout t
SCP
1.300 1.506 1.800 ms
Short circuit threshold voltage V
SCP(HS_S)
4.0 4.5 5.0 V
Current overload threshold voltage V
DS
V
IN
– V
HS_S
3.3 3.95 4.6 V
Current overload timeout 2.600 3.012 3.600 ms
Voltage Clamp
Source output positive clamping voltage V
CLAMP+
1 mA v I
HS_S
v 2 A
V
CLAMP+
v V
IN
v V
OVP
15.4 16.0 16.6 V
Source output negative clamping voltage V
CLAMP
I
LOADSW
= 50 mA 1.6 V
1. Guaranteed by design, not fully tested in production.
2. Indirectly guaranteed by test coverage of other parameters.
NCV8855
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ELECTRICAL CHARACTERISTICS (V
IN_SW
= V
IN
= V
ISNS1+
= V
ISNS1
= V
ISNS2+
= V
ISNS2
= 13.2 V, SYS_EN = LDO_EN =
HS_EN = 5 V, VOUT3 = 3.3 V, VOUT4 = 8.5 V, IOUT[1:4] = 0 A) Min/Max values are valid for the temperature range 40°C v T
J
v
150°C unless noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter UnitMaxTypMinConditionsSymbol
Highside Load Switch (HSS)
MOSFET
HSS R
DS(on)
V
GS(HSS)
= 8 V 233 442
mW
HSS dropout voltage I
HS_S
= 1 A 233 442 mV
Turn On/Off
Turn on time (resistive load)
R
HS_S
= 6.6 W, 90% VIN
40 80 120
ms
Turn off time
R
HS_S
= 6.6 W, 10% VIN
50 125 200
ms
1. Guaranteed by design, not fully tested in production.
2. Indirectly guaranteed by test coverage of other parameters.
V
HS_S
I
LOAD
2.8A
V
DS
=3.75V
HS Current Overload
(Latched shutdown of HS only)
HS_EN
4.5V
1.506 msec V
DS
w
3.75 V
3.012 msec
Figure 3.
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TYPICAL PERFORMANCE CHARACTERISTICS
T
J
, JUNCTION TEMPERATURE (°C)
15012510025050
167.4
167.8
168.2
168.6
169.0
f
SW
(kHz)
Figure 4. Switching Frequency vs. Junction
Temperature
Figure 5. Reference Voltage vs. Junction
Temperature
Figure 6. HSS Current Limit vs. Junction
Temperature
Figure 7. SMPS1 NonOverlap Time vs.
Junction Temperature
Figure 8. Drive Voltage vs. Junction
Temperature
755025
T
J
, JUNCTION TEMPERATURE (°C)
15012510025050
0.796
0.798
0.800
0.802
0.808
V
REF
(V)
755025
167.6
168.0
168.4
168.8
169.2
169.4
T
J
, JUNCTION TEMPERATURE (°C)
15012510025050
2.4
2.6
2.8
3.0
3.2
HSS CURRENT LIMIT (A)
755025
0.804
2.5
2.7
2.9
3.1
T
J
, JUNCTION TEMPERATURE (°C)
15012510025050
30
40
50
60
t
NOL
(ns)
755025
35
45
55
65
T
J
, JUNCTION TEMPERATURE (°C)
15012510025050
7.06
7.08
7.10
7.12
7.18
V
DRV_VPP
(V)
755025
7.14
7.16
T
J
, JUNCTION TEMPERATURE (°C)
15
0
12510025050
78.6
79.0
79.4
79.8
80.2
SCTH (%)
755025
78.8
79.2
79.6
80.0
80.4
80.8
80.6
SMPS2
SMPS1
Figure 9. Short Circuit Threshold vs. Junction
Temperature

NCV8855BMNR2GEVB

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
BOARD EVALUATION NCV8855 ASIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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