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NCV8855BMNR2GEVB

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
NCV8855
http://onsemi.com
7
ELECTRICAL CHARACTERISTICS (V
IN_SW
= V
IN
= V
ISNS1+
= V
ISNS1−
= V
ISNS2+
= V
ISNS2−
= 13.2 V, SYS_EN = LDO_EN =
HS_EN = 5 V, VOUT3 = 3.3 V, VOUT4 = 8.5 V, IOUT[1:4] = 0 A) Min/Max values are valid for the temperature range −40°C v T
J
v
150°C unless noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter UnitMaxTypMinConditionsSymbol
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION
Thermal Monitoring (T
MON_SW,
SMPS2 internal MOSFET temperature monitor)
T
WARN2
hysteresis 10 20 °C
Thermal shutdown temperature TSD2 160 170 180 °C
Delta junction temperature
(TSD2−T
WARN2
)
10 20 30 °C
HOT_FLG
Voltage low threshold
T
J
> TWARN[x], 1 kW pullup to 5 V
0.4 V
Leakage current
1 kW pull−up to 5 V, T
J
= 25°C
100 500 nA
Sink capability V
HOT_FLG
= 0.8 V 4.6 mA
System Enable
Logic high 2.0 V
Logic low 0.8 V
Pull down resistance T
J
= 25°C 500
kW
High−Side Enable
HS_EN logic high 2.0 V
HS_EN logic low 0.8 V
Pull down current V
HS_EN
= 5 V
V
HS_EN
= 0.8 V 2
5
5
10
mA
Leakage current I
HS_EN
SYS_EN = 0 V, V
HS_EN
= 5 V 100 500 nA
LDO Enable
Logic high 2.0 V
Logic low 0.8 V
Pull down current V
LDO_EN
= 5 V
V
LDO_EN
= 0.8 V 2
5
5
10
mA
Leakage current I
LDO_EN
SYS_EN = 0 V, V
LDO_EN
= 5 V 100 500 nA
SWITCH−MODE POWER SUPPLY CONTROLLER (SMPS1, VOUT1) SPECIFICATIONS
Over Current Protection
OCSET current sink
R
OCSET
= 10 kW connected to 13.2 V
45 55 65
mA
OCSET leakage current SYS_EN = 0 V, V
OCSET
= 13.2 V,
T
J
= 25°C
100 500 nA
OCSET comparator differential range (Note 1) 50 750 mV
OCSET comparator common−mode
range
(Note 1) 4.0 19 V
Current limit response time From rising edge of SN1 100 200 275 ns
Short circuit threshold voltage SCTH1 V
SW_FB1
% of V
REF
75 80 85 %
Short circuit protection startup delay From SYS_EN rising edge, % of t
SS1,
SW_FB1 = 0.5 V, (Note 2)
100 125 150 %
Internal Soft−Start
Soft−start time t
SS1
3 5 7 ms
1. Guaranteed by design, not fully tested in production.
2. Indirectly guaranteed by test coverage of other parameters.
NCV8855
http://onsemi.com
8
ELECTRICAL CHARACTERISTICS (V
IN_SW
= V
IN
= V
ISNS1+
= V
ISNS1−
= V
ISNS2+
= V
ISNS2−
= 13.2 V, SYS_EN = LDO_EN =
HS_EN = 5 V, VOUT3 = 3.3 V, VOUT4 = 8.5 V, IOUT[1:4] = 0 A) Min/Max values are valid for the temperature range −40°C v T
J
v
150°C unless noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter UnitMaxTypMinConditionsSymbol
SWITCH−MODE POWER SUPPLY CONTROLLER (SMPS1, VOUT1) SPECIFICATIONS
Error Amplifier
Dc gain (Note 1) 70 85 dB
Gain−bandwidth product (Note 1) 8 10 MHz
SW_FB1 input bias current SW_FB1 = 0.8 V 100 nA
Input offset voltage (Note 1) 800
mV
Slew rate C
COMP1
= 50 pF, $1 mA dc load Slew rate
within ramp voltage levels (Note 1)
6 8
V/ms
COMP1 source current V
COMP1
= 2.2 V 1.5 8 mA
V
COMP1
= 3.2 V 1.6 8 mA
COMP1 sink current V
COMP1
= 2.2 V 1.1 8 mA
V
COMP1
= 1.1 V 0.7 8 mA
Minimum COMP1 voltage
I
COMP1
= 500 mA
1.05 V
Maximum COMP1 voltage I
COMP1
= 2 mA 3.3 V
Ramp maximum voltage 2.8 3.0 3.2 V
Ramp minimum voltage 1.1 1.2 1.3 V
Ramp voltage amplitude V
RAMP1
1.6 1.8 2.0 V
Duty Cycle Limitations
Minimum off time t
MINOFF1
GH1 falling to GL1 rising 80 140 200 ns
Minimum pulse width t
MINON1
GH1 rising to GH1 falling 120 250 300 ns
Gate Driver
GH1 source current V
GH1
– V
SN1
= 4 V, T
J
= 25°C 1.5 A
GH1 sink current V
GH1
– V
SN1
= 2 V, T
J
= 25°C 1.5 A
GL1 source current V
GL1
– PGND = 4 V, T
J
= 25°C 1.5 A
GL1 sink current V
GL1
– PGND = 1 V, T
J
= 25°C 1.5 A
SN1 falling to GL1 rising, non−overlap
time
t
NOLT
30 70 ns
GL1 falling to GH1 rising, non−overlap
time
30 70 ns
SN1 falling non−overlap threshold
voltage
1.0 1.8 3.0 V
GL1 falling non−overlap threshold
voltage
2 V
SN1 falling override timer 50 100 150 ns
SWITCH−MODE POWER SUPPLY REGULATOR (SMPS2, VOUT2) SPECIFICATIONS
Over Current Protection
Internal current limit 2.5 3.05 4.2 A
Current limit blanking time 100 200 ns
Short circuit threshold voltage SCTH2 V
SW_FB2
% of V
REF
75 85 95 %
Short circuit protection startup delay From SYS_EN rising edge, % of t
SS2,
SW_FB2 = 0.5 V
100 125 150 %
1. Guaranteed by design, not fully tested in production.
2. Indirectly guaranteed by test coverage of other parameters.
NCV8855
http://onsemi.com
9
ELECTRICAL CHARACTERISTICS (V
IN_SW
= V
IN
= V
ISNS1+
= V
ISNS1−
= V
ISNS2+
= V
ISNS2−
= 13.2 V, SYS_EN = LDO_EN =
HS_EN = 5 V, VOUT3 = 3.3 V, VOUT4 = 8.5 V, IOUT[1:4] = 0 A) Min/Max values are valid for the temperature range −40°C v T
J
v
150°C unless noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter UnitMaxTypMinConditionsSymbol
SWITCH−MODE POWER SUPPLY REGULATOR (SMPS2, VOUT2) SPECIFICATIONS
Internal Soft−start
Soft−start time t
SS2
SYNC floating 3 5 7 ms
Error Amplifier
Dc gain (Note 1) 70 85 dB
Gain−bandwidth product (Note 1) 8 10 MHz
SW_FB2 input bias current SW_FB2 = 0.8 V 100 500 nA
Input offset voltage 800
mV
Slew rate C
COMP2
= 50 pF, ±1 mA dc load Slew rate
within ramp voltage levels (Note 1)
6 8
V/ms
COMP2 source current V
COMP2
= 2.2 V 1.5 8 mA
V
COMP2
= 3.2 V 1.6 8 mA
COMP2 sink current V
COMP2
= 2.2 V 1.1 8 mA
V
COMP2
= 1.1 V 0.7 8 mA
Minimum COMP2 voltage
I
COMP2
= 500 mA
1.05 V
Maximum COMP2 voltage I
COMP2
= 2 mA 3.3 V
Ramp maximum voltage 2.8 3.0 3.2 V
Ramp minimum voltage 1.1 1.2 1.3 V
Ramp voltage amplitude V
RAMP2
1.6 1.8 2.0 V
Duty Cycle Limitations
Minimum off time t
MINOFF2
SN2 falling to SN2 rising 80 140 200 ns
Minimum pulse width t
MINON2
SN2 rising to SN2 falling, 120 250 300 ns
Switching MOSFET
N−channel MOSFET R
DS(on)
T
J
= 25°C, Guaranteed at Probe 300 360
mW
Turn−on time SN2 → 0 V to 13.2 V, IOUT = 1 A
(inductive load), T
J
= 25°C
30 ns
Turn−off time SN2 → 13.2 V to 0 V, IOUT = 1 A
(inductive load), T
J
= 25°C
30 ns
LOW DROPOUT LINEAR REGULATOR CONTROLLER (LDO1, VOUT3) SPECIFICATIONS
Output Voltage Regulation
Output voltage accuracy V
LR_FB1
tied to VOUT3 directly,
NTD20P06L pass device
−2 2 %
Output voltage line regulation IOUT3 = 10 mA, 4.5 V v V
ISNS1+
v 5.5 V,
NTD20P06L pass device
−0.25 0.01 0.25 %
Output voltage load regulation 1 mA v IOUT3 v 500 mA, V
ISNS1+
= 5 V,
NTD20P06L pass device
−0.5 0.2 0.5 %
Output load capacitance range C
OUT3
(Note 1) 10 100
mF
Output load capacitance ESR range (Note 1) 0.01 5
W
Power supply ripple rejection PSRR1 NTD20P06L pass device (Note 1) 60 dB
Current Limit
Current limit threshold voltage V
SNS1
V
ISNS1+
– V
ISNS1−
90 110 130 mV
1. Guaranteed by design, not fully tested in production.
2. Indirectly guaranteed by test coverage of other parameters.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

NCV8855BMNR2GEVB

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Manufacturer:
ON Semiconductor
Description:
BOARD EVALUATION NCV8855 ASIC
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