6.42
13
IDT71V546, 128K x 36, 3.3V Synchronous SRAM with
ZBT
Feature, Burst Counter and Pipelined Outputs Commercial and Industrial Temperature Ranges
Symbol Parameter Test Conditions
S133 S117 S100
UnitCom'l Ind Com'l Ind Com'l Ind
I
DD
Operating Power
Supply Current
Device Selected, Outputs Open,
ADV/LD = X, V
DD = Max., VIN > VIH or < VIL, f = fMAX
(2)
300 310 275 285 250 260
mA
I
SB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open, VDD = Max., VIN >
VHD or < VLD, f = 0
(2)
40 45 40 45 40 45 mA
I
SB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open, VDD = Max., VIN >
VHD or < VLD, f = fMAX
(2)
110 120 105 115 100 110
mA
I
SB3
Idle Power
Supply Current
Device Selected, Outputs Open, CEN > VIH VDD = Max.,
V
IN > VHD or < VLD, f = fMAX
(2)
40 45 40 45 40 45
mA
3821 tbl 21
DC Electrical Characteristics Over the Opearting Temperature
and Supply Voltage Range
(1)
(VDD = 3.3V +/-5%, VHD = VDD–0.2V, VLD = 0.2V)
DC Electrical Characteristics Over the Operating Temperature
and Supply Voltage Range
(VDD = 3.3V +/-5%)
Figure 2. Lumped Capacitive Load, Typical Derating
Figure 1. AC Test Load
AC Test Loads
AC Test Conditions
1
2
3
4
20 30 50 100 200
ΔtCD
(Typical, ns)
Capacitance (pF)
80
5
6
3821 drw 05
,
1.5V
50Ω
I/O
Z
0
=50Ω
3821 drw 04
+
,
NOTE:
1. The LBO pin will be internally pulled to VDD if it is not actively driven in the application.
Symbol Parameter Test Conditions Min. Max. Unit
|I
LI
| Input Leakage Current V
DD
= Max., V
IN
=
0V to V
DD
___
A
|I
LI
|
LBO Input Leakage Current
(1)
V
DD
= Max., V
IN
=
0V to V
DD
___
30 µA
|I
LO
|
Output Leakage Current
CE >
V
IH
or OE > V
IH
, V
OUT
= 0V toV
DD
, V
DD
= Max.
___
A
V
OL
Output Low Voltage I
OL
= 5mA, V
DD
= Min.
___
0.4 V
V
OH
Output High Voltage I
OH
= -5mA, V
DD
= Min. 2.4
___
V
3821 tbl 20
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC; f=0 means no input lines are changing.
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
0 to 3V
2ns
1.5V
1.5V
See Figures 1
3821 tbl 22
14
IDT71V546, 128K x 36, 3.3V Synchronous SRAM with
ZBT
Feature, Burst Counter and Pipelined Outputs Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V +/-5%, Commercial and Industrial Temperature Ranges)
NOTES:
1. tF = 1/tCYC.
2. Measured as HIGH above 2.0V and LOW below 0.8V.
3. Transition is measured ±200mV from steady-state.
4. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
5. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is about 2 ns faster than tCLZ (device turn-on) at a given temperature and voltage.
The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 3.465V) than tCHZ,
which is a Max. parameter (worse case at 70 deg. C, 3.135V).
Symbol Parameter
71V546S133 71V546S117 71V546S100
Unit
Min. Max. Min. Max. Min. Max.
Clock Parameters
t
CYC
Clock Cycle Time 7.5
____
8.5
____
10
____
ns
t
F
(1)
Clock Frequency
____
133
____
117
____
100 MHz
t
CH
(2)
Clock High Pulse Width 2.5
____
3
____
3.5
____
ns
t
CL
(2)
Clock Low Pulse Width 2.5
____
3
____
3.6
____
ns
Output Parameters
t
CD
Clock High to Valid Data
____
4.2
____
4.5
____
5ns
t
CDC
Clock High to Data Change 1.5
____
1.5
____
1.5
____
ns
t
CLZ
(3,4,5)
Clock High to Output Active 1.5
____
1.5
____
1.5
____
ns
t
CHZ
(3,4,5)
Clock High to Data High-Z 1.5 3.5 1.5 3.5 1.5 3.5 ns
t
OE
Output Enable Access Time
____
4.2
____
4.5
____
5ns
t
OLZ
(3,4)
Output Enable Low to Data Active 0
____
0
____
0
____
ns
t
OHZ
(3.4)
Output Enable High to Data High-Z
____
3.5
____
3.5
____
3.5 ns
Setup Times
t
SE
Clock Enable Setup Time 2.0
____
2.0
____
2.2
____
ns
t
SA
Address Setup Time 2.0
____
2.0
____
2.2
____
ns
t
SD
Data in Setup Time 1.7
____
1.7
____
2.0
____
ns
t
SW
Read/Write (R/W) Setup Time 2.0
____
2.0
____
2.2
____
ns
t
SADV
Advance/Load (ADV/LD) Setup Time 2.0
____
2.0
____
2.2
____
ns
t
SC
Chip Enable/Select Setup Time 2.0
____
2.0
____
2.2
____
ns
t
SB
Byte Write Enable (BWx) Setup Time 2.0
____
2.0
____
2.2
____
ns
Hold Times
t
HE
Clock Enable Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HA
Address Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HD
Data in Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HW
Read/Write (R/W) Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HADV
Advance/Load (ADV/LD) Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HC
Chip Enable/Select Hold Time 0.5
____
0.5
____
0.5
____
ns
t
HB
Byte Write Enable (BWx) Hold Time 0.5
____
0.5
____
0.5
____
ns
3821 tbl 23
6.42
15
IDT71V546, 128K x 36, 3.3V Synchronous SRAM with
ZBT
Feature, Burst Counter and Pipelined Outputs Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle
(1,2,3,4)
NOTES:
1. Q (A
1) represents the first output from the external address A1. Q (A2) represents the first output from the external address A2; Q (A2+1) represents the next output data in the
burst sequence of the base address A
2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE
2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address
and control are loaded into the SRAM.
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71V546S100PFGI8

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 128Kx36 ZBT SYNC 3.3V PIPELINED SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union