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MT8LSDT3264HG-133D2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
64MB, 128MB, 256MB (x64, DR)
144-PIN SDRAM SODIMM
09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
19 ©2004 Micron Technology, Inc. All rights reserved.
Table 21: Serial Presence-Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”; notes appear at end of Serial Presence-Detect Matrix
BYTE DESCRIPTION
ENTRY
(VERSION) MT8LSDT864H
MT8LSDT1664
H
MT8LSDT3264H
0
Number of Bytes Used by Micron
128 80 80 80
1
Total Number of SPD Memory Bytes
256 08 08 08
2
Memory Type
SDRAM 04 04 04
3
Number of Row Addresses
12 or 13 0C 0C 0D
4
Number of Column Addresses
8 or 9 08 09 09
5
Number of Module Ranks
2 02 02 02
6
Module Data Width
64 40 40 40
7
Module Data Width (Continued)
0000000
8
Module Voltage Interface Levels
LVTTL 01 01 01
9
SDRAM Cycle Time,
t
CK (CAS Latency = 3)
7ns (-13E)
7.5ns (-133)
8ns (-10E)
70
75
80
70
75
80
70
75
80
10
SDRAM Access from CLK,
t
AC (CAS Latency = 3)
5.4ns (-13E/-133)
6ns (-10E)
54
60
54
60
54
60
11
Module Configuration Type
None 00 00 00
12
Refresh Rate/Type
15.6µs or
7.81µs/SELF
80 80 82
13
SDRAM Width (Primary SDRAM)
16 10 10 10
14
Error-checking SDRAM Data Width
00 00 00
15
Minimum Clock Delay from Back-to-Back
Random Column Addresses,
t
CCD
1010101
16
Burst Lengths Supported
1, 2, 4, 8, PAGE 8F 8F 8F
17
Number of Banks on SDRAM Device
4040404
18
CAS Latencies Supported
2, 3 06 06 06
19
CS Latency
0010101
20
WE Latency
0010101
21
SDRAM Module Attributes
Unbuffered 00 00 00
22
SDRAM Device Attributes: General
0E 0E 0E 0E
23
SDRAM Cycle Time,
t
CK
(CAS Latency = 2) 10 (-133/-10E) A0
7.5ns (13E)
10ns (-133/-10E)
75
A0
75
A0
75
A0
24
SDRAM Access from CLK,
t
AC
(CAS Latency = 2)
54ns (-13E)
6ns (-133/-10E)
54
60
54
60
54
60
25
SDRAM Cycle Time,
t
CK
(CAS Latency = 1)
–000000
26
SDRAM Access from CLK,
t
AC
(CAS Latency = 1)
–000000
27
Minimum Row Precharge Time,
t
RP
15ns (-13E)
20ns (-133/-10E)
0F
14
0F
14
0F
14
28
Minimum Row Active to Row Active,
t
RRD
14ns (-13E)
15ns (-133)
20ns (-10E)
0E
0F
14
0E
0F
14
0E
0F
14
29
Minimum RAS# to CAS# Delay,
t
RCD
15ns (-13E)
20ns
(-133/-10E)
0F
14
0F
14
0F
14
30
Minimum RAS# Pulse Width,
t
RAS (See note 1)
45ns (-13E)
44ns (133)
50ns (-10E)
2D
2C
32
2D
2C
32
2D
2C
32
64MB, 128MB, 256MB (x64, DR)
144-PIN SDRAM SODIMM
09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
20 ©2004 Micron Technology, Inc. All rights reserved.
NOTE:
1. The value of
t
RAS used for -13E modules is calculated from
t
RC -
t
RP. Actual device spec. value is 37ns.
31
Module Rank Density
32MB, 64MB, or
128MB
08 10 20
32
Command and Address Setup Time,
t
AS,
t
CMS
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
15
20
33
Command and Address Hold Time,
t
AH,
t
CMH
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
08
10
34
Data Signal Input Setup Time,
t
DS
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
15
20
35
Data Signal Input Hold Time,
t
DH
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
08
10
36–
40
Reserved
00 00 00
41
Device Minimum Active/Auto-Refresh Time,
t
RC
66ns (-13E)
71ns (-133)
66ns (-10E)
3C
42
46
3C
42
46
3C
42
46
42–
61
Reserved
00 00 00
62
SPD Revision
REV. 2.0 02 02 02
63
Checksum For Bytes 0-62
(-13E)
(-133)
(-10E)
83
CF
1B
8C
D8
24
9F
EB
37
64
Manufacturer’s JEDEC ID Code
MICRON 2C 2C 2C
65-71
Manufacturer’s JEDEC ID Code (Cont.)
FF FF FF
72
Manufacturing Location
1– 12 01–0C 01–0C 01–0C
73-90
Module Part Number (ASCII)
Variable Data Variable Data Variable Data
91
PCB Identification Code
1–9 01–09 01–09 01–09
92
Identification Code (Cont.)
0000000
93
Year of Manufacture in BCD
Variable Data Variable Data Variable Data
94
Week of Manufacture in BCD
Variable Data Variable Data Variable Data
95-98
Module Serial Number
Variable Data Variable Data Variable Data
99-125
Manufacturer-specific Data (RSVD)
–– –
126
System Frequency
100 MHz
(-13E/-133/-10E)
64 64 64
127
SDRAM Component & Clock Detail
CF CF CF
Table 21: Serial Presence-Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”; notes appear at end of Serial Presence-Detect Matrix
BYTE DESCRIPTION
ENTRY
(VERSION) MT8LSDT864H
MT8LSDT1664
H
MT8LSDT3264H
64MB, 128MB, 256MB (x64, DR)
144-PIN SDRAM SODIMM
09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
21 ©2004 Micron Technology, Inc. All rights reserved.
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
Figure 10: 144-Pin SODIMM
NOTE:
All dimensions in inches (millimeters); or typical where noted.
Data Sheet Designation
Released (No Mark): This data sheet contains mini-
mum and maximum limits specified over the complete
power supply and temperature range for production
devices. Although considered final, these specifica-
tions are subject to change, as further product devel-
opment and data characterization sometimes occur.
0.150 (3.80)
MAX
PIN 1
2.666 (67.72)
2.656 (67.45)
0.787 (20.00)
TYP
0.071 (1.80)
(2X)
2.386 (60.60)
0.0315 (0.80)
TYP
0.13 (3.30)
0.024 (0.60)
TYP
0.079 (2.00) R
(2X)
PIN 143
FRONT VIEW
0.079 (2.00)
0.236 (6.00)
2.504 (63.60)
0.100 (2.55)
0.059 (1.50)
TYP
0.157 (4.00)
1.255 (31.88)
1.245 (31.62)
U2
U3
U1
U4 U5
U9 U8 U7 U6
PIN 144
PIN 2
BACK VIEW
MAX
MIN
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

MT8LSDT3264HG-133D2

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Buy MT8LSDT3264HG-133D2
Manufacturer:
Micron
Description:
MODULE SDRAM 256MB 144SODIMM
Lifecycle:
New from this manufacturer.
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