64MB, 128MB, 256MB (x64, DR)
144-PIN SDRAM SODIMM
09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
7 ©2004 Micron Technology, Inc. All rights reserved.
Mode register bits M0–M2 specify the burst length,
M3 specifies the type of burst (sequential or inter-
leaved), M4–M6 specify the CAS latency, M7 and M8
specify the operating mode, M9 specifies the write
burst mode, and M10 and M11 are reserved for future
use. For 64MB and 128MB, Address A12 (M12) is unde-
fined but should be driven LOW during loading of the
mode register.
The mode register must be loaded when all device
banks are idle, and the controller must wait the speci-
fied time before initiating the subsequent operation.
Violating either of these requirements will result in
unspecified operation.
Burst Length
Read and write accesses to the SDRAM are burst ori-
ented, with the burst length being programmable, as
shown in Figure 4, Mode Register Definition Diagram.
The burst length determines the maximum number of
column locations that can be accessed for a given
READ or WRITE command. Burst lengths of 1, 2, 4, or 8
locations are available for both the sequential and the
interleaved burst types, and a full-page burst is avail-
able for the sequential type. The full-page burst is
used in conjunction with the BURST TERMINATE
command to generate arbitrary burst lengths.
Reserved states should not be used, as unknown
operation or incompatibility with future versions may
result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached, as shown in Table 7,
Burst Definition Table, on page 8. The block is
uniquely selected by A1–Ai when the burst length is set
to two; by A2–Ai when the burst length is set to four;
and by A3–Ai when the burst length is set to eight. See
Note 8 of Table 7, Burst Definition Table, on page 8 for
Ai values. The remaining (least significant) address
bit(s) is (are) used to select the starting location within
the block. Full-page bursts wrap within the page if the
boundary is reached, as shown in Table 7, Burst Defini-
tion Table, on page 8.
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 7, Burst
Definition Table, on page 8.
Figure 4: Mode Register Definition
Diagram
M3 = 0
1
2
4
8
Reserved
Reserved
Reserved
Full Page
M3 = 1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
Operating Mode
Standard Operation
All other states reserved
0
-
0
-
Defined
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
256MB Module
64MB Module and 128MB Module
M0
0
1
0
1
0
1
0
1
Burst LengthCAS Latency BT
A9
A7
A6 A5 A4
A3
A8
A2
A1
A0
Mode Register (Mx)
Address Bus
9
7
654
3
8
2
1
0
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
M6-M0
M8
M7
Op Mode
A10
A11
10
11
Reserved* WB
0
1
Write Burst Mode
Programmed Burst Length
Single Location Access
M9
*Should program
M12, M11, M10 = “0, 0, 0”
to ensure compatibility
with future devices.
*Should program
M11 and M10 = “0, 0”
to ensure compatibility
with future devices.
A12
12
Burst LengthCAS Latency BT
A9
A7
A6 A5 A4
A3
A8
A2
A1
A0
Mode Register (Mx)
Address Bus
9
7
654
3
8
2
1
0
Op Mode
A10
A11
10
11
Reserved* WB
64MB, 128MB, 256MB (x64, DR)
144-PIN SDRAM SODIMM
09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
8 ©2004 Micron Technology, Inc. All rights reserved.
Figure 5: CAS Latency Diagram
CAS Latency
The CAS latency is the delay, in clock cycles,
between the registration of a READ command and the
availability of the first piece of output data. The latency
can be set to two or three clocks.
If a READ command is registered at clock edge n,
and the latency is m clocks, the data will be available
by clock edge n + m. The DQ will start driving as a
result of the clock edge one cycle earlier (n + m - 1),
and, provided that the relevant access times are met,
the data will be valid by clock edge n + m. For example,
assuming that the clock cycle time is such that all rele-
vant access times are met, if a READ command is regis-
tered at T0 and the latency is programmed to two
clocks, the DQ will start driving after T1 and the data
will be valid by T2, as shown in Figure 5, CAS Latency
Diagram. Table 8, CAS Latency Table, on page 9 indi-
cates the operating frequencies at which each CAS
latency setting can be used.
Reserved states should not be used, because un-
known operation or incompatibility with future ver-
sions may result.
Operating Mode
The normal operating mode is selected by setting
M7 and M8 to zero; the other combinations of values
for M7 and M8 are reserved for future use and/or test
modes. The programmed burst length applies to both
READ and WRITE bursts.
Table 7: Burst Definition Table
BURST
LENGTH
STARTING
COLUMN
ADDRESS
ORDER OF ACCESSES WITHIN A
BURST
TYPE =
SEQUENTIAL
TYPE =
INTERLEAVED
2
A0
00-1 0-1
11-0 1-0
4
A1 A0
0 0 0-1-2-3 0-1-2-3
0 1 1-2-3-0 1-0-3-2
1 0 2-3-0-1 2-3-0-1
1 1 3-0-1-2 3-2-1-0
8
A2 A1 A0
0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
Full
Page
(y)
n = i
(location 0-y)
Cn, Cn + 1,
Cn + 2
Cn + 3, Cn + 4...
…Cn - 1,
Cn…
Not supported
NOTE:
1. For full-page accesses: y = 256 (64MB), y= 512 (128MB
and 256MB)
2. For a burst length of two, A1–Ai select the block-of-
two burst; A0 selects the starting column within the
block.
3. For a burst length of four, A2–Ai select the block-of-
four burst; A0–A1 select the starting column within
the block.
4. For a burst length of eight, A3–Ai select the block-of-
eight burst; A0–A2 select the starting column within
the block.
5. For a full-page burst, the full row is selected and A0–Ai
select the starting column.
6. Whenever a boundary of the block is reached within a
given sequence above, the following access wraps
within the block.
7. For a burst length of one, A0–Ai select the unique col-
umn to be accessed, and mode register bit M3 is
ignored.
8. i = 7 for 64MB modules
i = 8 for 128MB and 256MB modules
CLK
DQ
T2T1 T3T0
CAS Latency = 3
LZ
D
OUT
t
OH
t
COMMAND
NOPREAD
t
AC
NOP
T4
NOP
DON’T CARE
UNDEFINED
CLK
DQ
T2T1 T3T0
CAS Latency = 2
LZ
D
OUT
t
OH
t
COMMAND
NOPREAD
t
AC
NOP
64MB, 128MB, 256MB (x64, DR)
144-PIN SDRAM SODIMM
09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
9 ©2004 Micron Technology, Inc. All rights reserved.
Test modes and reserved states should not be used,
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via M0-
M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
Table 8: CAS Latency Table
ALLOWABLE OPERATING
CLOCK FREQUENCY (MHz)
SPEED CAS LATENCY = 2 CAS LATENCY = 3
-13E 133 143
-133 100 133
-10E 100 NA

MT8LSDT3264HG-133D2

Mfr. #:
Manufacturer:
Micron
Description:
MODULE SDRAM 256MB 144SODIMM
Lifecycle:
New from this manufacturer.
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