Automotive Full Bridge MOSFET Driver
A3921
16
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
voltage of the Zener diodes between the Cx and Sx pins. In most
applications, with a good ceramic capacitor the working voltage
can be limited to 16 V.
Bootstrap Charging
It is good practice to ensure the high-side bootstrap capacitor is
completely charged before a high-side PWM cycle is requested.
The time required to charge the capacitor, t
CHARGE
(μs), is
approximated by:
C
BOOT
× V
,
100
=
t
CHARGE
(6)
where C
BOOT
is the value of the bootstrap capacitor, in nF, and
V is the required voltage of the bootstrap capacitor.
At power-up and when the drives have been disabled for a long
time, the bootstrap capacitor can be completely discharged. In
this case V can be considered to be the full high-side drive
voltage, 12 V. Otherwise, V is the amount of voltage dropped
during the charge transfer, which should be 400 mV or less.
The capacitor is charged whenever the Sx pin is pulled low and
current flows from VREG through the internal bootstrap diode
circuit to C
BOOT
.
Bootstrap Charge Management
The A3921 provides automatic bootstrap capacitor charge man-
agement. The bootstrap capacitor voltage for each phase is con-
tinuously checked to ensure that it is above the bootstrap under-
voltage threshold, V
BOOTUV
. If the bootstrap capacitor voltage
drops below this threshold, the A3921 will turn on the necessary
low-side FET, and continue charging until the bootstrap capacitor
exceeds the undervoltage threshold plus the hysteresis, V
BOO-
TUV
+ V
BOOTUVhys
. The minimum charge time is typically 7 μs,
but may be longer for very large values of bootstrap capacitor
(>1000 nF). If the bootstrap capacitor voltage does not reach the
threshold within approximately 200 μs, an undervoltage fault will
be flagged.
VREG Capacitor Selection
The internal reference, VREG, supplies current for the low-side
gate drive circuits and the charging current for the bootstrap
capacitors. When a low-side FET is turned on, the gate-drive
circuit will provide the high transient current to the gate that is
necessary to turn on the FET quickly. This current, which can be
several hundred milliamperes, cannot be provided directly by the
limited output of the VREG regulator, and must be supplied by an
external capacitor connected to VREG.
The turn-on current for the high-side FET is similar in value to
that for the low-side FET, but is mainly supplied by the boot-
strap capacitor. However the bootstrap capacitor must then be
recharged from the VREG regulator output. Unfortunately the
bootstrap recharge can occur a very short time after the low-
side turn-on occurs. This requires that the value of the capacitor
connected between VREG and AGND should be high enough to
minimize the transient voltage drop on VREG for the combina-
tion of a low-side FET turn-on and a bootstrap capacitor recharge.
A value of 20 × C
BOOT
is a reasonable value. The maximum
working voltage will never exceed V
REG
, so the capacitor can be
rated as low as 15 V. This capacitor should be placed as close as
possible to the VREG pin.
Supply Decoupling
Because this is a switching circuit, there are current spikes from all
supplies at the switching points. As with all such circuits, the power
supply connections should be decoupled with a ceramic capacitor,
typically 100 nF, between the supply pin and ground. These capaci-
tors should be connected as close as possible to the device supply
pins VBB and V5, and the ground pin, GND.
Power Dissipation
In applications where a high ambient temperature is expected, the
on-chip power dissipation may become a critical factor. Careful
attention should be paid to ensure the operating conditions allow
the A3921 to remain in a safe range of junction temperature.
The power consumed by the A3921, P
D
, can be estimated by:
P
D
P
BIAS
+ P
CPUMP
+ P
SWITCHING
,
=
(7)
given:
P
BIAS
V
BB
× I
BB
;
=
(8)
Automotive Full Bridge MOSFET Driver
A3921
17
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
P
CPUMP
or
[( 2 V
BB
) – V
REG
] I
AV
, for V
BB
< 15 V,
=
[V
BB
V
REG
] I
AV
, for V
BB
15 V,
=
(9)
P
SWITCHING
Q
GATE
× V
REG
× N × f
PWM
× Ratio ;
=
(10)
where:
I
AV
Q
GATE
× N × f
PWM
,
=
N is the number of FETs switching during a PWM cycle, and
Ratio
R
GATE
+ 10
.
10
=
N = 1 for slow decay with diode recirculation, N = 2 for slow decay
with synchronous rectification or for fast decay with diode recir-
culation, and N = 4 for fast decay with synchronous rectification.
Layout Recommendations
Careful consideration must be given to PCB layout when design-
ing high frequency, fast switching, high current circuits. The
following are recommendations regarding some of these consid-
erations:
The A3921 ground, GND, and the high-current return of the
external FETs should return separately to the negative side
of the motor supply filtering capacitor. This will minimize
the effect of switching noise on the device logic and analog
reference.
The exposed thermal pad should be connected to the GND
pin and may form part of the Controller Supply ground (see
figure 4).
Minimize stray inductance by using short, wide copper traces at
the drain and source terminals of all power FETs. This includes
motor lead connections, the input power bus, and the common
source of the low-side power FETs. This will minimize voltages
induced by fast switching of large load currents.
Consider the use of small (100 nF) ceramic decoupling
capacitors across the sources and drains of the power FETs to
limit fast transient voltage spikes caused by the inductance of
the circuit trace.
Keep the gate discharge return connections Sx and LSS as short
as possible. Any inductance on these traces will cause negative
transitions on the corresponding A3921 pins, which may exceed
the absolute maximum ratings. If this is likely, consider the use
of clamping diodes to limit the negative excursion on these pins
with respect to GND.
Sensitive connections such as RDEAD and VDSTH, which
have very little ground current, should be connected to the Quiet
ground (refer to figure 4), which is connected independently,
closest to the GND pin. These sensitive components should
never be connected directly to the supply common or to a
common ground plane. They must be referenced directly to the
GND pin.
The supply decoupling for VBB, VREG, and V5 should
be connected to the Controller Supply ground, which is
independently connected close to the GND pin. The decoupling
capacitors should also be connected as close as practicable to
the relevant supply pin.
If layout space is limited, then the Quiet and Controller Supply
grounds may be combined. In this case, ensure that the ground
return of the dead time resistor is close to the GND pin.
Check the peak voltage excursion of the transients on the LSS
pin with reference to the GND pin, using a close grounded (tip
and barrel) probe. If the voltage at LSS exceeds the absolute
maximum shown in this datasheet, add either or both of
additional clamping and capacitance between the LSS pin and
the GND pin, as shown in figure 4.
Gate charge drive paths and gate discharge return paths may
carry a large transient current pulse. Therefore, the traces from
GHx, GLx, Sx, and LSS should be as short as possible to reduce
the circuit trace inductance.
Provide an independent connection from LSS to the common
point of the power bridge. It is not recommended to connect
LSS directly to the GND pin, as this may inject noise into
sensitive functions such as the timer for dead time.
A low-cost diode can be placed in the connection to VBB to
provide reverse battery protection. In reverse battery conditions,
it is possible to use the body diodes of the power FETs to clamp
the reverse voltage to approximately 4 V. In this case, the
additional diode in the VBB connection will prevent damage
to the A3921 and the VDRAIN input will survive the
reverse voltage.
Note that the above are only recommendations. Each application
is different and may encounter different sensitivities. A driver
running a few amps will be less susceptible than one running with
150 A, and each design should be tested at the maximum current
to ensure any parasitic effects are eliminated.
Automotive Full Bridge MOSFET Driver
A3921
18
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Figure 4. Supply routing suggestions
SA
GHA
GLA
LSS
Supply
Common
+ Supply
Moto
r
VBB
VREG
VS
VDSTH
RDEAD
Quiet Ground
Controller Supply Ground
Power Ground
A3921
GHB
GLB
SB
VDRAIN
Optional components
to limit LSS transients
R
S
GND
Optional reverse
battery protection
VDRAIN
19 V
19 V
20 V
VBB
VBB
18 V
18 V
18 V
VS
6 V
CP1
18 V
CP2
1 kΩ
8.5 V
PWMx
SR
PHASE
3 kΩ
ESD
RESET
3 kΩ
6 V 6 V
50 kΩ
8.5 V
VDSTH
ESD
RDEAD
100 Ω
8.5 V
1.2 V
ESD
ESD
FFx
ESD
10 Ω
Cx
18 V
GHx
Sx
GLx
LSS
20 V
18 V
18 V
VREG
Input and Output Structures
(A) Gate drive outputs
(B) Supply protection structures
(C) Fault output
(D) RESET input
(E) Logic inputs, no pulldown
(G) RDEAD
(F) V
DS
monitor threshold input

A3921KLPTR-T

Mfr. #:
Manufacturer:
Description:
IC FULL BRIDGE CTLR 28TSSOP
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