Automotive Full Bridge MOSFET Driver
A3921
7
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
The A3921 is a full-bridge MOSFET driver (pre-driver) requiring
a single unregulated supply of 7 to 50 V. It includes an integrated
5 V logic supply regulator.
The four high current gate drives are capable of driving a wide
range of N-channel power MOSFETs, and are configured as two
high-side drives and two low-side drives. The A3921 provides
all the necessary circuits to ensure that the gate-source voltage
of both high-side and low-side external FETs are above 10 V, at
supply voltages down to 7 V. For extreme battery voltage drop
conditions, correct functional operation is guaranteed at supply
voltages down to 5.5 V, but with a reduced gate drive voltage.
The A3921 can be driven with a single PWM input from a
microcontroller and can be configured for fast or slow decay.
Fast decay can provide four-quadrant motor control, while slow
decay is suitable for two-quadrant motor control or simple induc-
tive loads. In slow decay, current recirculation can be through
the high-side or the low-side MOSFETs. In either case, bridge
efficiency can be enhanced by synchronous rectification. Cross-
conduction (shoot through) in the external bridge is avoided by
an adjustable dead time.
A low power sleep mode allows the A3921, the power bridge, and
the load to remain connected to a vehicle battery supply without
the need for an additional supply switch.
The A3921 includes a number of protection features against
undervoltage, overtemperature, and power bridge faults. Fault
states enable responses by the device or by the external control-
ler, depending on the fault condition and logic settings. Two fault
flag outputs, FF1 and FF2, are provided to signal detected faults
to an external controller.
Power Supplies
A single power supply connection is required to the VBB pin
through a reverse voltage protection circuit. The supply should be
decoupled with a ceramic capacitor connected close to the VBB
and ground pins.
The A3921 operates within specified parameters with a VBB
supply from 7 to 50 V and functions correctly with a supply down
to 5.5 V. This provides a very rugged solution for use in the harsh
automotive environment.
V5 Pin A 5 V low current supply for external pullup resistors is
provided by an integrated 5 V regulator. This regulator is also
used by the internal logic circuits and must always be decoupled
by at least a 100 nF capacitor between the V5 pin and GND. The
5 V regulator is disabled when RESET is held low.
Gate Drives
The A3921 is designed to drive external, low on-resistance,
power N-channel MOSFETs. It supplies the large transient cur-
rents necessary to quickly charge and discharge the external FET
gate capacitance in order to reduce dissipation in the external
FET during switching. The charge and discharge rate can be
controlled using an external resistor in series with the connection
to the gate of the FET.
Gate Drive Voltage Regulation The gate drives are powered by
an internal regulator which limits the supply to the drives and
therefore the maximum gate voltage. When the V
BB
supply is
greater than about 16 V, the regulator is a simple linear regulator.
Below 16 V, the regulated supply is maintained by a charge pump
boost converter, which requires a pump capacitor connected
between the CP1 and CP2 pins. This capacitor must have a mini-
mum value of 220 nF, and is typically 470 nF.
The regulated voltage, nominally 13 V, is available on the VREG
pin. A sufficiently large storage capacitor must be connected to
this pin to provide the transient charging current to the low-side
drives and the bootstrap capacitors.
Top-off Charge Pump An additional top-off charge pump is
provided for each phase. The charge pumps allow the high-side
drives to maintain the gate voltage on the external FETs indefi-
nitely, ensuring so-called 100% PWM if required. This is a low
current trickle charge pump, and is operated only after a high-side
FET has been signaled to turn on. The floating high-side gate
drive requires a small bias current (<20 μA) to maintain the high-
level output. Without the top-off charge pump, this bias current
would be drawn from the bootstrap capacitor through the Cx pin.
The charge pump provides sufficient current to ensure that the
bootstrap voltage and thereby the gate-source voltage is main-
tained at the necessary level.
Note that the charge required for initial turn-on of the high-side
gate is always supplied by the bootstrap capacitor. If the bootstrap
capacitor becomes discharged, the top-off charge pump will not
provide sufficient current to allow the FET to turn on.
Functional Description
Automotive Full Bridge MOSFET Driver
A3921
8
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
In some applications a safety resistor is added between the gate
and source of each FET in the bridge. When a high-side FET is
held in the on-state, the current through the associated high-side
gate-source resistor (R
GSH
) is provided by the high-side drive and
therefore appears as a static resistive load on the top-off charge
pump. The minimum value of R
GSH
for which the top-off charge
pump can provide current is shown in the Electrical Characteris-
tics table.
GLA and GLB Pins These are the low-side gate drive outputs for
the external N-channel MOSFETs. External resistors between the
gate drive output and the gate connection to the FET (as close as
possible to the FET) can be used to control the slew rate seen at
the gate, thereby providing some control of the di/dt and dv/dt of
the SA and SB outputs. GLx going high turns on the upper half of
the drive, sourcing current to the gate of the low-side FET in the
external power bridge, turning it on. GLx going low turns on the
lower half of the drive, sinking current from the external FET gate
circuit to the LSS pin, turning off the FET.
SA and SB Pins Directly connected to the motor, these terminals
sense the voltages switched across the load. These terminals are
also connected to the negative side of the bootstrap capacitors
and are the negative supply connections for the floating high-side
drives. The discharge current from the high-side FET gate capaci-
tance flows through these connections, which should have low
impedance circuit connections to the FET bridge.
GHA and GHB Pins These terminals are the high-side gate
drive outputs for the external N-channel FETs. External resistors
between the gate drive output and the gate connection to the FET
(as close as possible to the FET) can be used to control the slew
rate seen at the gate, thereby controlling the di/dt and dv/dt of the
SA and SB outputs. GHx going high turns on the upper half of
the drive, sourcing current to the gate of the high-side FET in the
external motor-driving bridge, turning it on. GHx going low turns
on the lower half of the drive, sinking current from the external
FET gate circuit to the corresponding Sx pin, turning off the FET.
CA and CB Pins These are the high-side connections for the
bootstrap capacitors and are the positive supply for the high-side
gate drives. The bootstrap capacitors are charged to approxi-
mately V
REG
when the associated output Sx terminal is low.
When the Sx output swings high, the charge on the bootstrap
capacitor causes the voltage at the corresponding Cx terminal to
rise with the output to provide the boosted gate voltage needed
for the high-side FETs.
LSS Pin This is the low-side return path for discharge of the
capacitance on the FET gates. It should be tied directly to the
common sources of the low-side external FETs through an inde-
pendent low impedance connection.
RDEAD Pin This pin controls internal generation of dead time
during FET switching.
When a resistor greater than 3 kΩ is connected between
RDEAD and AGND, cross-conduction is prevented by the gate
drive circuits, which introduce a dead time, t
DEAD
, between
switching one FET off and the complementary FET on. The
dead time is derived from the resistor value connected between
the RDEAD and AGND pins.
• When RDEAD is connected directly to V5, cross-conduction is
prevented by the gate drive circuits. In this case, t
DEAD
defaults
to a value of 6 μs typical.
Logic Control Inputs
Four low-voltage level digital inputs provide control for the
gate drives. These logic inputs all have a nominal hysteresis of
500 mV to improve noise performance. They are used together
to provide fast decay or slow decay with high-side or low-side
recirculation. They also provide brake, coast, and sleep modes as
defined in tables 1 and 2.
PWMH and PWML Pins These inputs can be used to control
current in the power bridge. PWMH provides high-side chopping
and PWML provides low-side chopping. When used together
they control the power bridge in fast decay mode. The PWM
options are provided in table 2.
Setting PWMH low turns off active high-side drives. This
provides high-side–chopped slow-decay PWM.
Setting PWML low turns off active low-side drives. This
provides low-side–chopped slow-decay PWM.
• PWMH and PWML may also be connected together and driven
with a single PWM signal. This provides fast-decay PWM.
PHASE Pin The state of the PHASE pin determines the positive
direction of load current (see table 1). The PHASE pin can also
be used as a PWM input when full four-quadrant control (fast
decay synchronous rectification) is required (see table 2).
SR Pin This enables or disables synchronous rectification. When
SR is high, synchronous rectification is enabled during the PWM
off time. PWM off time is present when there is a low on either
Automotive Full Bridge MOSFET Driver
A3921
9
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Table 1. Phase Control Truth Table
Inputs Outputs Bridge
Mode of Operation
PWMH PWML PHASE SR GHA GLA GHB GLB SA SB
1 1 1 X H L L H HS LS Bridge driven with A high and B low
1 1 0 X L H H L LS HS Bridge driven with B high and A low
0 1 X 1 L H L H LS LS Slow decay, both low-side on or low-side brake
1 0 X 1 H L H L HS HS Slow decay, both high-side on or high-side brake
0 1 1 0 L L L H Z LS Slow decay, current flow A to B, low-side diode rectification
0 1 0 0 L H L L LS Z Slow decay, current flow B to A, low-side diode rectification
1 0 1 0 H L L L HS Z Slow decay, current flow A to B, high-side diode rectification
1 0 0 0 L L H L Z HS Slow decay, current flow B to A, high-side diode rectification
0 0 X XLLLLZZFast decay, diode rectification/coast
X = don’t care (same for input 1 or input 0), HS = high-side FET active, LS = low-side FET active, Z = high impedance, both FETs off
Table 2. PWM Options
Inputs
a
PWM Effect
b
Decay Mode of Operation
SR PWMH PWML PHASE 100% 0%
X 1 1 PWM A to B B to A Fast Full four-quadrant control, zero average load current at 50% PWM
0 PWM PWM
1 A to B
Coast Fast Fast decay, diode recirculation or coast
0 B to A
1 PWM 1
1 A to B
Brake Slow High-side PWM, low-side MOSFET recirculation
0 B to A
1 1 PWM
1 A to B
Brake Slow Low-side PWM, high-side MOSFET recirculation
0 B to A
0 PWM 1
1 A to B
Brake
c
Slow High-side PWM, low-side diode recirculation
0 B to A
0 1 PWM
1 A to B
Brake
c
Slow Low-side PWM, high-side diode recirculation
0 B to A
X 0 0 X Coast Coast Fast Coast, all MOSFETs off
a
X indicates don’t care condition. The action is the same for input 1 or input 0.
b
PWM Effect indicates the effect on the load current direction or the equivalent action.
c
With SR disabled, braking is only effective in one direction when sufficient forward voltage is available to allow the diode to conduct.

A3921KLPTR-T

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IC FULL BRIDGE CTLR 28TSSOP
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