Automotive Full Bridge MOSFET Driver
A3921
4
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Supply and Reference
Load Supply Voltage Functional
Operating Range
1
V
BB
5.5 50 V
Load Supply Quiescent Current
I
BBQ
RESET = high, outputs = low, V
BB
= 12 V 10 14 mA
I
BBS
RESET = low, Sleep mode, V
BB
= 12 V 10 μA
VREG Output Voltage V
REG
V
BB
> 9 V, I
REG
= 0 to 10 mA 12.5 13 13.75 V
7.5 V < V
BB
9 V, I
REG
= 0 to 7 mA 12.5 13 13.75 V
6 V < V
BB
7.5 V, I
REG
= 0 to 7 mA
2×V
BB
– 2.5
––V
5.5 V < V
BB
6 V, I
REG
< 5.5 mA 8.5 9.5 V
V5 Output Voltage V
5(out)
No load 4.5 5 5.5 V
V5 Line Regulation V
5(line)
I
5
= –2 mA 15 40 mV
V5 Load Regulation V
5(load)
I
5
= 0 to –2 mA 50 100 mV
V5 Short-Circuit Current I
5M
V
BB
= 40 V, V
5
= 0 V 28 35 mA
Bootstrap Diode Forward Voltage V
fBOOT
I
D
= 10 mA 0.4 0.7 1.0 V
I
D
= 100 mA 1.5 2.2 2.8 V
Bootstrap Diode Resistance r
D
r
D(100mA)
=
(V
fBOOT(150mA)
– V
fBOOT(50mA)
) / 100 mA
61020Ω
Bootstrap Diode Current Limit I
DBOOT
250 500 750 mA
Top-off Charge Pump Current Limit I
TOCPM
400 μA
High-Side Gate Drive Static Load Resistance R
GSH
250 kΩ
Gate Output Drive
Turn-On Time t
r
C
LOAD
= 1 nF, 20% to 80% 35 ns
Turn-Off Time t
f
C
LOAD
= 1 nF, 80% to 20% 20 ns
Pullup On Resistance R
DS(on)UP
T
J
= 25°C, I
GHx
= –150 mA 6 8 12 Ω
T
J
= 150°C, I
GHx
= –150 mA 10 13 16 Ω
Pulldown On Resistance R
DS(on)DN
T
J
= 25°C, I
GLx
= 150 mA 2 3 4 Ω
T
J
= 150°C, I
GLx
= 150 mA 3 4.5 6 Ω
GHx Output Voltage V
GHX
Bootstrap capacitor fully charged
V
Cx
– 0.2
––V
GLx Output Voltage V
GLX
V
REG
– 0.2
––V
Turn-Off Propagation Delay
2
t
P(off)
Input change to unloaded gate output
change
60 90 150 ns
Turn-On Propagation Delay
2
t
P(on)
Input change to unloaded gate output
change
60 90 150 ns
Propagation Delay Matching, Phase-to-Phase t
PP
Measured between corresponding
transition points on both phases
–10–ns
Propagation Delay Matching, On-to-Off t
OO
Measured across one phase 10 ns
ELECTRICAL CHARACTERISTICS valid at T
J
= –40°C to 150°C, V
BB
= 7 to 50 V, unless noted otherwise
Continued on the next page…
Automotive Full Bridge MOSFET Driver
A3921
5
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Gate Output Drive (continued)
Dead Time
2
t
DEAD
R
DEAD
= 3 kΩ 180 ns
R
DEAD
= 30 kΩ 815 960 1110 ns
R
DEAD
= 240 kΩ 3.5 μs
RDEAD tied to V5 6 μs
Logic Inputs and Outputs
FF1 and FF2 Fault Output (Open Drain) V
FF(L)
I
FF
= 1 mA, fault not present 0.4 V
FF1 and FF2 Fault Output Leakage Current
3
I
FF(H)
V
FF
= 5 V, fault present –1 1 μA
RDEAD Current
3
I
DEAD
RDEAD = GND –200 –70 μA
Input Low Voltage V
IN(L)
0.8 V
Input High Voltage V
IN(H)
2.0 V
Input Hysteresis (Except RESET Pin) V
INhys
100 250 mV
Input Hysteresis (RESET Pin) V
INRSThys
200 mV
Input Current (Except RESET Pin)
3
I
IN
0 V < V
IN
< V
5
–1 1 μA
Input Pulldown Resistor (RESET Pin) R
PD
–50–kΩ
RESET Pulse Time t
RES
0.1 3.5 μs
Protection
VREG Undervoltage Lockout Threshold
V
REGUVon
V
REG
rising 7.5 8 8.5 V
V
REGUVoff
V
REG
falling 6.75 7.25 7.75 V
Bootstrap Undervoltage Threshold V
BOOTUV
Cx with respect to Sx 59 69 %V
REG
Bootstrap Undervoltage Hysteresis V
BOOTUVhys
–13–%V
REG
V5 Undervoltage Turn-Off Threshold V
5UVoff
V
5
falling 3.4 3.6 3.8 V
V5 Undervoltage Hysteresis V
5UVhys
300 400 500 mV
VDSTH Input Range V
DSTH
0.1 2 V
VDSTH Input Current I
DSTH
0 V < V
DSTH
< 2 V 10 30 μA
VDSTH Disable Voltage V
DSDIS
When not connected directly to V5 4.95 V
VDRAIN Input Voltage V
DRAIN
V
DSTH
= 2 V, V
BB
= 12 V, 7 V
BB
50 V
VDRAIN Input Current I
DRAIN
V
DSTH
= 2 V, V
BB
= 12 V,
0 V < V
DRAIN
< V
BB
250 μA
Short-to-Ground Threshold Offset
4
V
STGO
High-side on, V
DSTH
1 V ±100 mV
High-side on, V
DSTH
< 1 V –150 ±50 150 mV
Short-to-Battery Threshold Offset
5
V
STBO
Low-side on, V
DSTH
1 V ±100 mV
Low-side on, V
DSTH
< 1 V –150 ±50 150 mV
Overtemperature Fault Flag Threshold T
JF
Temperature increasing 150 170 ºC
Overtemperature Fault Hysteresis T
JFhys
Recovery = T
JF
– T
JFhys
–15–ºC
1
Functions correctly, but parameters are not guaranteed, below the general limits (7 V).
2
See Gate Drive Timing diagrams.
3
For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin.
4
As V
Sx
decreases, fault occurs if V
BAT
–V
Sx
> V
STG
. STG threshold, V
STG
= V
DSTH
+ V
STGO
.
5
As V
Sx
increases, fault occurs if V
Sx
– V
LSS
> V
STB
. STB threshold, V
STB
= V
DSTH
+V
STBO
.
ELECTRICAL CHARACTERISTICS (continued) valid at T
J
= –40°C to 150°C, V
BB
= 7 to 50 V, unless noted otherwise
Automotive Full Bridge MOSFET Driver
A3921
6
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
PHASE
GL
A
GH
A
t
DEAD
t
DEAD
t
P(off)
t
P(off)
PWML=1, PWMH=1
GHB
GLB
PWMH
GLA
GHA
t
P(off)
t
P(on)
PHASE=1
GHB
GLB
PWML
PWMH
GLx
GHx
t
P(off)
t
P(on)
SR=0, PWML=1
PWML
GLx
GHx
t
P(on)
t
P(off)
SR=0, PWMH=1
PWMH
GLx
GHx
t
DEAD
t
DEAD
t
P(off)
t
P(off)
SR=1, PWML=1
PWML
GLx
GHx
t
DEAD
t
P(off)
t
DEAD
t
P(off)
SR=1, PWMH=1
Timing Diagrams
Gate Drive Timing – PWM inputs, Slow Decay, Synchronous Rectification
Gate Drive Timing – PWM inputs, Slow Decay, Diode Rectification
Gate Drive Timing – Phase Input, Fast Decay,
Synchronous Rectification
Gate Drive Timing – PWM Input, Fast Decay,
Diode Rectification

A3921KLPTR-T

Mfr. #:
Manufacturer:
Description:
IC FULL BRIDGE CTLR 28TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
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