P89LPC9331_9341_9351_9361 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5.1 — 20 August 2012 55 of 94
NXP Semiconductors
P89LPC9331/9341/9351/9361
8-bit microcontroller with accelerated two-clock 80C51 core
7.29.3 Data EEPROM (P89LPC9351/9361)
The P89LPC9351/9361 has 512 bytes of on-chip Data EEPROM. The Data EEPROM is
SFR based, byte readable, byte writable, and erasable (via row fill and sector fill). The
user can read, write and fill the memory via SFRs and one interrupt. This Data EEPROM
provides 100,000 minimum erase/program cycles for each byte.
• Byte mode: In this mode, data can be read and written one byte at a time.
• Row fill: In this mode, the addressed row (64 bytes) is filled with a single value. The
entire row can be erased by writing 00H.
• Sector fill: In this mode, all 512 bytes are filled with a single value. The entire sector
can be erased by writing 00H.
After the operation finishes, the hardware will set the EEIF bit, which if enabled will
generate an interrupt. The flag is cleared by software.
Remark: When voltage supply is lower than 2.4 V, the BOD EEPROM is tripped and Data
EEPROM program or erase is blocked. EWERR1 and EWERR0 bits are used to indicate
the write error for BOD EEPROM. Both can be cleared by power-on reset, watchdog reset
or software write.
7.30 Flash program memory
7.30.1 General description
The P89LPC9331/9341/9351/9361 flash memory provides in-circuit electrical erasure and
programming. The flash can be erased, read, and written as bytes. The Sector and Page
Erase functions can erase any flash sector (1 kB) or page (64 bytes). The Chip Erase
operation will erase the entire program memory. ICP using standard commercial
programmers is available. In addition, IAP and byte-erase allows code memory to be used
for non-volatile data storage. On-chip erase and write timing generation contribute to a
user-friendly programming interface. The P89LPC9331/9341/9351/9361 flash reliably
stores memory contents even after 100,000 erase and program cycles. The cell is
designed to optimize the erase and programming mechanisms. The
P89LPC9331/9341/9351/9361 uses V
DD
as the supply voltage to perform the
Program/Erase algorithms. When voltage supply is lower than 2.4 V, the BOD FLASH is
tripped and flash erase/program is blocked.
7.30.2 Features
• Programming and erase over the full operating voltage range.
• Byte erase allows code memory to be used for data storage.
• Read/Programming/Erase using ISP/IAP/ICP.
• Internal fixed boot ROM, containing low-level IAP routines available to user code.
• Default loader providing ISP via the serial port, located in upper end of user program
memory.
• Boot vector allows user-provided flash loader code to reside anywhere in the flash
memory space, providing flexibility to the user.
• Any flash program/erase operation in 2 ms.
• Programming with industry-standard commercial programmers.
