Figure 12. Fast Read Operation Timing Diagram
nCS
DCLK
DATA0
DATA1
nCS
DCLK
DATA0
DATA1
0 1 2 3 4 5 6 7 8 9 10 36 37 38 39
Operation Code (Bh)
Dummy Cycle(s)
32-Bit Address
MSB
MSB MSB MSB
High Impedance
31 30 29 3 2 1 0
DATA Out 1 DATA Out 2
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
7 6 5 4 3 2 1 0
The first byte address can be at any location. The device automatically increases the
address to the next higher address after shifting out each byte of data. When the
device reaches the highest address, the address counter restarts at the beginning of
the same die, allowing the read sequence to continue indefinitely. A complete device
reading is done by executing the read operation:
two times for EPCQ-L512 devices
four times for EPCQ-L1024 devices
You can terminate the fast read operation by driving the nCS signal high at any time
during data output. If the fast read operation is shifted in while an erase, program, or
write cycle is in progress, the operation is not executed and does not affect the erase,
program, or write cycle in progress.
Extended Quad Input Fast Read Operation (EBh)
This operation is similar to the fast read operation except that the data and addresses
are shifted in and out on the DATA0, DATA1, DATA2, and DATA3 pins.
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25
Figure 13. Extended Quad Input Fast Read Operation Timing Diagram
2
11 12
13
14
0
DATA0
DCLK
Operating Code (EBh)
15 16
29
26
27
28
12 8
4 0
5 1
6 2
7 3
28 24
4
31
30
32
13 9
29 25
DATA1
Don’t Care
Byte 1
5
7
15 11
31 27
6
14 10
20 16
21 17
22 18
23 19
30 26
DATA2
Don’t Care
Byte 2
Dummy Cycles
32-Bit Address
DATA3
‘1’
I/O Switches from Input to Output
1 3
64
5
7
10
8
9
4 0
4
0
5
1
5
1
6 2
6
2
7 3
7
3
nCS
When the device reaches the highest address, the address counter restarts at the
beginning of the same die, allowing the read sequence to continue indefinitely. A
complete device reading is done by executing the read operation:
two times for EPCQ-L512 devices
four times for EPCQ-L1024 devices
Read Device Identification Operation (9Eh or 9Fh)
This operation reads the 8-bit device identification of the EPCQ-L device from the
DATA1 output pin. If this operation is shifted in while an erase or write cycle is in
progress, the operation is not executed and does not affect the erase or write cycle in
progress.
Table 25. EPCQ-L Device Identification
EPCQ-L Device Silicon ID (Binary Value)
EPCQ-L256 b'0001 1001
EPCQ-L512 b'0010 0000
EPCQ-L1024 b'0010 0001
The 8-bit device identification of the EPCQ-L device is shifted out on the DATA1 pin on
the falling edge of the DCLK signal. LSB is first shifted into the FPGA device.
Figure 14. Read Device Identification Operation Timing Diagram
nCS
DCLK
DATA0
DATA1
0 1 2 3 4 5 6 7 8 9 10 20 21 23 24 25 26 27 28 29 30 31 32
Operation Code (9Fh) Two Dummy Cycles
15
14 13
Dont’t Care
3 2 1 0
7 6 5 4 3 2 1 0
MSB
MSB
High Impedance
Silicon ID
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26
Write Bytes Operation (02h)
This operation allows bytes to be written to the memory. You must execute the write
enable operation before the write bytes operation. After the write bytes operation is
completed, the write enable latch bit in the status register is set to 0.
When you execute the write bytes operation, you shift in the write bytes operation
code, followed by a 4-byte addressing mode (A[31..0]), and at least one data byte
on the DATA0 pin. If the eight LSBs (A[7..0]) are not all 0, all sent data that goes
beyond the end of the current page is not written into the next page. Instead, this
data is written at the start address of the same page. You must ensure the nCS signal
is set low during the entire write bytes operation.
The following figure shows the operation sequence of the write bytes operation.
Figure 15. Write Bytes Operation Timing Diagram
DATA0
Operation Code (02h)
32-Bit Address
Data Byte 1 Data Byte 2 Data Byte 256
0
1
2
3
4
5
6
7 8 9 10 36
37
38
39
40
nCS
DCLK
41 42 43 44 45 46
47
48
49
50 51
52
53
54
55
3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 031 30 29 7 6 5 4 3 2 1 0
2072
2073
2074 2075
2076
2077
2078
2079
MSB MSB MSB MSB
If more than 256 data bytes are shifted into the EPCQ-L device with a write bytes
operation, the previously latched data is discarded and the last 256 bytes are written
to the page. However, if less than 256 data bytes are shifted into the EPCQ-L device,
they are guaranteed to be written at the specified addresses and the other bytes of
the same page are not affected.
The device initiates a self-timed write cycle immediately after the nCS signal is driven
high. For details about the self-timed write cycle time, refer to t
WB
in Table 26 on page
30. You must account for this amount of delay before another page of memory is
written. Alternatively, you can check the write in progress bit in the status register by
executing the read status operation while the self-timed write cycle is in progress. The
write in progress bit is set to 1 during the self-timed write cycle and 0 when it is
complete.
Note: You must erase all the memory bytes of EPCQ-L devices before you implement the
write bytes operation. You can erase all the memory bytes by executing the erase
sector operation in a sector or the erase bulk or erase die operation throughout the
entire memory.
Extended Quad Input Fast Write Bytes Operation (12h)
This operation is similar to the write bytes operation except that the data and
addresses are shifted in on the DATA0, DATA1, DATA2, and DATA3 pins.
The following figure shows the operation sequence of the extended quad input fast
write bytes operation.
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EPCQ-L Serial Configuration Devices Datasheet
27

EPCQL1024F24IN

Mfr. #:
Manufacturer:
Intel / Altera
Description:
FPGA - Configuration Memory
Lifecycle:
New from this manufacturer.
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