NCP81119
http://onsemi.com
8
ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −10°C < T
A
< 100°C; V
CC
= 5 V; C
VCC
= 0.1 mF
Parameter UnitMaxTypMinTest Conditions
VR12.5 DAC
System Voltage Accuracy
(−10°C − + 85°C)
1.5 V ≤ DAC < 2.3 V
1.0 V< DAC < 1.49 V
0.5 V <DAC < 0.99 V
−0.5
−8
−10
0.5
8
+10
%
mV
mV
OVERCURRENT PROTECTION
ILIM Threshold Current (OCP shutdown after 50 ms
delay)
(PS0) Rlim = 20k 9.0 10 11.0
mA
ILIM Threshold Current (immediate OCP shutdown) (PS0) Rlim = 20k 13.5 15 16.5
mA
ILIM Threshold Current (OCP shutdown after 50 ms
delay)
(PS1, PS2, PS3) Rlim = 20k,
N = number of phases in PS0 mode
10/N
mA
ILIM Threshold Current (immediate OCP shutdown) (PS1, PS2, PS3) Rlim = 20k,
N = number of phases in PS0 mode
15/N
mA
MODULATORS (PWM Comparators)
0% Duty Cycle
COMP voltage when the PWM
outputs remain LO
1.3 V
100% Duty Cycle COMP voltage when the PWM
outputs remain HI VRMP = 12.0 V
2.5 V
PWM Ramp Duty Cycle Matching COMP = 2 V, PWM Ton matching 1 %
PWM Phase Angle Error Between adjacent phases at 25° 5 deg
Ramp Feed−forward Voltage range 5 20 V
VR_HOT#
Output Low Voltage
I_VRHOT = −4 mA 0.3 V
Output Leakage Current High Impedance State −1.0 1.0
mA
TSENSE
Alert# Assert Threshold
491 mV
Alert# De−assert Threshold 513 mV
VRHOT Assert Threshold 472 mV
VRHOT Rising Threshold 494 mV
TSENSE Bias Current 115 120 125
mA
ADC
Voltage Range
0 2 V
Total Unadjusted Error (TUE) −1 +1 %
Differential Nonlinearity (DNL) 8−bit 1 LSB
Power Supply Sensitivity ±1 %
Conversion Time 30
ms
Round Robin 90
ms
VR_RDY, (Power Good) OUTPUT
Output Low Saturation Voltage
I
VR_RDY
= 4 mA 0.3 V
Rise Time
External pull−up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 10% to 90%
100 ns
Fall Time
External pull−up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 90% to 10%
10 ns
Output Voltage at Power−up
VR_RDY pulled up to 5 V via 2 kW
1.0 V
3. Guaranteed by design or characterization data, not in production test.
