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NCP5331FTR2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36
NCP5331
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4
MAXIMUM RATINGS*
Rating Value Unit
Operating Junction Temperature 150 °C
Lead Temperature Soldering
SMD Reflow Profile (60 seconds maximum)
230
183
°C peak
°C
Storage Temperature Range −65 to 150 °C
Package Thermal Resistance: Junction−to−Ambient, R
JA
52 °C/W
ESD Susceptibility (Human Body Model) 2.0 kV
JEDEC Moisture Sensitivity TBD −
*The maximum package power dissipation must be observed.
MAXIMUM RATINGS
Pin Symbol V
MAX
V
MIN
I
SOURCE
I
SINK
COMP 6.0 V −0.3 V 1.0 mA 1.0 mA
V
FB
6.0 V −0.3 V 1.0 mA 1.0 mA
V
DRP
6.0 V −0.3 V 1.0 mA 1.0 mA
CS1, CS2 6.0 V −0.3 V 1.0 mA 1.0 mA
CS
REF
6.0 V −0.3 V 1.0 mA 1.0 mA
R
OSC
6.0 V −0.3 V 1.0 mA 1.0 mA
PGD 6.0 V −0.3 V 1.0 mA 8.0 mA
VID Pins 6.0 V −0.3 V 1.0 mA 1.0 mA
I
LIM
6.0 V −0.3 V 1.0 mA 1.0 mA
5 V
REF
6.0 V −0.3 V 1.0 mA 20 mA
CB
OUT
13.2 V −0.3 V 1.0 mA 4.0 mA
C
PGD
6.0 V −0.3 V 1.0 mA 1.0 mA
C
OVC
6.0 V −0.3 V 1.0 mA 1.0 mA
V
CCL
16 V −0.3 V N/A 50 mA
V
CCH
20 V −0.3 V N/A 1.5 A for 1.0 s,
200 mA dc
V
CCLx
16 V −0.3 V N/A 1.5 A for 1.0 s,
200 mA dc
5 V
SB
6.0 V −0.3 V N/A 1.0 mA
GHx 20 V −2.0 V for 100 ns,
−0.3 V dc
1.5 A for 1.0 s,
200 mA dc
1.5 A for 1.0 s,
200 mA dc
GLx 16 V −2.0 V for 100 ns,
−0.3 V dc
1.5 A for 1.0 s,
200 mA dc
1.5 A for 1.0 s,
200 mA dc
GND1, GND2 0.3 V −0.3 V 2.0 A for 1.0 s,
200 mA dc
N/A
LGND 0 V 0 V 50 mA N/A
−SEN 0.3 V −0.3 V 1.0 mA 1.0 mA
NCP5331
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5
ELECTRICAL CHARACTERISTICS (0°C < T
A
< 70°C; 0°C < T
J
< 125°C; 9.0 V < V
CCL
< 16 V; 9.0 V < V
CCH
< 20 V;
9.0 V < V
CCL1
= V
CCL2
< 14 V; C
GATE
= 3.3 nF, R
ROSC
= 32.4 k, C
COMP
= 1.0 nF, C
5V(REF)
= 0.1 F, DAC Code 01110 (1.2 V),
C
VCC
= 1.0 F, 0.25 V ≤ I
LIM
≤ 1.0 V; unless otherwise noted)
Characteristic
Test Conditions Min Typ Max Unit
Voltage Identification DAC
Voltage Identification (VID) Codes
Measure V = COMP SEN = LGND
V
ID4
V
ID3
V
ID2
V
ID1
V
ID0
Measure V
FB
= COMP, −SEN = LGND
0 0 0 0 0 − − 1.550 − V
0 0 0 0 1 − − 1.525 − V
0 0 0 1 0 − − 1.500 − V
0 0 0 1 1 − − 1.475 − V
0 0 1 0 0 − − 1.450 − V
0 0 1 0 1 − − 1.425 − V
0 0 1 1 0 − − 1.400 − V
0 0 1 1 1 − − 1.375 − V
0 1 0 0 0 − − 1.350 − V
0 1 0 0 1 − − 1.325 − V
0 1 0 1 0 − − 1.300 − V
0 1 0 1 1 − − 1.275 − V
0 1 1 0 0 − − 1.250 − V
0 1 1 0 1 − − 1.225 − V
0 1 1 1 0 − − 1.200 − V
0 1 1 1 1 − − 1.175 − V
1 0 0 0 0 − − 1.150 − V
1 0 0 0 1 − − 1.125 − V
1 0 0 1 0 − − 1.100 − V
1 0 0 1 1 − − 1.075 − V
1 0 1 0 0 − − 1.050 − V
1 0 1 0 1 − − 1.025 − V
1 0 1 1 0 − − 1.000 − V
1 0 1 1 1 − − 0.975 − V
1 1 0 0 0 − − 0.950 − V
1 1 0 0 1 − − 0.925 − V
1 1 0 1 0 − − 0.900 − V
1 1 0 1 1 − − 0.875 − V
1 1 1 0 0 − − 0.850 − V
1 1 1 0 1 − − 0.825 − V
1 1 1 1 0 − − 0.800 − V
1 1 1 1 1 − Shutdown V
System Accuracy Percent deviation from programmed VID codes −0.8 − 0.8 %
Shutdown Time Delay VID = 11111 5.0 10 15 s
Input Threshold V
ID0
−V
ID4
1.00 1.25 1.50 V
VID Pin Bias Current V
ID0
−V
ID4
12 25 40 A
VID Pin Clamp Voltage − − 2.3 2.6 V
NCP5331
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6
ELECTRICAL CHARACTERISTICS (continued) (0°C < T
A
< 70°C; 0°C < T
J
< 125°C; 9.0 V < V
CCL
< 16 V; 9.0 V < V
CCH
< 20 V;
9.0 V < V
CCL1
= V
CCL2
< 14 V; C
GATE
= 3.3 nF, R
ROSC
= 32.4 k, C
COMP
= 1.0 nF, C
5V(REF)
= 0.1 F, DAC Code 01110 (1.2 V),
C
VCC
= 1.0 F, 0.25 V ≤ I
LIM
≤ 1.0 V; unless otherwise noted)
Characteristic
Test Conditions Min Typ Max Unit
Voltage Identification DAC (continued)
−SEN Bias Current LGND < 55 mV, All DAC Codes 40 80 120 A
−SEN Offset from GND − −150 − 200 mV
Power Good Output
Internal Delay Time
− 175 290 425 s
PWRGD Low Output Voltage I
PGD
= 4.0 mA − 250 400 mV
Output Leakage Current V
PGD
= 5.5 V − 0.1 2.0 A
V
CORE
/CS
REF
Comparator
Threshold Voltage
Tolerance from DAC Setting −15% −12.5% −10% %
C
PGD
Charge Current R
OSC
= 32.4 k 14.5 16 17.5 A
C
PGD
Comparator Threshold
Voltage
− 2.8 3.0 3.2 V
C
PGD
External Delay Time C
PGD
= 0.033 F. Note 1. 4.8 6.0 7.8 ms
Voltage Feedback Error Amplifier
V
FB
Bias Current
0.7 V < V
FB
< 1.6 V. Note 2.
9.4 10.3 11.1 A
COMP Source Current
COMP = 0.5 V to 2.0 V; V
FB
= 0.8 V
15 30 60 A
COMP Sink Current
COMP = 0.5 V to 2.0 V; V
FB
= 1.5 V
15 30 60 A
COMP Discharge Threshold
Voltage
− 0.20 0.33 0.40 V
Transconductance
−10 A < I
COMP
< +10 A
− 32 − mmho
Output Impedance − − 2.5 − M
Open Loop Dc Gain Note 1. 60 90 − dB
Unity Gain Bandwidth
C
COMP
= 0.01 F
− 400 − kHz
PSRR @ 1.0 kHz
− − 70 − dB
COMP Max Voltage V
FB
= 0.8 V, COMP Open 4.1 4.4 − V
COMP Min Voltage V
FB
= 1.5 V, COMP Open − 0.1 0.2 V
Hiccup Latch Discharge Current − 4.0 7.5 13 A
Hiccup Latch Charge/Discharge
Ratio
− − 4.0 − −
PWM Comparators
Minimum Pulse Width CS1 = CS2 = CS
REF
− 235 280 ns
Channel Start−Up Offset
CS1 = CS2 = V
FB
= CS
REF
= 0 V;
Measure COMP when GHx switch High
0.45 0.60 0.80 V
Overcurrent Shutdown Timer
Overcurrent Shutdown Voltage
Threshold
− 2.8 3.0 3.2 V
C
OVC
Low Output Voltage − − 250 400 mV
C
OVC
Source Current − 3.0 5.0 8.0 A
1. Guaranteed by design. Not tested in production.
2. The V
FB
Bias Current changes with the value of R
OSC
per Figure 5.
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NCP5331FTR2

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Manufacturer:
ON Semiconductor
Description:
IC REG CTRLR AMD 2OUT 32LQFP
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