MTFDJAA400MBS-1AN1ZABYY Datasheet MTFDJAA400MBS-1AN1ZABYY, MTFDJAA800MBS-1AN16ABYY, MTFDJAA800MBS-1AN1ZABYY | P22-P24

Data Retention

As a NAND Flash device ages with use, its capability to retain a programmed value is

affected by the number of PROGRAM and ERASE operations to its cells, causing deterio-

ration. When new, the device has a powered-off data retention capability of several

years, but with use, data retention is reduced.

Temperature also affects how long the device retains its programmed value when power

is removed. High temperature reduces retention capability when power is off, but is not

an issue when power is applied. The SSD drive contains firmware and hardware fea-

tures that can monitor and refresh memory cells when power is applied.

Table 26: Data Retention and Drive Writes per-Day

Density

Typical Data Retention

with Power Removed (Months)

Drive Writes per-Day

(DWPD)

400GB 3 10

800GB 3 10

Note:

1. Typical data retention with power removed, at 40 °C and up to 90% of write endurance.

Endurance

Endurance rating is the expected amount of host data that can be written by product

when subjected to a specified workload at a specified operating and storage tempera-

ture over the specified product life. For the specific workload to achieve this level of en-

durance, refer to JEDEC specification JESD218. TBW is defined as 1 x 10

bytes.

Table 27: Endurance

Density Endurance Rating Unit Notes

400GB 7000 TBW 1, 2

800GB 14,000

Notes:

1. Limited warranty with media usage provides coverage either for the warranty period or

until the SSD percentage used endurance indicator reaches 100, whichever comes first.

2. TBW per the JEDEC JESDS218 specification assuming typical workloads are 50% sequen-

tial and 50% random and consist of the following: 5% are 4KB; 5% are 8KB; 10% are

16KB; 10% are 32KB; 35% are 64KB; and 35% are 128KB.

Preliminary

S600DC Series 1.8-Inch SAS NAND Flash SSD

Reliability

PDF: 09005aef86470b9b

s600dc_series_1_8_sas_ssd.pdf - Rev. F 3/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Electrical Characteristics

Device DC power (+3.3V and +5V) is through the standard SAS interface. Typical power

measurements listed below are based on an average of drives tested, under nominal

conditions, using the listed input voltage at 60°C internal temperature. Measurements

are made at 12Gb interface speeds.

• Startup power: Measured from power-on to when the drive reaches operating condi-

tion and can process media access commands.

• Peak operating mode power: Measured by testing the drive in various read and write

access patterns that simulate worst case power consumption.

• Idle mode power: Measured when the drive is powered up and ready for media access

commands, but before the host has sent the commands.

Note: Stresses greater than those listed in the following tables may cause permanent

damage to the device. These are stress ratings only and device operation above ratings

or conditions listed in the operation sections of this specification is not implied. Expo-

sure to absolute maximum rating conditions for extended periods may affect reliability.

Preliminary

S600DC Series 1.8-Inch SAS NAND Flash SSD

Electrical Characteristics

PDF: 09005aef86470b9b

s600dc_series_1_8_sas_ssd.pdf - Rev. F 3/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Power Consumption

Specifications

Table 28: Power Consumption Specifications

Device

and

Capacity

Start Current

Average Idle

Power (W)

Average Power

Under Workload (W)

Configurable Power

Limit Settings+5A +3.3A

Power

(W)

Sequential

Read

Sequential

Write

S650DC

400GB 0.65 1.07 6.99 2.58 4.60 6.52 6, 7, 8, 9, 10, 11

800GB 0.62 1.10 9.35 3.11 5.39 8.98 6, 7, 8, 9, 10, 11

Notes:

1. Measured with average reading DC ammeter. Instantaneous +12V current peaks will ex-

ceed these values. Power supply at nominal voltage. Number of drives tested = 6 at 60

°C internal.

2. Sequential READ and WRITE operations are based on 128K block transfer at queue

depth = 32.

Identifier and Supported Settings

Supported power consumption identifier settings are shown in the table below. An IN-

QUIRY SCSI command or MODE SENSE command can be used to query VPD page

0x8D for supported power levels and associated identifiers.

The MODE SENSE and SELECT commands can be used to read, write, and modify the

mode page 0x1A, subpage 1. When the SELECT command is used to write a new identi-

fier value, the value is saved in nonvolatile memory, unchanged until modified.

Table 29: Power Consumption Identifier and Supported Settings

Note applies to entire table.

Device and

Capacity

Mode Page

Unit

0x0

(Default) 0x1 0x2 0x3 0x4 0x5 0x6

S655DC

200GB 11 10 9 8 7 6 N/A W

400GB 11 10 9 8 7 6 N/A

Note:

1. Device settings can be configured by modifying VPD mode page 0x1A, subpage 0x1.

Power

Table 30: Power Specifications

Parameter/Condition V

(Margin) Min Max Unit

Voltage input – Start up 5 (±10%) 4.5 5.5 V

Voltage input – Steady state 5 (±5%) 4.75 5.25

Voltage input 3.3 (±5%) 3.13 3.46

Preliminary

S600DC Series 1.8-Inch SAS NAND Flash SSD

Electrical Characteristics

PDF: 09005aef86470b9b

s600dc_series_1_8_sas_ssd.pdf - Rev. F 3/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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