NCP6132A, NCP6132B
http://onsemi.com
10
Table 5. ELECTRICAL CHARACTERISTICS Unless otherwise stated: −10°C < T
A
< 100°C; V
CC
= 5.0 V; C
VCC
= 0.1 mF
Parameter UnitsMaxTypMinTest Conditions
VRDY, VRDYA (Power Good) OUTPUT
Rise Time
External pull−up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 10% to 90%
− 100 ns
Fall Time
External pull−up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 90% to 10%
10 ns
Output Voltage at Power−up
VRDY, VRDYA pulled up to 5 V via 2 kW
− − 1.0 V
Output Leakage Current When High VRDY & VRDYA = 5.0 V −1.0 − 1.0
mA
VRDY Delay (rising) DAC = TARGET to VRDY 500
ms
VRDY Delay (falling) From OCP or OVP − 5 −
ms
PWM, PWMA OUTPUTS
Output High Voltage
Sourcing 500 mA
V
CC
–
1.0 V
− − V
Output Mid Voltage No Load, SetPS = 02 1.3 2.0 2.7 V
Output Low Voltage
Sinking 500 mA
− − 0.7 V
Rise and Fall Time
CL (PCB) = 50 pF, DVo = GND to VCC
− 10 ns
Tri−State Output Leakage Gx = 2.0 V, x = 1−4, EN = Low −1.0 − 1.0
mA
PHASE DETECTION
CSP1A, CSP2A, CSP2, CSP3
Pin Threshold Voltage
4.2 V
SCLK, SDIO
V
IL
Input Low Voltage 0.45 V
V
IH
Input High Voltage 0.65 V
V
HYS
Hysteresis Voltage 50 mV
V
OH
Output High Voltage 1.05 V
V
OL
Output Low Voltage (SDIO only) TBD mV
R
ON
Buffer On Resistance
(data line, ALERT#, and VRHOT#)
4 13
W
Leakage Current −100 100
mA
Pad Capacitance (Note 3) 4.0 pF
VR clock to data delay (Tco) (Note 3) 4 8.3 ns
Setup time (Tsu) (Note 3) 7 ns
Hold time (Thld) (Note 3) 14 ns
HIGH−SIDE MOSFET DRIVER
Pull−up Resistance, Sourcing Current (Note 4) BST = PVCC 1.2 2.0
W
High Side Driver Sourcing Current BST = PVCC 4.17 A
Pull−down Resistance, Sinking Current
(Note 4)
BST = PVCC 0.8 2.0
W
High Side Driver Sinking Current BST = PVCC 6.25 A
HG1, HG2, HGA Rise Time V
CC
= 5 V, 3 nF load, BST − SW = 5 V 6 16 30 ns
HG1, HG2, HGA Fall Time V
CC
= 5 V, 3 nF load, BST − SW = 5 V 6 11 30 ns
HG1, HG2, HGA Turn−On Propagation Delay
tpdh
DRVH
C
LOAD
= 3 nF 16 40 47 ns
SW1, SW2, SWA Pull−Down Resistance SW to PGND 2
kW
3. Guaranteed by design/characterization, not in production test
4. Guaranteed by characterization
