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NCP6132AMNR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P31
NCP6132A, NCP6132B
http://onsemi.com
7
Table 5. ELECTRICAL CHARACTERISTICS Unless otherwise stated: −10°C < T
A
< 100°C; V
CC
= 5.0 V; C
VCC
= 0.1 mF
Parameter Test Conditions Min Typ Max Units
CURRENT SUMMING AMPLIFIER
Offset Voltage (Vos) −300 300
mV
Input Bias Current (CSSUM) CSSUM = CSREF = 1 V −7.5 7.5 nA
Open Loop Gain 80 dB
Current Sense Unity Gain Bandwidth C
L
= 20 pF to GND,
R
L
= 10 kW to GND
10 MHz
Maximum CSCOMP (A) Output Voltage I
source
= 2 mA 3.5 − − V
Minimum CSCOMP(A) Output Voltage
I
sink
= 500 mA
− − 0.1 V
CURRENT BALANCE AMPLIFIER
Input Bias Current CSPx = CSREF = 1.2 V −50 − 50 nA
Common Mode Input Voltage Range CSPx = CSREF 0 − 2.0 V
Differential Mode Input Voltage Range CSREF = 1.2 V −100 − 100 mV
Input Offset Voltage Matching CSPx = CSREF = 1.2 V,
Measured from the average
−1.5 − 1.5 mV
Current Sense Amplifier Gain 0 V < CSPx − CSREF < 0.1 V,
−10°C ~ 85°C
−10°C ~ 100°C
5.7
5.5
6.0
6.0
6.3
6.3
V/V
Multiphase Current Sense Gain Matching CSREF = CSP = 10 mV to 30 mV −3 3 %
−3 dB Bandwidth 8 MHz
BIAS SUPPLY
V
CC
Quiescent Current EN = high 20 27 35 mA
EN = low 10 70
mA
UVLO Threshold V
CC
rising 4.5 V
V
CC
falling 4.0 V
VCC UVLO Hysteresis 200 mV
VDDBP Quiescent Current EN = Low
EN = High
0.8
12.0
mA
DAC SLEW RATE
Soft Start Slew Rate 2.33
mv/ms
Slew Rate Slow 3.5
mv/ms
Slew Rate Fast 13.5
mv/ms
AUX Soft Start Slew Rate 2.33
mv/ms
AUX Slew Rate Slow 3.5
mv/ms
AUX Slew Rate Fast 13.5
mv/ms
ENABLE INPUT
Enable High Input Leakage Current External 1k pull−up to 3.3 V − 1.0
mA
Upper Threshold V
UPPER
0.8 V
Lower Threshold V
LOWER
0.35 V
Total Hysteresis V
UPPER
– V
LOWER
95 mV
Enable Delay Time Measure time from Enable transitioning HI
to when DRON goes high, V
boot
is not 0 V
5.0 ms
3. Guaranteed by design/characterization, not in production test
4. Guaranteed by characterization
NCP6132A, NCP6132B
http://onsemi.com
8
Table 5. ELECTRICAL CHARACTERISTICS Unless otherwise stated: −10°C < T
A
< 100°C; V
CC
= 5.0 V; C
VCC
= 0.1 mF
Parameter UnitsMaxTypMinTest Conditions
DRVEN
Output High Voltage
Sourcing 500 mA
3.5 V
Output Low Voltage
Sinking 500 mA
0.1 V
Rise Time
CL (PCB) = 20 pF,
DVo = 10% to 90%
− 255 − ns
Fall Time − 2 − ns
Internal Pull Down Resistance EN = Low 70
kW
IOUT / IOUTA OUTPUT
Maximum Output Voltage R
lim
= 5k 2.5 V
Input Referred Offset Voltage I
limit
to CSREF −2.5 2.5 mV
Output Source Current
I
limit
sink current = 80 mA
840
mA
Current Gain (IOUT
CURRENT
) / (ILIM
CURRENT
), R
ILIM
=
R
OUT
= 8.0 kW , Temp range: 0°C to 60°C
9.5 10 10.5
OSCILLATOR
Switching Frequency Range 200 − 800 kHz
Switching Frequency Accuracy 200 kHz < F
sw
< 800 kHz −10 − 10 %
3 Phase Operation
R
osc
= 67.4 kW
360 400 440 kHz
Rosc Output Voltage
R
osc
= 67.4 kW
1.95 2.00 2.05 V
OUTPUT OVER VOLTAGE & UNDER VOLTAGE PROTECTION (OVP & UVP)
Over Voltage Threshold During Soft−Start &
DVID
1.7 1.75 1.8 V
Over Voltage Threshold Above DAC VSP(A) Rising 225 250 275 mV
Over Voltage Delay VSP(A) rising to PWMx low 50 ns
Under Voltage Threshold Below DAC−DROOP VSP(A) Falling 350 400 450 mV
Under−voltage Hysteresis VSP(A) Rising 25 mV
Under−voltage Delay 5
ms
VR12 DAC
System Voltage Accuracy −105C ~ 855C
1.0 V ≤ DAC < 1.52 V
0.8 V< DAC < 0.995 V
0.5 V < DAC < 0.795 V
0.25 V < DAC < 0.495 V
−105C ~ 1005C
1.0 V ≤ DAC < 1.52 V
0.8 V< DAC < 0.995 V
0.5 V < DAC < 0.795 V
0.25 V < DAC < 0.495 V
−0.5
−5
−8
−8
1
−12
−12
−12
+0.5
+5
+8
+8
1
+12
+12
+12
%
mV
mV
mV
%
mV
mV
mV
Droop Feed−Forward Current Measure on DROOP pin 60 66 72
mA
Droop Feed−Forward Pulse On−Time 0.16
ms
OVERCURRENT PROTECTION
ILIM Threshold Current
(OCP shutdown after 50 ms delay)
Aux/Core Multiphase, PS0, R
lim
= 20 kW
9.0 10 11.0
mA
Aux/Core 1−phase, PS1/2/3, R
lim
= 20 kW
10
mA
Aux 2−phase, PS1, R
lim
= 20 kW
10
mA
Core 2−phase, PS1, R
lim
= 20 kW
6.5
mA
Aux/Core 2−phase, PS2/3, R
lim
= 20 kW
6.5
mA
Core 3−phase, PS1/2/3, R
lim
= 20 kW
4.0
mA
3. Guaranteed by design/characterization, not in production test
4. Guaranteed by characterization
NCP6132A, NCP6132B
http://onsemi.com
9
Table 5. ELECTRICAL CHARACTERISTICS Unless otherwise stated: −10°C < T
A
< 100°C; V
CC
= 5.0 V; C
VCC
= 0.1 mF
Parameter UnitsMaxTypMinTest Conditions
OVERCURRENT PROTECTION
ILIM Threshold Current
(immediate OCP shutdown)
Aux/Core Multiphase, PS0, R
lim
= 20 kW
13.5 15 16.5
mA
Aux/Core 1−phase, PS1/2/3, R
lim
= 20 kW
15
mA
Aux 2−phase, PS1, R
lim
= 20 kW
15
mA
Core 2−phase, PS1, R
lim
= 20 kW
10
mA
Aux/Core 2−phase, PS2/3, R
lim
= 20 kW
10
mA
Core 3−phase, PS1/2/3, R
lim
= 20 kW
6
mA
MODULATORS (PWM COMPARATORS) FOR CORE & AUX
Minimum Pulse Width F
sw
= 350 kHz 60 ns
0% Duty Cycle COMP voltage when the PWM outputs
remain LO
1.3 − V
100% Duty Cycle COMP voltage when the PWM outputs
remain HI V
RMP
= 12.0 V
− 2.5 − V
PWM Ramp Duty Cycle Matching COMP = 2 V, PWM Ton matching −20 20 %
PWM Phase Angle Error Between adjacent phases −25 25 deg
Ramp Feed−forward Voltage range 5 22 V
TRBST#
TRBST/COMP offset TRBST Starts Sinking Current 350 mV
TRBST Sink Capability 500
mA
TRBSTA#
TRBSTA/COMPA offset TRBSTA Starts Sinking Current 350 mV
TRBSTA Sink Capability 500
mA
VRHOT#
Output Low Voltage I_VRHOT = −4 mA 0.3 V
Output Leakage Current High Impedance State −1.0 − 1.0
mA
TSNS/TSNSA
Alert# Assert Threshold 515 mV
Alert# De−assert Threshold 533 mV
VRHOT# Assert Threshold 496 mV
VRHOT# Rising Threshold 515 mV
TSNS Bias Current 115 120 125
mA
ADC
Voltage Range 0 2 V
Total Unadjusted Error (TUE) −1 +1 %
Differential Nonlinearity (DNL) 8−bit 1 LSB
Power Supply Sensitivity +/−1 %
Conversion Time 30
ms
Round Robin 90
ms
VRDY, VRDYA (Power Good) OUTPUT
Output Low Saturation Voltage I
VRDY(A)
= 4 mA − − 0.3 V
3. Guaranteed by design/characterization, not in production test
4. Guaranteed by characterization
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P31

NCP6132AMNR2G

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Buy NCP6132AMNR2G
Manufacturer:
ON Semiconductor
Description:
Switching Controllers 3 + 2 CONTROLLER
Lifecycle:
New from this manufacturer.
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