MAX6872/MAX6873
EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
_______________________________________________________________________________________ 7
OUTPUT VOLTAGE HIGH vs. SOURCE CURRENT
(PUSH-PULL OUTPUT)
MAX6872/73 toc10
I
OUT
(mA)
V
OH
(V)
555040 4510 15 20 25 30 355
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
060
PUSH-PULL TO IN3
IN3 = 5V
PO5–PO8 (MAX6872)
PO3–PO5 (MAX6873)
OUTPUT VOLTAGE HIGH vs. SOURCE CURRENT
(CHARGE-PUMP OUTPUT)
MAX6872/73 toc11
I
OUT
(
µ
A)
V
OH
(V)
4321
3.5
4.0
4.5
5.0
5.5
6.0
3.0
05
MEASURED RELATIVE TO V
ABP
PO1–PO4 (MAX6872)
PO1–PO2 (MAX6873)
MR TO PO_ PROPAGATION DELAY
vs. TEMPERATURE
MAX6872/73 toc12
TEMPERATURE (
°
C)
MR TO PO_ PROPAGATION DELAY (µs)
6035-15 10
1.55
1.60
1.65
1.70
1.80
1.75
1.85
1.90
1.50
-40 85
MAXIMUM MR TRANSIENT DURATION
vs. MR THRESHOLD OVERDRIVE
MAX6872/73 toc13
MR THRESHOLD OVERDRIVE (mV)
MAXIMUM MR TRANSIENT DURATION (µs)
10010
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1 1000
PO_ ASSERTION OCCURS
ABOVE THIS LINE
OUTPUT VOLTAGE HIGH vs. SOURCE CURRENT
(WEAK PULLUP OUTPUT)
MAX6872/73 toc09
I
OUT
(mA)
V
OH
(V)
4.54.03.0 3.51.0 1.5 2.0 2.50.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
05.0
WEAK PULLUP
TO ABP
Typical Operating Characteristics (continued)
(V
IN1
= +6.5V to +13.2V, V
IN2
= +10V, V
IN3
–V
IN6
= +2.7V to +5.5V, GPI_ = GND, MARGIN = MR = DBP, T
A
= +25°C, unless other-
wise noted.)
FET (IRF7811W)
TURN-ON WITH CHARGE PUMP
MAX6872/73 toc14
10ms/div
V
PO1
10V/div
V
SOURCE
2V/div
I
DRAIN
5A/div
SEE FIGURE 9
MAX6872/MAX6873
EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
8 _______________________________________________________________________________________
Pin Description
PIN
MAX6872
MAX6873
NAME FUNCTION
1 3 PO2
Programmable Output 2. Configurable, active-high, active-low, open-drain, weak pullup, or
charge-pump output. PO2 pulls low with a 10µA internal current sink for 1V < V
ABP
<
V
UVLO
. PO2 assumes its programmed conditional output state when ABP exceeds UVLO.
2 5 PO3
Programmable Output 3. Configurable, active-high, active-low, open-drain, weak pullup
(MAX6872), push-pull (MAX6873), or charge-pump (MAX6872) output. PO3 pulls low with
a 10µA internal current sink for 1V < V
ABP
< V
UVLO
. PO3 assumes its programmed
conditional output state when ABP exceeds UVLO.
3 6 PO4
Programmable Output 4. Configurable, active-high, active-low, open-drain, weak pullup
(MAX6872), push-pull (MAX6873), or charge-pump (MAX6872) output. PO4 pulls low with
a 10µA internal current sink for 1V < V
ABP
< V
UVLO
. PO4 assumes its programmed
conditional output state when ABP exceeds UVLO.
4 4 GND Ground
5 7 PO5
Programmable Output 5. Configurable, active-high, active-low, open-drain, weak pullup, or
push-pull output. PO5 pulls low with a 10µA internal current sink for 1V < V
ABP
< V
UVLO
.
PO5 assumes its programmed conditional output state when ABP exceeds UVLO.
6 PO6
Programmable Output 6. Configurable, active-high, active-low, open-drain, weak pullup, or
push-pull output. PO6 pulls low with a 10µA internal current sink for 1V < V
ABP
< V
UVLO
.
PO6 assumes its programmed conditional output state when ABP exceeds UVLO.
7 PO7
Programmable Output 7. Configurable, active-high, active-low, open-drain, weak pullup, or
push-pull output. PO7 pulls low with a 10µA internal current sink for 1V < V
ABP
< V
UVLO
.
PO7 assumes its programmed conditional output state when ABP exceeds UVLO.
8 PO8
Programmable Output 8. Configurable, active-high, active-low, open-drain, weak pullup, or
push-pull output. PO8 pulls low with a 10µA internal current sink for 1V < V
ABP
< V
UVLO
.
PO8 assumes its programmed conditional output state when ABP exceeds UVLO.
9, 10, 23,
24
1, 8, 9, 10,
23–26, 32
N.C. No Connection. Not internally connected.
11 11
MARGIN
Margin Input. Configure MARGIN to either assert PO_ into a programmed state or to hold
PO_ in its existing state when driving MARGIN low (see Table 7). Leave MARGIN
unconnected or connect to DBP if unused. MARGIN overrides MR if both assert at the
same time. MARGIN is internally pulled up to DBP through a 10µA current source.
12 12 MR
Manual Reset Input. Configure MR to either assert PO_ into a programmed state or to have
no effect on PO_ when driving MR low (see Table 6). Leave MR unconnected or connect
to DBP if unused. MR is internally pulled up to DBP through a 10µA current source.
13 13 SDA Serial Data Input/Output (Open-Drain). SDA requires an external pullup resistor.
14 14 SCL Serial Clock Input. SCL requires an external pullup resistor.
15 15 A0
Address Input 0. Address inputs allow up to four MAX6872/MAX6873 connections on one
common bus. Connect A0 to GND or to the serial interface power supply.
16 16 A1
Address Input 1. Address inputs allow up to four MAX6872/MAX6873 connections on one
common bus. Connect A1 to GND or to the serial interface power supply.
MAX6872/MAX6873
EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
_______________________________________________________________________________________ 9
Pin Description (continued)
PIN
MAX6872
MAX6873
NAME FUNCTION
17 17 GPI4
General-Purpose Logic Input 4. An internal 10µA current source pulls GPI4 to GND.
Configure GPI4 to control watchdog timer functions or the programmable outputs.
18 18 GPI3
General-Purpose Logic Input 3. An internal 10µA current source pulls GPI3 to GND.
Configure GPI3 to control watchdog timer functions or the programmable outputs.
19 19 GPI2
General-Purpose Logic Input 2. An internal 10µA current source pulls GPI2 to GND.
Configure GPI2 to control watchdog timer functions or the programmable outputs.
20 20 GPI1
General-Purpose Logic Input 1. An internal 10µA current source pulls GPI1 to GND.
Configure GPI1 to control watchdog timer functions or the programmable outputs.
21 21 ABP
Internal Power-Supply Output. Bypass ABP to GND with a 1µF ceramic capacitor. ABP
powers the internal circuitry of the MAX6872/MAX6873. ABP supplies the input voltage to
the internal charge pumps when the programmable outputs are configured as charge-
pump outputs. Do not use ABP to supply power to external circuitry.
22 22 DBP
Internal Digital Power-Supply Output. Bypass DBP to GND with a 1µF ceramic capacitor.
DBP supplies power to the EEPROM memory and the internal logic circuitry. Do not use
DBP to supply power to external circuitry.
25 IN6
Voltage Input 6. Configure IN6 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN6 to GND with a 0.1µF capacitor installed as close to the device as possible.
26 IN5
Voltage Input 5. Configure IN5 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN5 to GND with a 0.1µF capacitor installed as close to the device as possible.
27 27 IN4
Voltage Input 4. Configure IN4 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN4 to GND with a 0.1µF capacitor installed as close to the device as possible.
28 28 IN3
Voltage Input 3. Configure IN3 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN3 to GND with a 0.1µF capacitor installed as close to the device as possible.
29 29 IN2
Bipolar Voltage Input 2. Configure IN2 to detect negative voltage thresholds from -2.5V to
-15.25V in 50mV increments or -1.25V to -7.625V in 25mV increments. Alternatively,
configure IN2 to detect positive voltage thresholds from 2.5V to 15.25V in 50mV
increments or 1.25V to 7.625V in 25mV increments. For improved noise immunity, bypass
IN2 to GND with a 0.1µF capacitor installed as close to the device as possible.
30 30 IN1
High-Voltage Input 1. Configure IN1 to detect voltage thresholds from 2.5V to 13.2V in
50mV increments or 1.25V to 7.625V in 25mV increments. For improved noise immunity,
bypass IN1 to GND with a 0.1µF capacitor installed as close to the device as possible.
31 31 I.C. Internal Connection. Leave unconnected.
32 2 PO1
Programmable Output 1. Configurable active-high, active-low, open-drain, weak pullup, or
charge-pump output. PO1 pulls low with a weak 10µA internal current sink for 1V < V
ABP
<
V
UVLO
. PO1 assumes its programmed conditional output state when ABP exceeds UVLO.
EP Exposed Paddle. Exposed paddle is internally connected to GND.

MAX6873ETJ+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits EEPROM-Prog Quad Power-Sup Sequencer
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet