R8C/3MQ Group 5. Electrical Characteristics
R01DS0044EJ0200 Rev.2.00 Page 28 of 47
Jun 29, 2012
Notes:
1. V
CC = 1.8 to 3.6 V and Topr = 20°C to 85°C, unless otherwise specified.
2. The average output current indicates the average value of current measured during 100 ms.
Table 5.2 Recommended Operating Conditions (1)
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
VCC Digital supply
voltage
(1) During MCU operation under the
conditions other than (2) and (3)
below.
1.8 3.3 3.6 V
(2) During programming and erasing of
the flash memory using a serial
programmer or parallel programmer.
2.7 3.6
(3) During on-chip debugging with the
E8a emulator connected
2.7 3.6
VCCRF Analog supply voltage 1.8 3.3 3.6 V
VSS/
VSS2/
VSSRF/
VSSRF1/
VSSRF2/
DIEGND
Supply voltage VSS1, VSS2, VSSRF, VSSRF1,
VSSRF2, DIEGND
—0—V
V
IH Input “H” voltage Other than CMOS input 0.8 VCC —VCC V
CMOS
input
Input level
switching
function
(I/O port)
Input level selection:
0.35 V
CC
2.7 V VCC 3.6 V 0.55 VCC —VCC V
1.8 V V
CC < 2.7 V 0.65 VCC —VCC V
Input level selection:
0.5 V
CC
2.7 V VCC 3.6 V 0.7 VCC —VCC V
1.8 V V
CC < 2.7 V 0.8 VCC —VCC V
Input level selection:
0.7 V
CC
2.7 V VCC 3.6 V 0.85 VCC —VCC V
1.8 V V
CC < 2.7 V 0.85 VCC —VCC V
V
IL Input “L” voltage Other than CMOS input 0 0.2 VCC V
CMOS
input
Input level
switching
function
(I/O port)
Input level selection:
0.35 V
CC
2.7 V VCC 3.6 V 0 0.2 VCC V
1.8 V V
CC < 2.7 V 0 0.2 VCC V
Input level selection:
0.5 V
CC
2.7 V VCC 3.6 V 0 0.3 VCC V
1.8 V V
CC < 2.7 V 0 0.2 VCC V
Input level selection:
0.7 V
CC
2.7 V VCC 3.6 V 0 0.45 VCC V
1.8 V V
CC < 2.7 V 0 0.35 VCC V
I
OH(sum) Peak sum output “H”
current
Sum of all pins IOH(peak) ——160 mA
I
OH(sum) Average sum output “H”
current
Sum of all pins IOH(avg) ——80 mA
I
OH(peak) Peak output “H” current Drive capacity Low 10 mA
Drive capacity High 40 mA
I
OH(avg) Average output “H”
current
Drive capacity Low 5mA
Drive capacity High 20 mA
I
OL(sum) Peak sum output “L”
current
Sum of all pins IOL(peak) 160 mA
I
OL(sum) Average sum output “L”
current
Sum of all pins IOL(avg) ——80mA
I
OL(peak) Peak output “L” current Drive capacity Low 10 mA
Drive capacity High 40 mA
I
OL(avg) Average output “L”
current
Drive capacity Low 5 mA
Drive capacity High 20 mA
f
(XIN) XIN clock input oscillation frequency 1.8 V VCC 3.6 V 16 MHz
f
(XCIN) XCIN clock input oscillation frequency 1.8 V VCC 3.6 V 30 32.768 35 kHz
System clock frequency f(XIN)=16 MHz 1.8 V V
CC 3.6 V 16 MHz
f
(BCLK) CPU clock frequency f(XIN)=16 MHz 2.7 V VCC 3.6 V 16 MHz
2.15 V V
CC < 2.7 V 8
1.8 V V
CC < 2.15 V 4
R8C/3MQ Group 5. Electrical Characteristics
R01DS0044EJ0200 Rev.2.00 Page 29 of 47
Jun 29, 2012
Figure 5.1 Ports P0, P1, P3 and P4 Timing Measurement Circuit
P0
P1
P3
P4
30 pF
R8C/3MQ Group 5. Electrical Characteristics
R01DS0044EJ0200 Rev.2.00 Page 30 of 47
Jun 29, 2012
Notes:
1. V
CC = 2.7 to 3.6 V and Topr = 0 to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one. However, the same address must not be programmed more than once
per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed.)
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.3 Flash Memory (Program ROM) Electrical Characteristics
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
Program/erase endurance
(2)
1,000
(3)
——times
Byte program time 80 500
µs
Block erase time 0.3 s
t
d(SR-SUS) Time delay from suspend request until
suspend
5 + CPU clock
× 3 cycles
ms
Interval from erase start/restart until
following suspend request
0—
µs
Time from suspend until erase restart 30 + CPU clock
× 1 cycle
µs
td
(CMDRST-
READY)
Time from when command is forcibly
stopped until reading is enabled
30 + CPU clock
× 1 cycle
µs
Program, erase voltage CPU rewrite mode 1.8 3.6 V
Standard serial I/O mode 2.7 3.6
Parallel I/O mode 2.7 3.6
Read voltage 1.8 3.6 V
Program, erase temperature 0 60
°C
Data hold time
(7)
Ambient temperature = 55°C 20 year

R5F213MCQNNP#U0

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
16-bit Microcontrollers - MCU R8CMQ 128+4+7.5KB -20~85C 40WQFN RF4CE
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New from this manufacturer.
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