R8C/3MQ Group 5. Electrical Characteristics
R01DS0044EJ0200 Rev.2.00 Page 31 of 47
Jun 29, 2012
Notes:
1. V
CC = 1.8 to 3.6 V and Topr = −20°C to 85°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one. However, the same address must not be programmed more than once
per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed.)
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.4 Flash Memory (Data flash Block A to Block D) Electrical Characteristics
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
—
Program/erase endurance
(2)
10,000
(3)
——times
— Byte program time
(program/erase endurance
≤ 1,000 times)
— 160 1500
µs
— Byte program time
(program/erase endurance
> 1,000 times)
— 300 1500
µs
— Block erase time
(program/erase endurance
≤ 1,000 times)
—0.2 1 s
— Block erase time
(program/erase endurance
> 1,000 times)
—0.3 1 s
t
d(SR-SUS) Time delay from suspend request until
suspend
— — 5 + CPU clock
× 3 cycles
ms
— Interval from erase start/restart until
following suspend request
0— —
µs
— Time from suspend until erase restart — — 30 + CPU clock
× 1 cycle
µs
td
(CMDRST-
READY)
Time from when command is forcibly
stopped until reading is enabled
— — 30 + CPU clock
× 1 cycle
µs
— Program, erase voltage CPU rewrite mode 1.8 — 3.6 V
Standard serial I/O mode 2.7 — 3.6
Parallel I/O mode 2.7 — 3.6
— Read voltage 1.8 — 3.6 V
— Program, erase temperature CPU rewrite mode
−20 — 85 °C
Standard serial I/O mode 0 — 60
Parallel I/O mode 0 — 60
—
Data hold time
(7)
Ambient temperature = 55°C 20 — — year
