R8C/3MQ Group 5. Electrical Characteristics
R01DS0044EJ0200 Rev.2.00 Page 43 of 47
Jun 29, 2012
Note:
1. 1.8 V
≤ VCC < 2.7 V, Topr = −20°C to 85°C, and f(XIN) = 16 MHz, unless otherwise specified.
Table 5.18 Electrical Characteristics (3) [1.8 V ≤ VCC < 2.7 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage P0_4, P1, P3_0,
P3_1, P3_3 to P3_5,
P3_7, P4_3 to P4_5
Drive capacity High IOH = −2 mA VCC − 0.5 — VCC V
Drive capacity Low I
OH = −1 mA VCC − 0.5 — VCC V
VOL Output “L” voltage P0_4, P1, P3_0,
P3_1, P3_3 to P3_5,
P3_7, P4_3 to P4_5
Drive capacity High IOL = 2 mA — — 0.5 V
Drive capacity Low I
OL = 1 mA — — 0.5 V
VT+-VT- Hysteresis
INT0
, INT1, INT3, KI0,
KI1
, KI2, KI3, KI4,
KI6
, KI7, TRAIO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
RXD0, CLK0, SSI,
SCL, SDA, SSO
VCC = 2.15 V 0.05 0.20 — V
RESET
VCC = 2.15 V 0.05 0.20 — V
I
IH Input “H” current VI = 2.15 V, VCC = 2.15 V — — 4.0 µA
I
IL Input “L” current VI = 0 V, VCC = 2.15 V — — −4.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 2.15 V 70 140 300 kΩ
RfXIN Feedback resistance XIN — 0.3 — MΩ
RfXCIN Feedback resistance XCIN — 8 — MΩ
VRAM RAM hold voltage During stop mode 1.8 — 3.6 V