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PWR_ON
tpwrhold
tpwrlow
CARD_SEL
SET
RESET
tpwrpre
tpwrset
tpwrp
NOTE: tpwrset: This delay is necessary to latch–up the PWR_ON condition
and does not represent the CRD_VCC output voltage rise time.
tpwrlow: This delay includes the internal ISO7816−3 power down
sequence to make sure the DC/DC converter is fully deactivated.
Figure 13. Power On Sequence Timings
CS
PWR_ON
tpgmdly
CARD_SEL
tcseldly
tpwrw
Programming
Chip Selected
tpwrhold
NOTE: tpwrw: This delay represents the minimum pulse width needed
to write the PWR_ON status into the associated DC/DC latch
Figure 14. Power On and CARD_SEL Sequence Timings
Sequence
CS
PGM
DC/DC CONVERTER
The power conversion is carried out either in step up or
step down mode. The operation is fully automatic and,
beside the output voltage programming, does not need any
further adjustments.
The simplified DC/DC converter, given in Figure 15, is
based on a full bridge structure capable to handle either step
up or step down power supply using an external inductor.
This structure brings the capability to operate from a wide
range of input voltage, while providing the accurate 1.80 V,
3.0 V or 5.0 V requested by the smart cards. Beside the
accuracy, the major aim of this structure is the high
efficiency necessary to save energy taken from the battery.
On the other hand, using two independent converters
provides a high flexibility and prevent a total system crash
in the event of a failure on one of the card connected to the
interface.
OPERATION
NOTE: Described operation makes reference to
CARD_A and can be applied to CARD_B.
The system operates with a two cycles concept:
1. Cycle 1: Q15 and Q4 are switched ON and the
inductor L1 is charged by the energy supplied by
the external battery. During this phase, the pairs
Q1/Q16 and Q2/Q3 are switched OFF.
The current flowing into the two MOSFET Q1 and
Q4 is internally monitored and will be switched OFF
when the Ipeak value (depending upon the
programmed output voltage value) is reached. At
this point, Cycle 1 is completed and Cycle 2 takes
place. The ON time is a function of the battery
voltage and the value of the inductor network (L and
Zr) connected across pins 26/27 and 34/35.
A 4 ms time out structure makes sure the system does
run in a continuous Cycle 1 loop.
2. Cycle 2: Q1 and Q16 are switched ON and the
energy stored into the inductor L1 is dumped into
the external load through Q16. During this phase,
the pair Q15/Q4 and the pair Q2/Q3 are switched
OFF.
The current flow period is constant (900 ns typical)
and Cycle 1 repeats after this time if the CRD_VCC
voltage is below the specified value.
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When the output voltage reaches the specified value
(1.80 V or 3.0 V or 5.0 V), Q1 and Q16 are switched
OFF immediately to avoid over voltage on the output
load. In the mean time, the two extra NMOS Q2 and
Q3 are switched ON to fully discharge any current
stored into the inductor, avoiding ringing and
voltage spikes over the system. Figure 16 illustrates
the theoretical basic waveforms present in the
DC/DC converter.
The control block gives the logic states according to the
bits provided by the external mP. These controls bits are
applied to the selected DC/DC converter to generate the
programmed output voltage. The MOS drive block includes
the biases necessaries to drive the NMOS and PMOS
devices as depicted in the block diagram given Figure 15.
U1
R2
R3
R4
Vref
LOGIC CONTROL # A
V0
PWR_ON
Overload
VCC_OK
Voltage Regulation
GND
Vcc
Vref_1.8/3/5 V
PGM
CARD_SEL
A0
A1
A2
DC/DC MULTIPLEXED CONTROLS
PWR_ON
A3
Q1
Q4
Q15
Q16
L1
C1
Vcc
PWR_GND
CRD_VCC_A
GND
GND
MIXED LOGIC / ANALOG BLOCK
G_Q1
G_Q2
G_Q3
G_Q4
G_HIZ
GND
G_Q7
Q3
Q2
Q5
V1
Vout
R1
Q7
Q6
5.0 V
5.0 V
GND
Figure 15. Basic DC/DC Converter Diagram
CS
10 mF
C2
GND
10 mF
GND
22 mH
29
27 26
25
28
U2
R6
R7
R8
Vref
LOGIC CONTROL # A
V0
PWR_ON
Overload
VCC_OK
Voltage Regulation
GND
Vcc
Vref_1.8/3/5 V
Q8
Q11
Q17
Q18
L2
C3
Vcc
PWR_GND
CRD_VCC
GND
GND
MIXED LOGIC / ANALOG BLOCK
G_Q1
G_Q2
G_Q3
G_Q4
G_HIZ
GND
G_Q7
Q10
Q9
Q12
V1
Vout
R5
Q14
Q13
3.0 V
5.0 V
GND
10 mF
C4
GND
10 mF
GND
22 mH
32
34 35
36
33
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Since the output inductor L1 and the reservoir capacitor
C1 carry relative high peak current, low ESR devices must
be used to prevent the system from poor output voltage
ripple and low efficiency. Using ceramic capacitors, X5R or
X7R type, are recommended, splitting the 10 mF in two
separate parts when there is a relative long distance between
the CRD_VCC_x output pin and the card VCC input. On the
other hand, the inductor shall have an ESR below 1.0 W to
achieve the high efficiency over the full temperature range.
However, inductor with 2.0 W ESR can be used when a slight
decrease of the efficiency is acceptable at system level.
Ton Toff
CRD_VCC Charged
Charge CRD_VCC Next CRD_VCC Charge
Q1 / Q4
Q2 / Q3
IL
(Time is not to scale)
CRD_VCC
CRD_VCC Voltage Regulated
Ipeak
Vripple
Q5/Q6
Figure 16. Theoretical DC/DC Operating
When the CRD_VCC is programmed to zero volt, or when
the card is extracted from the socket, the active pull down Q5
rapidly discharges the output reservoir capacitor, making
sure the output voltage is below 0.40 V when the card slides
across the contacts.
Based on the experiments carried out during the
NCN6004A characterization, the best comprise, at time of
printing this document, is to use two
4.7 mF/10 V/ceramic/X7R capacitor in parallel to achieve
the CRD_VCC filtering. The ESR will not extend 50 mW
over the temperature range and the combination of standard
parts provide an acceptable –20% to +20% tolerance,
together with a low cost. Table 6 shows a quick comparison
between the most common type of capacitors. Obviously,
the capacitor must be SMD type to achieve the extremely
low ESR and ESL necessary for this application.
Figure 17 illustrates the CRD_VCC ripple observed in the
NCN6004A demo board running with X7R ceramic
capacitors.
Table 6. Ceramic/Electrolytic Capacitors Comparison
Manufacturer Type/Series Format Max Value Tolerance Typ. Z @ 500 kHz
MURATA CERAMIC/GRM225 0805
10 mF/6.3 V
−20% /+20%
30 mW
MURATA CERAMIC/GRM225 0805
4.7 mF/6.3 V
−20% /+20%
30 mW
VISHAY Tantalum/594C/593C 1206
10 mF/16 V 450 mW
VISHAY Electrolytic/94SV 1812
10 mF/10 V
−20%/+20%
400 mW
Miscellaneous Electrolytic Low Cost 1812
10 mF/10 V
−35%/+50%
2.0 W

NCN6004AFTBR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
I/O Controller Interface IC 2.7V POS/ATM Smart
Lifecycle:
New from this manufacturer.
Delivery:
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