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IS61NVF51236-7.5B3-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P35
10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. E
10/25/2013
IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
INTERLEAVED BURST ADDRESS TABLE (MODE = Vdd orNC)
External Address 1st Burst Address 2nd Burst Address 3rd Burst Address
A1 A0 A1 A0 A1 A0 A1 A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
WRITE TRUTH TABLE (x72)
Operation WE BWa BWb BWc BWd BWe BWf BWg BWh
READ H X X X X X X X X
WRITEBYTEa L L H H H H H H H
WRITEBYTEb L H L H H H H H H
WRITEBYTEc L H H L H H H H H
WRITEBYTEd L H H H L H H H H
WRITEBYTEe L H H H H L H H H
WRITEBYTEf L H H H H H L H H
WRITEBYTEg L H H H H H H L H
WRITEBYTEh L H H H H H H H L
WRITEALLBYTEs L L L L L L L L L
WRITEABORT/NOP L H H H H H H H H
Notes:
1. Xmeans"Don'tCare".
2. AllinputsinthistablemustbeetsetupandholdtimearoundtherisingedgeofCLK.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11
Rev. E
10/25/2013
IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
LINEAR BURST ADDRESS TABLE (MODE = VSS)
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
TSTG StorageTemperature –65to+150 °C
Pd PowerDissipation 1.6 W
IouT Output Current (per I/O) 100 mA
VIn, VouT VoltageRelativetoVSSforI/OPins –0.5toVddq + 0.5 V
VIn VoltageRelativetoVSSfor –0.5to4.6 V
for Address and Control Inputs
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2.Thisdevicecontainscircuitytoprotecttheinputsagainstdamageduetohighstaticvoltagesorelectricelds;however,precau-
tions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3.ThisdevicecontainscircuitrythatwillensuretheoutputdevicesareinHigh-Zatpowerup.
12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. E
10/25/2013
IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
6.5 7.5
MAX MAX
Symbol Parameter Test Conditions
Temp. range x18 x36 x72 x18 x36 x72 Uni
t
Icc ACOperating DeviceSelected, Com. 450 450 600 425 425 550 mA
Supply Current OE = VIh, ZZ ≤ VIl, Ind. 500 500 650 475 475 600
All Inputs ≤ 0.2V or ≥ Vdd – 0.2V,
CycleTime≥ tkc min.
ISb Standby Current Device Deselected, com. 150 150 150 150 150 150 mA
TTLInput Vdd = Max., Ind. 150 150 150 150 150 150
All Inputs ≤ VIl or ≥ VIh,
ZZ ≤ VIl, f = Max.
ISbI Standby Current Device Deselected, Com. 110 110 110 110 110 110 mA
cmoS Input Vdd = Max., Ind. 125 125 125 125 125 125
 VIn
≤
VSS +0.2Vor≥Vdd –0.2V
f = 0
ISb2 SleepMode ZZ>VIh Com. 60 60 60 60 60 60 mA
Ind. 75 75 75 75 75 75
Note:
1. MODEpinhasaninternalpullupandshouldbetiedtoV
ddorVSS.Itexhibits±100µAmaximumleakagecurrentwhentiedto≤
V
SS+0.2Vor≥Vdd–0.2V.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
3.3V 2.5V
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
Voh OutputHIGHVoltage Ioh = –4.0mA (3.3V) 2.4 — 2.0 — V
Ioh = –1.0mA (2.5V)
Vol OutputLOWVoltage Iol = 8.0mA (3.3V) — 0.4 — 0.4 V
Iol = 1.0 mA (2.5V)
VIh
(1)
InputHIGHVoltage 2.0 Vdd + 0.3 1.7 Vdd + 0.3 V
VIl
(1)
InputLOWVoltage
–0.3 0.8 –0.3 0.7 V
IlI InputLeakageCurrent VSS ≤ VIn ≤ Vdd
(2)
–5 5 –5 5 µA
Ilo OutputLeakageCurrent
VSS ≤ VouT ≤ Vddq, OE = VIh –5 5 –5 5 µA
Note:
1.Overshoot:V
Ih(AC)<Vdd+2.0V(Pulsewidthlessthantkc/2).Undershoot:VIl(AC)>-2V(Pulsewidthlessthantkc/2).
2. MODEpinhasaninternalpullupandshouldbetiedtoV
ddorVSS.Itexhibits±100µAmaximumleakagecurrentwhentiedto≤
V
SS+0.2Vor≥Vdd–0.2V.
OPERATING RANGE (IS61NVFx)
Range Ambient Temperature VDD VDDq
Commercial 0°Cto+70°C 2.5V±5% 2.5V±5%
Industrial -40°Cto+85°C 2.5V±5% 2.5V±5%
OPERATING RANGE (IS61NLFx)
Range Ambient Temperature VDD VDDq
Commercial 0°Cto+70°C 3.3V±5% 3.3V/2.5V±5%
Industrial -40°Cto+85°C 3.3V±5% 3.3V/2.5V±5%
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P35

IS61NVF51236-7.5B3-TR

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Buy IS61NVF51236-7.5B3-TR
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Description:
IC SRAM 18M PARALLEL 165TFBGA
Lifecycle:
New from this manufacturer.
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