TJA1082 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 28 November 2012 33 of 38
NXP Semiconductors
TJA1082
FlexRay node transceiver
14. Appendix
14.1 EPL 3.0.1 requirements implemented in the TJA1082
Table 15. EPL 3.0.1 requirements implemented
EPL 3.0.1 parameter Description
- wake-up via dedicated data frames
dBusTxDif difference between rise and fall times: 3ns
R
DCLoad
transmitter output voltage defined for DC bus load of 40 to 55 /100 pF
- transmission not allowed to start with DATA_1
dBDTx10, dBDTx01 transmitter delay: 75 ns
dBDTxia, dBDTxai transmitter idle-to-active/active-to-idle transition delay: 75 ns
dBDTxDM transmitter idle-to-active delay mismatch: 50 ns
uData0_LP receiver thresholds for detecting DATA_0 in low-power modes: 400 mV (min)/
100 mV (max)
dBDRxai idle reaction time: 50 ns to 275 ns
dBDActivityDetection activity detection time 100 ns to 250 ns
dBDRxia activity reaction time: 100 ns to 325 ns
uData1 uData0 receiver threshold mismatch: 30 mV
dBDRx10, dBDRx01 receiver delay: 75 ns
dBusRx0BD, dBusRx1BD minimum bit time: 70 ns
C_StarTxD, C_BDTxD maximum input capacitance on pin TXD: 10 pF
dBDRxD
R15
+ dBDRxD
F15
sum of RXD rise and fall times (20 %/80 %): 13 ns with a 15 pF load
dBDTxRxai idle loop delay: 325 ns
dStarTxActiveMax TXEN timeout: 650 s to 2600 s
- BD_Off mode defined (TJA1082 Power-off mode)
dBDModeChange Reaction time to mode change request 100 s (max)
- Short circuit currents:
iBP
BMShortMax
,iBM
BPShortMax
BP shorted to BM: < 60 mA; no time limit
iBP
GNDShortMax
,iBM
GNDShortMax
BP/BM shorted to ground: < 60 mA; no time limit
iBP
-5ShortMax
,iBM
-5ShortMax
BP/BM shorted to 5 V: < 60 mA; no time limit
iBP
BAT48ShortMax
,iBM
BAT27ShortMax
BP/BM shorted to 27 V: < 60 mA; no time limit
iBP
BAT48ShortMax
,iBM
BAT27ShortMax
BP/BM shorted to 48 V: < 72 mA; no time limit
iBP
BAT60ShortMax
,iBM
BAT60ShortMax
BP/BM shorted to 60 V: < 90 mA; for 400 ms (max)
- ERRN output signals errors including wake-up status and wake-up source
iBP
LeakGND
, IBM
LeakGND
leakage current on BP/BM in case of loss of GND 1600 A (max)
uBDUVV
CC
V
CC
undervoltage detection threshold: > 4 V
uUV
IO
V
IO
undervoltage detection threshold: > 2 V; detection timeout 1000 ms (max)
dBDRV
CC
, dBDRV
IO
, dStarRV
BAT
V
CC
/V
IO
/V
BAT
undervoltage recovery time: 10 ms (max)
- Qualification according to AEC-Q100 temperature classes
uESDExt 6 kV ESD (min) on pins BP and BM according to HBM (100 pF/1500 )
uESDInt 2 kV ESD (min) on all other pins according to HBM (100 pF/1500 )
uESDIEC 6 kV ESD (min) on pins BP and BM according to IEC 61000-4-2
