PROGRAMMABLE CLOCK GENERATOR 10 MARCH 3, 2017
5P49V5907 DATASHEET
Table 7: Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the 5P49V5907. These ratings, which are standard
values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods can affect product reliability. Electrical parameters are guaranteed only over the
recommended operating temperature range.
Table 8: Recommended Operation Conditions
Table 9: Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down
Resistance
(T
A
= +25 °C)
Item Rating
Supply Voltage, V
DDA
, V
DDO
3.465V
Inputs
XIN/REF 0V to 1.2V voltage swing
Outputs, V
DDO
(LVCMOS) -0.5V to VDDO+ 0.5V
Outputs, I
O
(SDA) 10mA
Package Thermal Impedance,
Θ
JA
42°C/W (0 mps)
Package Thermal Impedance,
Θ
JC
41.8°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
ESD Human Body Model 2000V
Junction Temperature 125°C
Symbol Parameter Min Typ Max Unit
V
DDx
Power supply voltage for supporting 1.8V outputs 1.71 1.8 1.89 V
V
DDA
Analog power supply voltage. Use filtered analog power
supply if available.
1.71 1.89 V
T
A
Operating temperature, ambient -40 85 °C
C
LOAD_OUT
Maximum load capacitance (3.3V LVCMOS only) 15 pF
F
IN
External reference crystal 8 40 MHz
t
PU
Power up time for all VDDs to reach minimum specified
voltage (power ramps must be monotonic)
0.05 5 ms
Symbol Parameter Min Typ Max Unit
CIN
Input Capacitance (SD/OE, SEL1/SDA, SEL0/SCL)
37pF
Pull-down Resistor 100 300 k
ROUT
LVCMOS Output Driver Impedance (VDDO = 1.8V, 2.5V, 3.3V)
17
XIN / RE F
Programmable capacitance at XIN/REF
925pF
XO UT
Programmable capacitance at XOUT
925pF
MARCH 3, 2017 11 PROGRAMMABLE CLOCK GENERATOR
5P49V5907 DATASHEET
Table 10: Crystal Characteristics
Note: Typical crystal used is FOX 603-25-150. For different reference crystal options please go to www.foxonline.com.
Table 11: DC Electrical Characteristics
Output Features and Descriptions
OUT1/OUT1B, OUT2/OUT2B, and OUT4/OUT4B can form three output pairs. Each output pair has individually programmable
frequencies and can be configured as one differential pair (LVDS, LVPECL, regular HCSL) or two LVCMOS outputs. VDDO is
individually selectable from 1.8V to 3.3V for LVDS and LVCMOS, and 2.5V to 3.3V for LVPECL and regular current-mode HCSL
outputs. OUT3, 5-7 are four Low-Power HCSL(LP-HCSL) differential output pairs. They are the same frequency which can be
individually programmed. They utilize the 1.8V LP-HCSL technology which can reduce supply current and termination resistor
count. LP-HCSL outputs are from 1MHz to 200MHz and other differential outputs are from 1MHz to 350MHz.
Parameter Test Conditions Minimum Typical Maximum Units
Mode of Oscillation
Frequency 8 25 40 MHz
Equivalent Series Resistance (ESR) 10 100
Shunt Capacitance 7pF
Load Capacitance (CL) @ <=25 MHz 6 8 12 pF
Load Capacitance (CL) >25M to 40M 6 8 pF
Maximum Crystal Drive Level 100 µW
Fundamental
Symbol Parameter Test Conditions Min Typ Max Unit
Iddcore
3
Core Supply Current
100 MHz on all outputs, 25 MHz
REFCLK
43 mA
LVPECL, 350 MHz, 3.3V VDDOx 42 47 mA
LVPECL, 350 MHz, 2.5V VDDOx 37 42 mA
LVDS, 350 MHz, 3.3V VDDOx 18 21 mA
LVDS, 350 MHz, 2.5V VDDOx 17 20 mA
LVDS, 350 MHz, 1.8V VDDOx 16 19 mA
HCSL, 250 MHz, 3.3V VDDOx, 2 pF load 29 33 mA
HCSL, 250 MHz, 2.5V VDDOx, 2 pF load 28 33 mA
LVCMOS, 50 MHz, 3.3V, VDDOx
1,2
16 18 mA
LVCMOS, 50 MHz, 2.5V, VDDOx
1,2
14 16 mA
LVCMOS, 50 MHz, 1.8V, VDDOx
1,2
12 14 mA
LVCMOS, 200 MHz, 3.3V VDDOx
1
36 42 mA
LVCMOS, 200 MHz, 2.5V VDDOx
1,2
27 32 mA
LVCMOS, 200 MHz, 1.8V VDDOx
1,2
16 19 mA
Iddpd Power Down Current SD asserted, I2C Programming 10 14 mA
1. Single CMOS driver active.
2. Measured into a 5” 50 Ohm trace with 2 pF load.
3. Iddcore = IddA+ IddD, no loads.
Iddox Output Buffer Supply Current
PROGRAMMABLE CLOCK GENERATOR 12 MARCH 3, 2017
5P49V5907 DATASHEET
Table 12: DC Electrical Characteristics for 3.3V LVCMOS (V
DDO
= 3.3V±5%, TA = -40°C to +85°C)
1
1. See “Recommended Operating Conditions” table.
Table 13: DC Electrical Characteristics for 2.5V LVCMOS (V
DDO
= 2.5V±5%, TA = -40°C to +85°C)
Table 14: DC Electrical Characteristics for 1.8V LVCMOS
(V
DDO
= 1.8V±5%, TA = -40°C to +85°C)
Symbol Parameter Test Conditions Min Typ Max Unit
VOH Output HIGH Voltage
IOH = -15mA
2.4 VDDO V
VOL Output LOW Voltage
IOL = 15mA
0.4 V
IOZDD Output Leakage Current (OUT1,2,4)
Tri-state outputs, VDDO = 3.465V
A
IOZDD Output Leakage Current (OUT0)
Tri-state outputs, VDDO = 3.465V
30 µA
VIH Input HIGH Voltage
Single-ended inputs - SD/OE
0.7xVDDD VDDD + 0.3 V
VIL Input LOW Voltage
Single-ended inputs - SD/OE
GND - 0.3 0.3xVDDD V
VIH Input HIGH Voltage
Single-ended input OUT0_SEL_I2CB
2VDDO0 + 0.3V
VIL Input LOW Voltage
Single-ended input OUT0_SEL_I2CB
GND - 0.3 0.4 V
VIH Input HIGH Voltage
Single-ended input - XIN/REF
0.8 1.2 V
VIL Input LOW Voltage
Single-ended input - XIN/REF
GND - 0.3 0.4 V
T
R
/T
F
Input Rise/Fall Time
SD/OE, SEL1/SDA, SEL0/SCL
300 ns
Symbol Parameter Test Conditions Min Typ Max Unit
VOH Output HIGH Voltage
IOH = -12mA
0.7xVDDO V
VOL Output LOW Voltage
IOL = 12mA
0.4 V
IOZDD Output Leakage Current (OUT1,2,4)
Tri-state outputs, VDDO = 2.625V
A
IOZDD Output Leakage Current (OUT0)
Tri-state outputs, VDDO = 2.625V
30 µA
VIH Input HIGH Voltage
Single-ended inputs - SD/OE
0.7xVDDD VDDD + 0.3 V
VIL Input LOW Voltage
Single-ended inputs - SD/OE
GND - 0.3 0.3xVDDD V
VIH Input HIGH Voltage
Single-ended input OUT0_SEL_I2CB
1.7 VDDO0 + 0.3 V
VIL Input LOW Voltage
Single-ended input OUT0_SEL_I2CB
GND - 0.3 0.4 V
VIH Input HIGH Voltage
Single-ended input - XIN/REF
0.8 1.2 V
VIL Input LOW Voltage
Single-ended input - XIN/REF
GND - 0.3 0.4 V
T
R
/T
F
Input Rise/Fall Time
SD/OE, SEL1/SDA, SEL0/SCL
300 ns
Symbol Parameter Test Conditions Min Typ Max Unit
V
OH
Output HIGH Voltage
IOH = -8mA
0.7 xV
DDO
V
DDO
V
V
OL
Output LOW Voltage
IOL = 8mA
0.25 x V
DDO
V
Output Leakage Current (OUT1,2,4)
Tri-state outputs, VDDO = 3.465V
5
Output Leakage Current (OUT0)
Tri-state outputs, VDDO = 3.465V
30
V
IH
Input HIGH Voltage
Single-ended inputs - SD/OE
0.7 * V
DDD
V
DDD
+ 0.3 V
V
IL
Input LOW Voltage
Single-ended inputs - SD/OE
GND - 0.3 0.3 * V
DDD
V
V
IH
Input HIGH Voltage
Single-ended input OUT0_SEL_I2CB
0.65 * V
DDO
0V
DDO
0 + 0.3 V
V
IL
Input LOW Voltage
Single-ended input OUT0_SEL_I2CB
GND - 0.3 0.4 V
V
IH
Input HIGH Voltage
Single-ended input - XIN/REF
0.8 1.2 V
V
IL
Input LOW Voltage
Single-ended input - XIN/REF
GND - 0.3 0.4 V
T
R
/T
F
Input Rise/Fall Time
SEL0/SCL
300 ns
I
OZDD
µA

5P49V5907B000NDGI

Mfr. #:
Manufacturer:
IDT
Description:
Clock Generators & Support Products XTAL 1 LVCMOS PCIe 4 Out 7 Diff 3 Pairs
Lifecycle:
New from this manufacturer.
Delivery:
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